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US4700463A Expired / Lapsed US ⏱️ 0.0 years remaining

Non-crystalline semiconductor solar battery and method of manufacture thereof

Assignee: Fuji Electric Co Ltd
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Filing: 1986-09-04
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Granted: 1987-10-20
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Expires: 2006-09-04
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Abstract

Abstract The invention involves (1) forming a transparent conductive film on an insulating transparent substrate, with the transparent conductive film defining a first electrode, (2) forming a non-crystalline semiconductor film on the transparent conductive film, (3) detecting any pinholes existing in the non-crystalline semiconductor film, (4) applying a laser beam in a reducing atmosphere through the detected pinholes to portions of the transparent conductive film located at portions of the pinholes, such that the portions of the transparent conductive film located at positions at which the pinholes are present are caused to have a high resistance by reduction, and (5) finally forming a metal film on the non-crystalline semiconductor film to define a second electrode.

Inventors

  • 👤 Toshio Hama

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 22:44
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/134; H10F71/10; H10F71/103; H10F71/138; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S136/00; Y10S136/29

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 113 words
A method of manufacturing a non-crystalline semiconductor solar battery, comprising: (a) forming a transparent conductive film on an insulating transparent substrate, said transparent conductive film defining a first electrode; (b) forming a non-crystalline semiconductor film on said transparent conductive film; (c) detecting pinholes existing in said non-crystalline semiconductor film; (d) applying a laser beam in a reducing atmosphere through pinholes detected in step (c) to portions of said transparent conductive film located at positions of said pinholes such that said portions of said transparent conductive film are caused to have a high resistance by reduction, and (e) forming a metal film on said non-crystalline semiconductor film, said metal film defining a second electrode.
Claim 2
Independent Claim 113 words
A method of manufacturing a non-crystalline semiconductor solar battery, comprising: (a) forming a transparent conductive film on an insulating transparent substrate, said transparent conductive film defining a first electrode; (b) forming a non-crystalline semiconductor film on said transparent conductive film; (c) detecting pinholes existing in said non-crystalline semiconductor film; (d) applying a laser beam in a reducing atmosphere through pinholes detected in step (c) to portions of said transparent conductive film located at positions of said pinholes such that said portions of said transparent conductive film are caused to have a high resistance by reduction, and (e) forming a metal film on said non-crystalline semiconductor film, said metal film defining a second electrode.
Claim 3
Dependent Claim 20 words
The method as in claim 1, wherein said laser beam matches the light absorbance characteristics of said transparent conductive film.
Claim 4
Dependent Claim 62 words
The method as in claim 1, wherein step (c) comprises (i) applying monocromatic light to said non-crystalline semiconductor film such that said light passes through said non-crystalline semiconductor film, said transparent conductive film and said insulating transparent substrate, and (ii) measuring the intensity of said light after it has passed through said insulating transparent substrate to detect bright spots in said light.
Claim 5
Dependent Claim 47 words
The method as in claim 3, wherein step (c) further comprises employing a photosensor in close contact with a surface of said insulating transparent substrate to detect and measure said light after it has passed through said insulating transparent substrate to generate signals representing said bright spots.
Claim 6
Dependent Claim 23 words
The method as in claim 4, wherein step (d) comprises automatically applying said laser beam responsive to said signals generated by said photosensor.
Claim 7
Dependent Claim 15 words
The method as in claim 1, wherein said laser beam comprises a long wavelength beam.
Claim 8
Dependent Claim 15 words
The method as in claim 1, wherein said laser beam comprises a short wavelength beam.
Claim 9
Dependent Claim 35 words
The method as in claim 6, wherein said laser beam is generated by a laser comprising one of a ruby laser, a Nd:YAG laser, a He-Ne laser, a CO 2 laser, and a GaAlAs laser.
Claim 10
Dependent Claim 26 words
The method as in claim 7, wherein said laser beam is generated by a laser comprising one of an He-Cd laser and an N 2 laser.
Claim 11
Dependent Claim 16 words
The method as in claim 1, wherein said laser beam is applied in a hydrogen atmosphere.
Claim 12
Dependent Claim 18 words
The method as in claim 1, wherein step (c) is performed in an enclosure having a reduced pressure.
Claim 13
Independent Claim 214 words
A method of manufacturing a non-crystalline semiconductor solar battery, comprising: (a) forming a transparent conductive film on an insulating transparent glass substrate, said transparent conductive film defining a first electrode; (b) forming a non-crystalline semiconductor film on said transparent conductive film; (c) detecting pinholes existing in said non-crystalline semiconductive film by (i) applying monochromatic light to said non-crystalline semiconductive film such that said light passes through said non-crystalline semiconductive film, said transparent conductive film, and said insulating transparent substrate, and (ii) employing a photosensor disposed in close contact with a surface of said insulating transparent substrate to detect and measure said light after it has passed through said insulating transparent substrate and to generate signals representing bright spots in said light, (d) applying a laser beam in a reducing atmosphere comprising hydrogen through pinholes detected in step (c) to portions of said transparent conductive film located at positions of said pinholes such that said portions of said transparent conductive film are caused to have a high resistance by reduction, said laser beam matching the light absorbance characteristics of said transparent conductive film, said laser beam being automatically applied responsive to said signals generated by said photosensor, and (e) forming a metal film on said non-crystalline semiconductor film, said metal film comprising a second electrode.
Claim 14
Independent Claim 214 words
A method of manufacturing a non-crystalline semiconductor solar battery, comprising: (a) forming a transparent conductive film on an insulating transparent glass substrate, said transparent conductive film defining a first electrode; (b) forming a non-crystalline semiconductor film on said transparent conductive film; (c) detecting pinholes existing in said non-crystalline semiconductive film by (i) applying monochromatic light to said non-crystalline semiconductive film such that said light passes through said non-crystalline semiconductive film, said transparent conductive film, and said insulating transparent substrate, and (ii) employing a photosensor disposed in close contact with a surface of said insulating transparent substrate to detect and measure said light after it has passed through said insulating transparent substrate and to generate signals representing bright spots in said light, (d) applying a laser beam in a reducing atmosphere comprising hydrogen through pinholes detected in step (c) to portions of said transparent conductive film located at positions of said pinholes such that said portions of said transparent conductive film are caused to have a high resistance by reduction, said laser beam matching the light absorbance characteristics of said transparent conductive film, said laser beam being automatically applied responsive to said signals generated by said photosensor, and (e) forming a metal film on said non-crystalline semiconductor film, said metal film comprising a second electrode.

References Cited (Backward Citations)

JPS5935490A Cited
US4451970A Cited
JPS5986269A Cited
JPS59107579A Cited
JPS6085578A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-10-19 1991-04-20 1991-10-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-10-19 1995-04-20 1995-10-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-10-19 1999-04-20 1999-10-20 $7700.00 Window Closed / Lapsed

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