Patent US4689115A successfully refreshed from Google Patents.
US4689115A
Expired / Lapsed
US
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Gaseous etching process
Assignee: Nokia Bell Labs
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Filing: 1985-04-26
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Granted: 1987-08-25
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Expires: 2005-04-26
Abstract
Abstract A process is described for preparing III-V compound semiconductor devices (e.g., gallium arsenide devices) in which gaseous bromine or chlorine is used as an etch. This etch procedure provides highly uniform etching. High selectivity for etching gallium arsenide in the presence of gallium aluminum arsenide may be obtained by the addition of oxidant gas such as water vapor.
Inventors
- 👤 Dale E. Ibbotson
- 👤 Charles W. Tu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:19
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/246; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/01
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
65 words
A process for fabricating a semiconductor device comprising at least one III-V semiconductor compound in which at least one of the III-V semiconductor compounds is etched by a non-plasma etching procedure using an etchant gas characterized in that the etchant gas comprises at least one gas selected from the group consisting of chlorine gas and bromine gas with a pressure between 0.1 and 100 millitorrs.
Claim 2
Dependent Claim
65 words
A process for fabricating a semiconductor device comprising at least one III-V semiconductor compound in which at least one of the III-V semiconductor compounds is etched by a non-plasma etching procedure using an etchant gas characterized in that the etchant gas comprises at least one gas selected from the group consisting of chlorine gas and bromine gas with a pressure between 0.1 and 100 millitorrs.
Claim 3
Dependent Claim
17 words
The process of claim 1 in which the etchant gas pressure is between 1 and 10 millitorrs.
Claim 4
Dependent Claim
21 words
The process of claim 1 in which the temperature of the surface being etched is between 60 and 200 degrees C.
Claim 5
Dependent Claim
17 words
The process of claim 3 in which the temperature range is between 60 and 140 degrees C.
Claim 6
Dependent Claim
17 words
The process of claim 4 in which the temperature range is between 100 and 110 degrees C.
Claim 7
Dependent Claim
35 words
The process of claim 1 in which a first III-V semiconductor compound is etched in the presence of one or more second III-V semiconductor compounds characterized in that the etchant further comprises an oxidant gas.
Claim 8
Dependent Claim
21 words
The process of claim 6 in which the oxidant gas is selected from the group consisting of oxygen and water vapor.
Claim 9
Dependent Claim
13 words
The process of claim 7 in which the oxidant gas is water vapor.
Claim 10
Dependent Claim
30 words
The process of claim 8 in which the pressure of bromine gas is between 1 and 10 mTorrs and the pressure of water vapor is between 0.1 and 2 mTorrs.
Claim 11
Dependent Claim
32 words
The process of claim 9 in which the first III-V semiconductor compound is gallium arsenide and the second III-V semiconductor compound comprises gallium aluminum arsenide with at least 10 mole percent aluminum.
Claim 12
Dependent Claim
29 words
The process of claim 9 in which the first III-V semiconductor compound is indium arsenide and the second III-V semiconductor compound comprises aluminum indium arsenide or gallium indium arsenide.
Claim 13
Dependent Claim
14 words
The process of claim 1 in which the etchant gas consists essentially of bromine.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-24 | 1991-02-23 | 1991-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-24 | 1995-02-23 | 1995-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-24 | 1999-02-23 | 1999-08-25 | $7700.00 | Window Closed / Lapsed |