Patent US1942998A successfully refreshed from Google Patents.
Patent US4704367A successfully refreshed from Google Patents.
US4704367A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Suppression of hillock growth through multiple thermal cycles by argon implantation
Assignee: Motorola Solutions Inc
•
Filing: 1986-04-21
•
Granted: 1987-11-03
•
Expires: 2006-04-21
Abstract
Abstract A technique for suppressing hillock growth in metal films on integrated circuits through multiple thermal cycles by argon implantation. Although it was known that ion implantation of many species such as arsenic suppressed the growth of hillocks in metal films through one thermal cycle, it was discovered that only one of the proposed ions, argon, would suppress hillock formation for multiple subsequent thermal cycles. For the other species, hillock formation would reoccur after multiple cycles. This characteristic is important for double layer metal (DLM) processes to prevent interlayer shorting.
Inventors
- 👤 John R. Alvis
- 👤 Orin W. Holland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:44
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/30; Y; Y10; Y10S; Y10S148/00; Y10S148/14; Y10S438/00; Y10S438/937
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
70 words
In the manufacture of an integrated circuit on a semiconductor substrate, a process for suppressing the growth of hillocks in a metal film for multiple thermal cycles comprising the steps of: forming a metal film on the semiconductor substrate during the fabrication of an integrated circuit; distributing argon ions into the metal film; and processing the metal film through subsequent integrated circuit fabrication steps involving at least two thermal cycles.
Claim 2
Dependent Claim
70 words
In the manufacture of an integrated circuit on a semiconductor substrate, a process for suppressing the growth of hillocks in a metal film for multiple thermal cycles comprising the steps of: forming a metal film on the semiconductor substrate during the fabrication of an integrated circuit; distributing argon ions into the metal film; and processing the metal film through subsequent integrated circuit fabrication steps involving at least two thermal cycles.
Claim 3
Dependent Claim
21 words
The process of claim 1 in which the metal film is selected from the group consisting of aluminum and aluminum alloy.
Claim 4
Dependent Claim
15 words
The process of claim 1 in which the argon ions are distributed by ion implantation.
Claim 5
Dependent Claim
55 words
The process of claim 1 in which the metal film described therein is one of a plurality of metal films, and the subsequent integrated circuit fabrication steps involve forming a dielectric layer over the metal film and a subsequent metal film over the dielectric layer and in which subsequent fabrication steps require multiple thermal cycles.
Claim 6
Dependent Claim
23 words
The process of claim 3 in which the ion implantation dose of the argon is between 0.5 and 2×10 15 cm -2 .
Claim 7
Dependent Claim
23 words
The process of claim 5 in which the ion implantation dose of the argon is between 1 and 2×10 15 cm -2 .
Claim 8
Dependent Claim
85 words
In the manufacture of an integrated circuit on a semiconductor substrate, a process for suppressing the growth of hillocks in a metal film for multiple thermal cycle comprising the steps of: forming a metal film on the semiconductor substrate during the fabrication of an integrated circuit; implanting argon ions into the metal film at a dose in the range between about 0.5 and 5×10 15 cm -2 ; and processing the metal film through subsequent integrated circuit fabrication steps involving at least two thermal cycles.
Claim 9
Dependent Claim
85 words
In the manufacture of an integrated circuit on a semiconductor substrate, a process for suppressing the growth of hillocks in a metal film for multiple thermal cycle comprising the steps of: forming a metal film on the semiconductor substrate during the fabrication of an integrated circuit; implanting argon ions into the metal film at a dose in the range between about 0.5 and 5×10 15 cm -2 ; and processing the metal film through subsequent integrated circuit fabrication steps involving at least two thermal cycles.
Claim 10
Dependent Claim
21 words
The process of claim 7 in which the metal film is selected from the group consisting of aluminum and aluminum alloy.
Claim 11
Dependent Claim
23 words
The process of claim 7 in which the ion implantation dose of the argon is between 1 and 2×10 15 cm -2 .
Claim 12
Dependent Claim
55 words
The process of claim 7 in which the metal film described therein is one of a plurality of metal films, and the subsequent integrated circuit fabrication steps involve forming a dielectric layer over the metal film and a subsequent metal film over the dielectric layer and in which subsequent fabrication steps require multiple thermal cycles.
References Cited (Backward Citations)
US4520554A
Cited
US4536223A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-02 | 1991-05-04 | 1991-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-02 | 1995-05-04 | 1995-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-02 | 1999-05-04 | 1999-11-03 | $7700.00 | Window Closed / Lapsed |