US4696885A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a large surface area integrated circuit
Assignee: TECHSTAR INVESTMENT LLC
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Filing: 1986-05-09
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Granted: 1987-09-29
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Expires: 2006-05-09
Abstract
Abstract A method of forming a large area electronic element, e.g., a large area integrated microelectronic circuit which has at least one dimension in excess of three inches, by forming a film of photoresist separate from a surface to be etched, and thereafter depositing the film of photoresist on the surface to be etched. The deposited photoresist film is then exposed to actinic radiation and developed, and the exposed, underlying surface may thereafter be etched. The method for depositing the photoresist involves passing a viscous liquid composed of photoresist and solvent under positive pressure through a very thin elongated orifice that extends across and in close proximity to (e.g., 0.01 inch or less), but spaced apart from the surface to be processed to form a very thin flexible continuous film of liquid photoresist composition issuing from the orifice. The surface to be processed is linearly moved past the orifice so as to deposit the issued film of photoresist on the surface, in a thickness no greater than 100 microns, and preferably much less. The wet deposited film is then heated to drive off the solvent thereby reducing the thickness of the photoresist. The method disclosed herein is particularly suitable for processing large area rectangular substrates and continuous flexible substrates used in roll-to-roll processing equipment.
Inventors
- 👤 Meera Vijan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:05
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/16; H; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0393; H05K3/00; H05K3/0091; H05K3/0097; Y; Y10; Y10S; Y10S430/00; Y10S430/136
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
260 words
A method of forming an electronic circuit element comprising the steps of: (1) depositing a photoresist layer atop a surface of the element to be subsequently processed by: a. forming a viscous liquid comprising photoresist and solvent separate from the electronic circuit element surface; b. forcing the viscous liquid through an elongate, horizontal orifice less than 50 microns thick and in close proximity to but spaced from the electronic circuit element surface to form a flexible, substantially continuous viscous web thereof less than 50 microns thick and capable of maintaining its form and integrity between the orifice and the electronic circuit element surface; c. moving the circuit element linearly with respect to the orifice at a linear velocity greater than the linear velocity of the viscous composition issuing from the elongated horizontal orifice whereby to draw down and stretch the viscous liquid composition between the orifice and the electronic circuit element surface, thereby depositing a wet film of photoresist on the electronic circuit element surface at a lesser thickness then the viscous composition issuing from the orifice; and d. heating the film of photoresist to drive off solvent therefrom, thereby providing a thin, adherent film of photoresist of 0.2 to 2.0 micron thickness on the electronic circuit element surface. (2) exposing at least portions of the photoresist film to actinic radiation; (3) developing at least portions of the photoresist film; (4) removing soluble portions of the photoresist to uncover at least portions of the electronic circuit element surface; and (5) processing at least portions of the uncovered circuit element surface.
Claim 2
Independent Claim
260 words
A method of forming an electronic circuit element comprising the steps of: (1) depositing a photoresist layer atop a surface of the element to be subsequently processed by: a. forming a viscous liquid comprising photoresist and solvent separate from the electronic circuit element surface; b. forcing the viscous liquid through an elongate, horizontal orifice less than 50 microns thick and in close proximity to but spaced from the electronic circuit element surface to form a flexible, substantially continuous viscous web thereof less than 50 microns thick and capable of maintaining its form and integrity between the orifice and the electronic circuit element surface; c. moving the circuit element linearly with respect to the orifice at a linear velocity greater than the linear velocity of the viscous composition issuing from the elongated horizontal orifice whereby to draw down and stretch the viscous liquid composition between the orifice and the electronic circuit element surface, thereby depositing a wet film of photoresist on the electronic circuit element surface at a lesser thickness then the viscous composition issuing from the orifice; and d. heating the film of photoresist to drive off solvent therefrom, thereby providing a thin, adherent film of photoresist of 0.2 to 2.0 micron thickness on the electronic circuit element surface. (2) exposing at least portions of the photoresist film to actinic radiation; (3) developing at least portions of the photoresist film; (4) removing soluble portions of the photoresist to uncover at least portions of the electronic circuit element surface; and (5) processing at least portions of the uncovered circuit element surface.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein the liquid photoresist composition comprises from about 2 to about 8 weight percent solids, balance solvent.
Claim 4
Dependent Claim
26 words
The method of claim 2 wherein the photoresist is a positive photoresist, and the solid comprise phenol terminated phenol formaldehyde photoresist polymer and quinone diazide photosensitizer.
Claim 5
Dependent Claim
52 words
The method of claim 2 wherein the photoresist is a negative photoresist, and the solids comprise photoresist polymer chosen from the group consisting of photoactive cinnamates, diallyl phthalate prepolymer resins and isoprenoid resins, and photosensitizer chosen from the group consisting of azido compounds, nitro compounds, nitroaniline derivatives, anthrones, quinones, diphenyls, and thiazolines.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein the liquid photoresist composition has a kinematic viscosity at 25 degrees centigrade of less than about 20 centistokes.
Claim 7
Dependent Claim
27 words
The method of claim 5 wherein the liquid photoresist composition has a kinematic viscosity at 25 degrees centigrade of from about 1 centistokes to about 20 centistokes.
Claim 8
Dependent Claim
22 words
The method of claim 1 wherein the horizontal, elongate orifice is less than about 0.01 inch from the electronic circuit element surface.
Claim 9
Dependent Claim
18 words
The method of claim 7 wherein the distance is in the range from 0.002 inch to 0.01 inch.
Claim 10
Dependent Claim
33 words
The method of claim 1 wherein the film issues from the orifice initially moving in the same general direction relative to the orifice as and generally parallel to the surface to be processed.
Claim 11
Dependent Claim
54 words
The method of claim 9 wherein the orifice constitutes the die opening of a manifold type film die, said die opening having a major dimension which is substantially horizontal to the surface to be processed and which is substantially perpendicular to the direction of movement between the orifice and the surface to be processed.
Claim 12
Dependent Claim
17 words
The method of claim 1 wherein the orifice has a height of less than about 0.005 inch.
Claim 13
Dependent Claim
21 words
The method of claim 1 wherein the orifice has a height in the range of about 0.001 inch to 0.005 inch.
Claim 14
Dependent Claim
22 words
The method of claim 1 wherein the thickness of the film issuing from the orifice is from 2 microns to 10 microns.
Claim 15
Dependent Claim
33 words
The method of claim 1 comprising drawing down the issued film composition whereby the wet deposited film is from about two to about ten times thinner than the film issuing from the orifice.
Claim 16
Dependent Claim
40 words
The method of claim 1 comprising depositing a relatively thick film of the wet deposited film on the surface to be processed and heating the wet deposited film to drive off solvent therefrom and provide a relatively thin photoresist film.
Claim 17
Dependent Claim
47 words
The method of claim 15 wherein the thickness of the wet deposited film on the surface to be processed is from approximately 5 microns to approximately 100 microns heating the deposited film reduces the thickness of the photoresist film to approximately 0.2 microns to approximately 2 microns.
Claim 18
Dependent Claim
23 words
The method of claim 1 comprising heating the deposited wet film to reduce the thickness thereof by a factor of 5 to 400.
Claim 19
Dependent Claim
15 words
The method of claim 1 wherein the surface to be processed is an etchable surface.
Claim 20
Dependent Claim
31 words
The method of claim 1 wherein the surface to be processed is formed of a material chosen from the group consisting of conductors, semiconductors, insulators, and compositions settable between said states.
Claim 21
Dependent Claim
36 words
The method of claim 1 wherein the surface to be processed is formed of a material chosen from the group consisting of amorphous materials, polycrystalline materials, crystalline materials, compositions settable between said states, and mixtures thereof.
Claim 22
Dependent Claim
18 words
The method of claim 1 wherein the surface to be processed is formed of an amorphous semiconductor alloy.
Claim 23
Dependent Claim
42 words
The method of claim 1 wherein the surface to be processed is formed of a settable material having a comparatively non-conductive state and a comparatively high conductive state that is settable from one of said states to the other of said states.
Claim 24
Dependent Claim
16 words
The method of claim 22 wherein the settable material is settable and resettable between said states.
Claim 25
Dependent Claim
12 words
The method of claim 22 wherein the settable material is a chalcogenide.
Claim 26
Dependent Claim
15 words
The method of claim 1 comprising forming the electronic circuit element on a flexible substrate.
Claim 27
Dependent Claim
22 words
The method of claim 25 comprising withdrawing the flexible mechanical substrate from a roll for formation of the electronic circuit element thereon.
Claim 28
Dependent Claim
20 words
The method of claim 26 comprising collecting the flexible mechanical substrate having the circuit element formed thereon on a roll.
Claim 29
Dependent Claim
16 words
The method of claim 1 wherein the element has a major dimension greater than three inches.
Claim 30
Independent Claim
368 words
A method of forming an electronic circuit element on a continuous flexible mechanical substrate with at least one surface dimension in excess of three inches, comprising the steps of: (1) withdrawing flexible substrate from a roll thereof; (2) passing the flexible substrate through at least one stage of semiconductor deposition means whereby to deposit at least one layer of semiconductor material of the flexible substrate; (3) depositing a photoresist layer atop a surface of the element to be subsequently processed by: a. forming a viscous liquid comprising photoresist and solvent separate from the semiconductor material deposited on the surface of the flexible substrate; b. forcing the viscous liquid through an elongate, horizontal orifice less than 50 microns thick and in close proximity to but spaced from the semiconductor material deposited on the surface of the flexible substrate to form a flexible, substantially continuous viscous web thereof less than 50 microns thick and capable of maintaining its form and integrity between the orifice and the semiconductor material deposited on the flexible substrate surface; c. moving the flexible substrate including the circuit element linearly with respect to the orifice at a linear velocity greater than the linear velocity of the viscous composition issuing from the elongated horizontal orifice whereby to draw down and stretch the viscous liquid composition between the orifice and the electronic circuit element surface, thereby depositing a wet film of photoresist atop the semiconductor material deposited on the flexible substrate at a lesser thickness than the viscous composition issuing from the orifice; and d. heating the film of photoresist to drive off solvent therefrom, thereby providing a thin, adherent film of photoresist of 0.2 to 2.0 micron thickness atop the deposited semiconductor material on the flexible substrate surface; (4) exposing at least portions of the photoresist film to actinic radiation; (5) developing at least portions of the photoresist film; (6) removing soluble portions of the photoresist to uncover at least portions of the deposited semiconductor material on the surface of the flexible substrate; (7) processing at least portions of the uncovered deposited semiconductor material on the surface of the flexible substrate; and (8) collecting the continuous flexible substrate having an electronic circuit element thereon on roll means.
Claim 31
Independent Claim
368 words
A method of forming an electronic circuit element on a continuous flexible mechanical substrate with at least one surface dimension in excess of three inches, comprising the steps of: (1) withdrawing flexible substrate from a roll thereof; (2) passing the flexible substrate through at least one stage of semiconductor deposition means whereby to deposit at least one layer of semiconductor material of the flexible substrate; (3) depositing a photoresist layer atop a surface of the element to be subsequently processed by: a. forming a viscous liquid comprising photoresist and solvent separate from the semiconductor material deposited on the surface of the flexible substrate; b. forcing the viscous liquid through an elongate, horizontal orifice less than 50 microns thick and in close proximity to but spaced from the semiconductor material deposited on the surface of the flexible substrate to form a flexible, substantially continuous viscous web thereof less than 50 microns thick and capable of maintaining its form and integrity between the orifice and the semiconductor material deposited on the flexible substrate surface; c. moving the flexible substrate including the circuit element linearly with respect to the orifice at a linear velocity greater than the linear velocity of the viscous composition issuing from the elongated horizontal orifice whereby to draw down and stretch the viscous liquid composition between the orifice and the electronic circuit element surface, thereby depositing a wet film of photoresist atop the semiconductor material deposited on the flexible substrate at a lesser thickness than the viscous composition issuing from the orifice; and d. heating the film of photoresist to drive off solvent therefrom, thereby providing a thin, adherent film of photoresist of 0.2 to 2.0 micron thickness atop the deposited semiconductor material on the flexible substrate surface; (4) exposing at least portions of the photoresist film to actinic radiation; (5) developing at least portions of the photoresist film; (6) removing soluble portions of the photoresist to uncover at least portions of the deposited semiconductor material on the surface of the flexible substrate; (7) processing at least portions of the uncovered deposited semiconductor material on the surface of the flexible substrate; and (8) collecting the continuous flexible substrate having an electronic circuit element thereon on roll means.
Claim 32
Dependent Claim
22 words
The method of claim 29 wherein the liquid photoresist composition comprises from about 2 to about 8 weight percent solids, balance solvent.
Claim 33
Dependent Claim
26 words
The method of claim 30 wherein the photoresist is a positive photoresist, and the solids comprise phenol terminated phenol formaldehyde photoresist polymer and quinone diazide photosensitizer.
Claim 34
Dependent Claim
52 words
The method of claim 30 wherein the photoresist is a negative photoresist, and the solids comprise photoresist polymer chosen from the group consisting of photoactive cinnamates, diallyl phthalate prepolymer resins, and isoprenoid resins and photosensitizer chosen from the group consisting of axido compounds, nitro compounds, nitroaniline derivatives, anthrones, quinones, diphenyls, and thiazolines.
Claim 35
Dependent Claim
27 words
The method of claim 30 wherein the liquid photoresist composition has a kinematic viscosity at 25 degrees centigrade of from about 1 centistoke to about 20 centistokes.
Claim 36
Dependent Claim
39 words
The method of claim 29 comprising depositing a relatively thick film of the wet deposited film on the deposited semiconductor material and heating the wet deposited film to drive off solvent therefrom and provide a relatively thin, photoresist film.
Claim 37
Dependent Claim
49 words
The method of claim 34 comprising depositing the wet deposited photoresist film on the deposited semiconductor to a thickness of from approximately 5 microns to approximately 100 microns, and heating the wet deposited photoresist film to reduce the thickness thereof to from approximately 0.2 microns to approximately 2 microns.
Claim 38
Dependent Claim
31 words
The method of claim 29 wherein the electronic element has a surface formed of a material chosen from the group consisting of conductors, semiconductors, insulators, and compositions settable between said states.
Claim 39
Dependent Claim
37 words
The method of claim 29 wherein the surface of the electronic element is formed of a material chosen from the group consisting of amorphous materials, polycrystalline materials, crystaline materials, compositions settable between said states, and mixtures thereof.
Claim 40
Dependent Claim
19 words
The method of claim 29 wherein the surface of the electronic element is formed of an amorphous semiconductor alloy.
Claim 41
Dependent Claim
43 words
The method of claim 29 wherein the surface of the electronic element is formed of a settable material having a comparatively non-conductive state and a comparatively high conductive state that is settable from one of said states to the other of said states.
Claim 42
Dependent Claim
16 words
The method of claim 39 wherein the settable material is settable and resettable between said states.
Claim 43
Dependent Claim
12 words
The method of claim 39 wherein the settable material is a chalcogenide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-28 | 1991-03-30 | 1991-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-28 | 1995-03-30 | 1995-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-28 | 1999-03-30 | 1999-09-29 | $7700.00 | Window Closed / Lapsed |