US4701241A
Expired / Lapsed
US
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Method of making a resistor
Assignee: RCA Corp
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Filing: 1986-10-06
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Granted: 1987-10-20
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Expires: 2006-10-06
Abstract
Abstract A method of forming a resistor comprises forming a conducting layer on a substrate. An area of the layer is removed such as by etching. A resistor portion is formed in the area. The conducting layer including the resistor portion can be p-Si. The substrate can comprise an insulator such as Al 2 O 3 and a barrier layer can be formed on the substrate to achieve improved radiation hardening.
Inventors
- 👤 Kenneth M. Schlesier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 19:16
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
48 words
A method of forming a resistor on a substrate comprising: forming a conducting layer with a first thickness on said substrate; removing said layer from a selected area of said substrate; and forming a resistor portion in said area with a second thickness less than said first thickness.
Claim 2
Independent Claim
48 words
A method of forming a resistor on a substrate comprising: forming a conducting layer with a first thickness on said substrate; removing said layer from a selected area of said substrate; and forming a resistor portion in said area with a second thickness less than said first thickness.
Claim 3
Dependent Claim
18 words
The method of claim 1 further comprising forming a barrier layer between said substrate and said conducting layer.
Claim 4
Dependent Claim
12 words
The method of claim 2 wherein said barrier layer comprises silicon oxide.
Claim 5
Dependent Claim
23 words
The method of claim 2 wherein said barrier layer comprises a material having a larger bandgap than said conducting layer and said substrate.
Claim 6
Dependent Claim
17 words
The method of claim 2 wherein said barrier layer has a maximum thickness of about 300 nm.
Claim 7
Dependent Claim
16 words
The method of claim 5 wherein said barrier layer has a thickness of about 100 nm.
Claim 8
Dependent Claim
14 words
The method of claim 1 wherein said substrate comprises Al 2 O 3 .
Claim 9
Dependent Claim
10 words
The method of claim 1 wherein said substrate comprises Si.
Claim 10
Dependent Claim
11 words
The method of claim 1 wherein said conducting layer comprises p-Si.
Claim 11
Dependent Claim
22 words
The method of claim 1 wherein said forming steps each comprise depositing and doping said conducting layer and said resistor portion respectively.
Claim 12
Dependent Claim
41 words
The method of claim 10 wherein said conducting layer comprises conducting portions having a doping level of between about 10 20 and 10 21 cm -3 and said resistor portion has a doping level of about 10 19 cm -3 .
Claim 13
Dependent Claim
11 words
The method of claim 1 wherein said removing step comprises etching.
Claim 14
Dependent Claim
14 words
The method of claim 12 wherein said etching step comprises an isotropic plasma etching.
Claim 15
Dependent Claim
21 words
The method of claim 11 wherein said resistor forming step comprises depositing material for the resistor portion and etching said material.
Claim 16
Dependent Claim
23 words
The method of claim 1 wherein said first thickness is about 500 to 600 nm and said second thickness is about 75 nm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-19 | 1991-04-20 | 1991-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-19 | 1995-04-20 | 1995-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-19 | 1999-04-20 | 1999-10-20 | $7700.00 | Window Closed / Lapsed |