Patent US4692791A successfully refreshed from Google Patents.
US4692791A
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Monolithic IMPATT with stripline leads
Assignee: Raytheon Co
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Filing: 1986-04-08
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Granted: 1987-09-08
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Expires: 2006-04-08
Abstract
Abstract The disclosure relates to a monolithic circuit and method of making same which includes the use of two substrates of different semiconductor materials or two substrates of the same semiconductor material wherein the processing steps required for certain parts of the circuit are incompatible with the processing steps required for other parts of the circuit.
Inventors
- 👤 Burhan Bayraktaroglu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:40
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; H10W; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10W20/0242; H10W20/0245; H10W20/20; H10W20/40
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
84 words
A monolithic semiconductor structure which comprises: (a) a first semiconductor layer including at least one circuit element and having a heat sink on a surface thereof, (b) a second semiconductor layer disposed on said heat sink, (c) insulating means insulating said second semiconductor layer from said first semiconductor layer; and (d) electrically conductive means disposed on said insulating means and coupling by microstrip on said first layer said at least one circuit element to a microwave diode on or in said second semiconductor layer.
Claim 2
Dependent Claim
84 words
A monolithic semiconductor structure which comprises: (a) a first semiconductor layer including at least one circuit element and having a heat sink on a surface thereof, (b) a second semiconductor layer disposed on said heat sink, (c) insulating means insulating said second semiconductor layer from said first semiconductor layer; and (d) electrically conductive means disposed on said insulating means and coupling by microstrip on said first layer said at least one circuit element to a microwave diode on or in said second semiconductor layer.
Claim 3
Dependent Claim
27 words
A monolithic semiconductor structure as set forth in claim 1 wherein said first semiconductor layer is composed of a semiconductor material different from said second semiconductor layer.
Claim 4
Dependent Claim
19 words
A monolithic semiconductor structure as set forth in claim 1 wherein said heat sink extends through said first layer.
Claim 5
Dependent Claim
19 words
A monolithic semiconductor structure as set forth in claim 2 wherein said heat sink extends through said first layer.
Claim 6
Dependent Claim
19 words
A monolithic semiconductor structure as set forth in claim 1 wherein said first semiconductor layer includes electrical components therein.
Claim 7
Dependent Claim
19 words
A monolithic semiconductor structure as set forth in claim 2 wherein said first semiconductor layer includes electrical components therein.
Claim 8
Dependent Claim
19 words
A monolithic semiconductor structure as set forth in claim 3 wherein said first semiconductor layer includes electrical components therein.
Claim 9
Dependent Claim
19 words
A monolithic semiconductor structure as set forth in claim 4 wherein said first semiconductor layer includes electrical components therein.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-07 | 1991-03-09 | 1991-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-07 | 1995-03-09 | 1995-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-07 | 1999-03-09 | 1999-09-08 | $7700.00 | Window Closed / Lapsed |