Method for forming electrical components comprising cured vinyl and/or acetylene terminated copolymers

Claim 1

A method of forming multilevel metallurgy on a substrate having a first conductor pattern on a surface thereof comprising: (a) coating said surface and said first conductor pattern with a composition containing a polymerizable oligomer selected from the group consisting of polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end-capped; (b) curing said composition to form a three-dimensional imidized layer thereof; (c) forming openings in said imidized layer extending to said first conductor pattern; and (d) forming a second conductive pattern over said imidized layer, and extending to said first conductor pattern.

Claim 2

A method of forming multilevel metallurgy on a substrate having a first conductor pattern on a surface thereof comprising: (a) coating said surface and said first conductor pattern with a composition containing a polymerizable oligomer selected from the group consisting of polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end-capped; (b) curing said composition to form a three-dimensional imidized layer thereof; (c) forming openings in said imidized layer extending to said first conductor pattern; and (d) forming a second conductive pattern over said imidized layer, and extending to said first conductor pattern.

Claim 23

A method for forming multilevel metallurgy on a substrate having a first conductor pattern on a surface thereof comprising: (a) coating said surface and said first conductor pattern with a composition comprising a copolymer of triethynyl benzene and a polymerizable oligomer selected from the group consisting of vinyl and/or acetylenic end-capped polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides and mixtures thereof; (b) curing said composition to form a three-dimensional imidized layer thereof; (c) forming openings in said imidized layer extending to said first conductor pattern; and (d) forming a second conductive pattern over said imidized layer, and extending to said first conductor pattern.

Claim 24

A method for forming multilevel metallurgy on a substrate having a first conductor pattern on a surface thereof comprising: (a) coating said surface and said first conductor pattern with a composition comprising a copolymer of triethynyl benzene and a polymerizable oligomer selected from the group consisting of vinyl and/or acetylenic end-capped polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides and mixtures thereof; (b) curing said composition to form a three-dimensional imidized layer thereof; (c) forming openings in said imidized layer extending to said first conductor pattern; and (d) forming a second conductive pattern over said imidized layer, and extending to said first conductor pattern.

Claim 25

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition comprising a copolymer of triethynylbenzene and a polymerizable oligomer selected from the group consisting of vinyl and/or acetylenic end-capped polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides and mixtures thereof; (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein.

Claim 26

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition comprising a copolymer of triethynylbenzene and a polymerizable oligomer selected from the group consisting of vinyl and/or acetylenic end-capped polyamic acids, the corresponding polyamic esters, the corresponding polyisoimides and mixtures thereof; (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein.

Claim 27

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition comprising a polymerizable oligomer selected from the group consisting of polyamic acids, polyamic esters, polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped; and (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein, wherein at least a portion of said curing is carried out under gaseous pressure in order to promote planarization of said composition.

Claim 28

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition comprising a polymerizable oligomer selected from the group consisting of polyamic acids, polyamic esters, polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped; and (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein, wherein at least a portion of said curing is carried out under gaseous pressure in order to promote planarization of said composition.

Claim 29

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition comprising a polymerization oligomer selected from the group consisting of polymeric acids, polyamic esters, polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped, and wherein the number average molecular weight of said polymerizable oligomers ranges from about 1,000 to about 25,000; and (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein.

Claim 30

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition comprising a polymerization oligomer selected from the group consisting of polymeric acids, polyamic esters, polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped, and wherein the number average molecular weight of said polymerizable oligomers ranges from about 1,000 to about 25,000; and (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein.

Claim 31

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; wherein said recessed trenches range in width from about 0.5 μm to about 2 μm and range in depth from about 5.5 μm to about 6 μm; (b) filling said trenches with a composition comprising a polymerizable oligomer selected from the group consisting of polyamic acids, polyamic esters, polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped; and (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein.

Claim 32

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; wherein said recessed trenches range in width from about 0.5 μm to about 2 μm and range in depth from about 5.5 μm to about 6 μm; (b) filling said trenches with a composition comprising a polymerizable oligomer selected from the group consisting of polyamic acids, polyamic esters, polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped; and (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein.

Claim 33

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions" (b) filling said trenches with a composition comprising a polymerizable oligomer selected from the group consisting of polyamic acids, polyamic esters, polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped; and (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein, accomplished using a combined dry/cure cycle wherein said cycle is initiated at about 85° C. and stepped to about 170° C., followed by about 200° C., followed by about 300° C. and a final curing step at about 400° C.

Claim 34

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions" (b) filling said trenches with a composition comprising a polymerizable oligomer selected from the group consisting of polyamic acids, polyamic esters, polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped; and (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein, accomplished using a combined dry/cure cycle wherein said cycle is initiated at about 85° C. and stepped to about 170° C., followed by about 200° C., followed by about 300° C. and a final curing step at about 400° C.

Claim 36

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition comprising a polymerizable oligomer selected from the group consisting of polyamic acids, polyamic esters, polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped; and (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein, wherein a combined dry/cure cycle is utilized and wherein one step in said cycle occurs at a temperature ranging from about 160° C. to 190° C. during which softening and planarization of the dried polyisoimide is obtained prior to crosslinking at subsequent higher temperatures.

Claim 37

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition comprising a polymerizable oligomer selected from the group consisting of polyamic acids, polyamic esters, polyisoimides and mixtures thereof, wherein said polymerizable oligomer is vinyl and/or acetylenic end capped; and (c) curing said composition in situ in said trenches to form an imidized three dimensional dielectric polyimide therein, wherein a combined dry/cure cycle is utilized and wherein one step in said cycle occurs at a temperature ranging from about 160° C. to 190° C. during which softening and planarization of the dried polyisoimide is obtained prior to crosslinking at subsequent higher temperatures.

Claim 39

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition comprising a polyisoimide, wherein said polyisoimide comprises one of the class of relatively low-molecular weight oligomers which contain at least one isoimide group along with functional groups that enable the oligomers to be cured by addition polymerization, and wherein said polyisoimide is vinyl and/or acetylene end-capped; and (c) curing said composition in situ in said trenches to form an imidized three dimensional layer, wherein said curing includes at least one 400° C. curing step.

Claim 40

A method for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in said substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling said trenches with a composition comprising a polyisoimide, wherein said polyisoimide comprises one of the class of relatively low-molecular weight oligomers which contain at least one isoimide group along with functional groups that enable the oligomers to be cured by addition polymerization, and wherein said polyisoimide is vinyl and/or acetylene end-capped; and (c) curing said composition in situ in said trenches to form an imidized three dimensional layer, wherein said curing includes at least one 400° C. curing step.