Abstract A semiconductor photoelectric conversion device comprises a first non-single crystal semiconductor layer of a first conductivity type. A second non-single crystal semiconductor layer of substantially an intrinsic conductivity type is formed on the first semiconductor layer; the second layer comprises a first crystallized region and a second crystallized region. The second crystallized region has a similar crystalline structure as that of the first semiconductor layer and extends from the first semiconductor layer toward the first crystallized region where the degree of crystallization of the first crystallized region is less than that of the second crystallized region. A third non-single crystal semiconductor layer of a second semiconductor type opposite to said first conductivity type is formed on the intrinsic layer.
A semiconductor photoelectric conversion device comprising: a first non-single crystal semiconductor layer of a first conductivity type; a second non-single crystal semiconductor layer of substantially an intrinsic conductivity type formed on said first semiconductor layer, said second layer comprising a first crystallized region and a second crystallized region, said second crystallized region having a similar crystalline structure as that of said first semiconductor layer and extending from said first semiconductor layer toward the first crystallized region where the degree of crystallization of said first crystallized region is less than that of said second crystallized region; a third non-single crystal semiconductor layer of a second semiconductor type opposite to said first conductivity type formed on said intrinsic semiconductor layer; and a pair of electrodes formed on outer surfaces of said first and third semiconductor layers.
Claim 2
Dependent Claim
134 words
A semiconductor photoelectric conversion device comprising: a first non-single crystal semiconductor layer of a first conductivity type; a second non-single crystal semiconductor layer of substantially an intrinsic conductivity type formed on said first semiconductor layer, said second layer comprising a first crystallized region and a second crystallized region, said second crystallized region having a similar crystalline structure as that of said first semiconductor layer and extending from said first semiconductor layer toward the first crystallized region where the degree of crystallization of said first crystallized region is less than that of said second crystallized region; a third non-single crystal semiconductor layer of a second semiconductor type opposite to said first conductivity type formed on said intrinsic semiconductor layer; and a pair of electrodes formed on outer surfaces of said first and third semiconductor layers.
Claim 3
Dependent Claim
27 words
A semiconductor photoelectric conversion device according to claim 1 wherein the crystallized semiconductor in the second crystallized region is grown in a plurality of different columnar forms.