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Patent US4701394A successfully refreshed from Google Patents.
US4701394A
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Image forming member for elecrophotography
Assignee: Canon Inc
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Filing: 1986-10-24
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Granted: 1987-10-20
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Expires: 2006-10-24
Abstract
Abstract An image-forming member for electrophotography comprises a photoconductive layer including as constituting layers, a hydrogenated amorphous silicon layer and an amorphous inorganic semiconductor layer. The amorphous inorganic semiconductor layer is laminated on the hydrogenated amorphous silicon layer to thereby provide a heterojunction.
Inventors
- 👤 Eiichi Inoue
- 👤 Isamu Shimizu
- 👤 Toshiyuki Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:30
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/043; G03G5/0433; G03G5/0436
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
89 words
An image-forming member for electrophotography comprising a substrate, a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen and an amorphous inorganic semiconductor layer composed of an amorphous inorganic semiconductor having band gap ε g larger than band gap E g of said hydrogenated amorphous silicon and having effective dark resistance for forming electrophotographic images; said hydrogenated amorphous silicon layer being laminated to said amorphous inorganic semiconductor layer whereby a heterojunction is provided in the contact portion between the former layer and the latter layer.
Claim 2
Dependent Claim
89 words
An image-forming member for electrophotography comprising a substrate, a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen and an amorphous inorganic semiconductor layer composed of an amorphous inorganic semiconductor having band gap ε g larger than band gap E g of said hydrogenated amorphous silicon and having effective dark resistance for forming electrophotographic images; said hydrogenated amorphous silicon layer being laminated to said amorphous inorganic semiconductor layer whereby a heterojunction is provided in the contact portion between the former layer and the latter layer.
Claim 3
Dependent Claim
25 words
An image-forming member for electrophotography according to claim 1, in which said inorganic semiconductor layer is hydrogenated amorphous silicon layer containing either oxygen or carbon.
Claim 4
Dependent Claim
22 words
An image-forming member for electrophotography according to claim 1, in which said hydrogenated amorphous silicon layer is doped with a p-type impurity.
Claim 5
Dependent Claim
22 words
An image-forming member for electrophotography according to claim 1, in which said hydrogenated amorphous silicon layer is doped with a n-type impurity.
Claim 6
Dependent Claim
33 words
An image-forming member for electrophotography according to claim 1, in which said hydrogenated amorphous silicon layer is doped with an impurity in the range of 10 15 to 10 19 cm 3 .
Claim 7
Dependent Claim
59 words
An image-forming member for electrophotography comprising a substrate and a hydrogenated amorphous silicon layer containing from 1-40 atomic percent of hydrogen and having band gap E g and an amorphous inorganic semiconductor layer having band gap ε g larger than the band gap E g ; said hydrogenated amorphous silicon layer being laminated to said amorphous inorganic semiconductor layer.
Claim 8
Dependent Claim
59 words
An image-forming member for electrophotography comprising a substrate and a hydrogenated amorphous silicon layer containing from 1-40 atomic percent of hydrogen and having band gap E g and an amorphous inorganic semiconductor layer having band gap ε g larger than the band gap E g ; said hydrogenated amorphous silicon layer being laminated to said amorphous inorganic semiconductor layer.
Claim 9
Dependent Claim
30 words
An image-forming member for electrophotography according to claim 6, in which said amorphous inorganic semiconductor layer is of a p-type and said hydrogenated amorphous silicon layer is of an n-type.
Claim 10
Dependent Claim
30 words
An image-forming member for electrophotography according to claim 6, in which said amorphous inorganic semiconductor layer is of a n-type and said hydrogenated amorphous silicon layer is of an p-type.
Claim 11
Dependent Claim
22 words
An image-forming member for electrophotography according to claim 6, in which said amorphous inorganic semiconductor layer is composed of a chalcogen element.
Claim 12
Dependent Claim
22 words
An image-forming member for electrophotography according to claim 6, in which said amorphous inorganic semiconductor layer is composed of a chalcogen compound.
Claim 13
Dependent Claim
26 words
An image-forming member for electrophotography according to claim 6, in which said amorphous inorganic semiconductor layer is composed of silicon oxide of the formula: SiO.sub.x (0<x<2).
Claim 14
Dependent Claim
30 words
An image-forming member for electrophotography according to claim 6, in which said amorphous inorganic semiconductor layer is composed of hydrogenated amorphous silicon containing oxygen or carbon in a small amount.
Claim 15
Dependent Claim
27 words
An image-forming member for electrophotography according to claim 10 in which said chalcogen compound is composed of at least two members selected from Se, Te and S.
Claim 16
Dependent Claim
21 words
An image-forming member for electrophotography according to claim 10 in which said chalcogen compound contains a chalcogen element and another element.
Claim 17
Dependent Claim
19 words
An image-forming member for electrophotography according to claim 6 in which said band gap ε g is 2.1±0.4 eV.
Claim 18
Dependent Claim
21 words
An image-forming member for electrophotography according to claim 6 in which said hydrogenated amorphous silicon layer is 0.3-50 microns in thickness.
Claim 19
Dependent Claim
21 words
An image-forming member for electrophotography according to claim 6 in which said amorphous inorganic semiconductor layer is 0.1-70 microns in thickness.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-10-19 | 1991-04-20 | 1991-10-20 | $2000.00 | Window Closed / Lapsed |
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