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US4699687A
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Method of synthesizing cubic system boron nitride
Assignee: Junkosha Co Ltd
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Filing: 1986-09-19
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Granted: 1987-10-13
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Expires: 2006-09-19
Abstract
Abstract Cubic system boron nitride crystals are synthesized by using a synthesizing vessel separated into a plurality of synthesizing chambers by one or more partition layers. After preparing the synthesizing vessel it is heated under extra-high pressure to achieve a required temperature gradient from chamber to chamber. A plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources are placed in the chambers according to the temperature gradient. The BN sources are placed in contact with solvent portions heated to relatively high temperatures. At least one seed crystal is placed in each solvent portion heated to relatively low temperatures. At least one cubic system boron nitride crystal is grown in each of the solvents in the chambers by the above heating of the synthesizing vessel under conditions of ultra-high pressure and temperatures assuring the required temperature gradient.
Inventors
- 👤 Shuji Yazu
- 👤 Hitoshi Sumiya
- 👤 Junji Degawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:00
CPC Classifications
C; C30; C30B; C30B9/00; B; B01; B01J; B01J3/00; B01J3/06; B01J3/062; C30B29/00; C30B29/10; C30B29/40; C30B29/403; B01J2203/00; B01J2203/06; B01J2203/0605; B01J2203/061; B01J2203/0645; B01J2203/065; B01J2203/0655; B01J2203/066; B01J2203/0675; B01J2203/068; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1096
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
198 words
A method for synthetically growing cubic system boron nitride crystals by using boron nitride sources, solvents for dissolving said boron nitride sources, and seed crystals under conditions of ultra-high pressure and high temperature for maintaining said cubic system boron nitride stable, said method comprising the following steps: preparing a synthesizing vessel having at least two chambers separated by one or more partition layers not reacting with said solvents, said at least two chambers being arrayed in order in said synthesizing vessel so as to be heated according to a temperature gradient; placing, in said at least two chambers, said solvents having different eutectic temperatures in each chamber with respect to said boron nitride sources according to said temperature gradient; placing said boron nitride source in contact with a portion of each of said solvents heated at a relatively higher temperature and placing at least a seed crystal in a portion of each of said solvents heated at a relatively lower temperature; and growing at least one cubic system boron nitride crystal in each of said solvents in said chambers by heating said synthesizing vessel for establishing said temperature gradient while maintaining conditions of ultra-high pressure and high temperature.
Claim 2
Independent Claim
198 words
A method for synthetically growing cubic system boron nitride crystals by using boron nitride sources, solvents for dissolving said boron nitride sources, and seed crystals under conditions of ultra-high pressure and high temperature for maintaining said cubic system boron nitride stable, said method comprising the following steps: preparing a synthesizing vessel having at least two chambers separated by one or more partition layers not reacting with said solvents, said at least two chambers being arrayed in order in said synthesizing vessel so as to be heated according to a temperature gradient; placing, in said at least two chambers, said solvents having different eutectic temperatures in each chamber with respect to said boron nitride sources according to said temperature gradient; placing said boron nitride source in contact with a portion of each of said solvents heated at a relatively higher temperature and placing at least a seed crystal in a portion of each of said solvents heated at a relatively lower temperature; and growing at least one cubic system boron nitride crystal in each of said solvents in said chambers by heating said synthesizing vessel for establishing said temperature gradient while maintaining conditions of ultra-high pressure and high temperature.
Claim 3
Dependent Claim
41 words
The method of synthesizing cubic system boron nitride crystals as defined in claim 1, wherein said temperature gradient is applied so that temperature is increased from one end of an array of said chambers to the other end of said array.
Claim 4
Dependent Claim
33 words
The method of synthesizing cubic system boron nitride crystals as defined in claim 1, wherein said chambers are arrayed in a radial direction and said temperature gradient is applied in said radial direction.
Claim 5
Dependent Claim
36 words
The method of synthesizing cubic system boron nitride crystals as defined in claim 2, wherein said chambers are arrayed in a vertical direction and said temperature gradient is applied to said chambers in said vertical direction.
Claim 6
Dependent Claim
39 words
The method of synthesizing cubic system boron nitride crystals as defined in claim 1, wherein a heater is provided around an outer wall of said synthesizing vessel so that said synthesizing vessel is heated for maintaining said temperature gradient.
Claim 7
Dependent Claim
66 words
The method of synthesizing cubic system boron nitride crystals as defined in claim 1, wherein a pressure of 40 Kb or more is applied for growing said cubic system boron nitride crystals, and wherein the lowest temperature applied to a portion of said solvent in the chamber heated to the lowest temperature compared to all other chambers of said synthesizing vessel, is 1000° C. or more.
Claim 8
Dependent Claim
74 words
The method of synthesizing cubic system boron nitride crystals as defined in claim 1, comprising selecting as said solvents a mixture containing at least one borate of an alkaline metal or alkaline earth metal, at least either Li 3 N or Li 3 BN 2 and at least one of Sr 3 N 2 , Ba 3 N 2 , Sr 3 B 2 N 4 and Ba 3 B 2 N 4 .
Claim 9
Dependent Claim
94 words
The method of synthesizing cubic system boron nitride crystals as defined in claim 7, selecting as said solvent a solvent containing at least either Li 3 N or LI 3 BN 2 in 1 to 10 wt. %, at least one selected from the group consisting of Sr 3 N 2 , Ba 3 N 2 , Sr 3 B 2 N 4 and Ba 3 B 2 N 4 , in 5 to 30 wt. % and at least one borate of an alkaline metal or alkaline earth metal as the remaining part.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-12 | 1991-04-13 | 1991-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-12 | 1995-04-13 | 1995-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-12 | 1999-04-13 | 1999-10-13 | $7700.00 | Window Closed / Lapsed |