Plasma CVD apparatus

Claim 1

A plasma CVD apparatus comprising a vacuum chamber for forming and for etching a deposition film containing silicon on a cylindrical substrate to be treated, a gas introducing means for introducing a fluorine compound gas and a gas for forming a deposition film into the vacuum chamber, a gas discharging means for discharging the gases in the vacuum chamber, a leaking means for returning pressure in the vacuum chamber to atmospheric pressure, a high frequency-introducing means for introducing to the vacuum chamber high frequency energy for generating a plasma atmosphere of the fluorine compound gas for etching and for generating a plasma atmosphere of the gas for forming the deposition film, a high frequency power source for supplying the high frequency energy to the high frequency introducing means, a supporting means for supporting the cylindrical substrate to be treated, and a heating means for heating from the inside the cylindrical substrate to be treated, wherein the surface of the walls of the vacuum chamber and the high frequency-introducing means to be exposed to the plasma atmospheres are aluminum.