US4686760A
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Method of making photoelectric conversion device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-03-31
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Granted: 1987-08-18
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Expires: 2006-03-31
Abstract
Abstract A plurality n of semiconductor elements U i to U n are sequentially formed on a substrate side by side and connected in series. The element U i (where i=1, 2, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the electrode E i and a second electrode F i formed on the laminate member Q i . The electrode F j+1 (j=1, 2, . . . (n-1)) is coupled with the electrode E j via a coupling portion K j formed by an extension of the electrode F j+1 . The laminate member Q i has an N (or P) type first semiconductor layer, an I type second semiconductor layer and P (or N) type third semiconductor layer. The second electrode F i and the coupling portion K j are formed by a layered member having a conductive metal oxide layer making contact with the non-single-crystal semiconductor laminate member Q i and a conductive material layer formed on the metal oxide layer where the second conductive material layer of the second electrode F i is a layer formed of aluminum or a material consisting principally thereof.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:51
CPC Classifications
H; H10; H10F; H10F99/00; H10F39/00; H10F39/10; H10F39/107; H10F10/00; H10F10/10; H10F10/17; H10F19/00; H10F19/30; H10F19/31; H10F19/35; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y10; Y10S; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
458 words
A method of making a photoelectric conversion device in which a plurality n (when n is an integer greater than one) of semiconductor element U 1 to U n are sequentially formed side by side on a substrate having a insulating surface and connected in series one after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i , and a second electrode F i on the laminate member Q i , the second electrode F j-1 of the semiconductor element U j-1 (j=1, 2, . . . (n-1)) being connected via coupling portion K j to the first electrode E j , comprising the steps of: forming a first conductive layer on the substrate; forming (n-1) sequentially arranged first grooves G 1 to G n-1 in the first conductive layer to form therein n sequentially arranged first electrodes E 1 to E n separated by the first grooves G 1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction and continuously extending onto the first electrodes E 1 to E n and into the first grooves G 1 to G n-1 so that the regions of the non-single-crystal semiconductor laminate layer on the electrodes E 1 to E n may be non-single-crystal semiconductor laminate members Q 1 to Q n ; forming (n-1) sequentially arranged second grooves O 1 to O n-1 extending through members Q 1 to Q n-1 and the first electrodes E 1 to E n-1 to expose therethrough the top portions and sides of the first electrodes E 1 to E n , respectively; forming on the substrate a second conductive layer continuously extending on the non-single-crystal semiconductor laminate member Q 1 to Q n and into the second grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 , the coupling portions K 1 to K n-1 being connected to the top portions and sides of the first electrodes E 1 to E n-1 through the second grooves O 1 to O n-1 , respectively; and forming (n-1) sequentially arranged isolating portions H 1 to H n-1 in at least the second conductive layer to form therein n sequentially arranged second electrodes F 1 to F n separated by the isolating portions H 1 to H n and opposite the first electrodes E 1 to E n through the non-single-crystal semiconductor laminate members Q 1 to Q n , respectively, the second electrode F j-1 being connected to the first electrode E j through the coupling portion K j .
Claim 2
Independent Claim
458 words
A method of making a photoelectric conversion device in which a plurality n (when n is an integer greater than one) of semiconductor element U 1 to U n are sequentially formed side by side on a substrate having a insulating surface and connected in series one after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i , and a second electrode F i on the laminate member Q i , the second electrode F j-1 of the semiconductor element U j-1 (j=1, 2, . . . (n-1)) being connected via coupling portion K j to the first electrode E j , comprising the steps of: forming a first conductive layer on the substrate; forming (n-1) sequentially arranged first grooves G 1 to G n-1 in the first conductive layer to form therein n sequentially arranged first electrodes E 1 to E n separated by the first grooves G 1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction and continuously extending onto the first electrodes E 1 to E n and into the first grooves G 1 to G n-1 so that the regions of the non-single-crystal semiconductor laminate layer on the electrodes E 1 to E n may be non-single-crystal semiconductor laminate members Q 1 to Q n ; forming (n-1) sequentially arranged second grooves O 1 to O n-1 extending through members Q 1 to Q n-1 and the first electrodes E 1 to E n-1 to expose therethrough the top portions and sides of the first electrodes E 1 to E n , respectively; forming on the substrate a second conductive layer continuously extending on the non-single-crystal semiconductor laminate member Q 1 to Q n and into the second grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 , the coupling portions K 1 to K n-1 being connected to the top portions and sides of the first electrodes E 1 to E n-1 through the second grooves O 1 to O n-1 , respectively; and forming (n-1) sequentially arranged isolating portions H 1 to H n-1 in at least the second conductive layer to form therein n sequentially arranged second electrodes F 1 to F n separated by the isolating portions H 1 to H n and opposite the first electrodes E 1 to E n through the non-single-crystal semiconductor laminate members Q 1 to Q n , respectively, the second electrode F j-1 being connected to the first electrode E j through the coupling portion K j .
Claim 3
Dependent Claim
105 words
A method of making a phtoelectric conversion device according to claim 1, wherein the second conductive layer is a layered member having a light transparent layer which contacts the non-single-crystal semiconductor laminate member Q 1 to Q n and a reflective conductive material layer on the light transparent layer, the reflective conductive material layer being formed of aluminum or a material consisting principally thereof, the light transparent layer of the coupling portions K 1 to K n-1 being connected to the top portions and sides of the first electrodes E 1 to E n-1 through the second grooves O 1 to O n-1 , respectively.
Claim 4
Independent Claim
248 words
A method of making a photoelectric conversion device in which a plurality n (when n is an integer greater than one) of semiconductor elements U 1 to U n are sequentially formed side by side on a substrate having a insulating surface and connected in series on after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i , and a second electrode F i on the laminate member Q i , the second electrode F j-1 of the semiconductor element U j-1 (j=1, 2, . . . (n-1)) being connected via coupling portion K j to the first electrode E j , comprising the steps of: forming a first conductive layer on the substrate; forming (n-1) sequentially arranged first grooves G 1 to G n-1 in the first conductive layer to form therein n sequentially arranged first electrodes E 1 to E n separated by the first grooves G1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction and continuously extending onto the first electrodes E 1 to E n and into the first grooves G 1 to G n-1 so that the regions of the non-single-crystal semiconductor laminate layer on the electrodes E 1 to E n may be non-single-crystal semiconductor laminate members Q 1 to Q n ;
Claim 5
Independent Claim
248 words
A method of making a photoelectric conversion device in which a plurality n (when n is an integer greater than one) of semiconductor elements U 1 to U n are sequentially formed side by side on a substrate having a insulating surface and connected in series on after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i , and a second electrode F i on the laminate member Q i , the second electrode F j-1 of the semiconductor element U j-1 (j=1, 2, . . . (n-1)) being connected via coupling portion K j to the first electrode E j , comprising the steps of: forming a first conductive layer on the substrate; forming (n-1) sequentially arranged first grooves G 1 to G n-1 in the first conductive layer to form therein n sequentially arranged first electrodes E 1 to E n separated by the first grooves G1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction and continuously extending onto the first electrodes E 1 to E n and into the first grooves G 1 to G n-1 so that the regions of the non-single-crystal semiconductor laminate layer on the electrodes E 1 to E n may be non-single-crystal semiconductor laminate members Q 1 to Q n ;
Claim 6
Dependent Claim
214 words
forming (n-1) sequentially arranged second grooves O 1 to O n-1 extending through members Q 1 to Q n-1 and the first electrodes E 1 to E n-1 and into the substrate to expose therethrough the sides and bottom portions of the first electrodes E 1 to E n , respectively; forming on the substrate a second conductive layer continuously extending on the non-single-crystal semiconductor laminate members Q 1 to Q n and into the second grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 , the coupling portion K 1 to K n being connected to the sides and bottom portions of the first electrodes E 1 to E n-1 through the second grooves O 1 to O n-1 , respectively; and forming (n-1) sequentially arranged isolating portions H 1 to H N - in at least the second conductive layer to form therein n sequentially arranged second electrodes F 1 to F n separated by the isolating portions H 1 to H n and opposite the first electrodes E 1 to E n through the non-single-crystal semiconductor laminate members Q 1 to Q n , respectively, the second electrode F j-1 being connected to the first electrode E j through the coupling portion K j .
Claim 7
Dependent Claim
214 words
forming (n-1) sequentially arranged second grooves O 1 to O n-1 extending through members Q 1 to Q n-1 and the first electrodes E 1 to E n-1 and into the substrate to expose therethrough the sides and bottom portions of the first electrodes E 1 to E n , respectively; forming on the substrate a second conductive layer continuously extending on the non-single-crystal semiconductor laminate members Q 1 to Q n and into the second grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 , the coupling portion K 1 to K n being connected to the sides and bottom portions of the first electrodes E 1 to E n-1 through the second grooves O 1 to O n-1 , respectively; and forming (n-1) sequentially arranged isolating portions H 1 to H N - in at least the second conductive layer to form therein n sequentially arranged second electrodes F 1 to F n separated by the isolating portions H 1 to H n and opposite the first electrodes E 1 to E n through the non-single-crystal semiconductor laminate members Q 1 to Q n , respectively, the second electrode F j-1 being connected to the first electrode E j through the coupling portion K j .
Claim 8
Dependent Claim
106 words
A method of making a photoelectric conversion device according to claim 3, wherein the second conductive layer is a layered member having a light transparent layer which contacts with the non-single-crystal semiconductor laminate member Q 1 to Q n and a reflective conductive material layer on the light tranparent layer, the reflective conductive material layer being formed of aluminum or a material consisting principally thereof, the light transparent layer of the coupling portions K 1 to K n-1 being connected to the sides and bottom portions of the first electrodes E 1 to E n-1 through the second grooves O 1 to O n-1 , respectively.
Claim 9
Independent Claim
465 words
A method of making a photoelectric conversion device in which a plurality n (when n is an integer greater than one) of semiconductor elements U 1 to U n are sequentially formed side by side on a substrate having an insulating surface and connected in series one after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i , and a second electrode F i on the laminate member Q i , the second electrode F j-1 of the semiconductor element U j-1 (j=1, 2, . . . (n-1)) being connected via coupling portion K j to the first electrode E j , comprising the steps of: forming a first conductive layer on the substrate; forming (n-1) sequentially arranged first grooves G 1 to G n-1 in the first conductive layer to form therein n sequentially arranged first electrodes E 1 to E n separated by the first grooves G 1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction and continuously extending onto the first electrodes E 1 to E n and into the first grooves G 1 to G n-1 so that the regions of the non-single-crystal semiconductor laminate layer on the electrodes E 1 to E n may be non-single-crystal semiconductor laminate members Q 1 to Q n ; forming (n-1) sequentially arranged second grooves O 1 to O n-1 extending through members Q 1 to Q n-1 and the first electrodes E 1 to E n-1 and into the substrate to expose therethrough top portions, sides, and bottom portions of the first electrodes E 1 to E n , respectively; forming on the substrate a second conductive layer continuously extending on the non-single-crystal semiconductor laminate member Q 1 to Q n and into the second grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 , the coupling portions K 1 to K n-1 being connected to the top portions, sides, and bottom portions of the first electrodes E 1 to E n-1 through the second grooves O 1 to O n-1 , respectively; and forming (n-1) sequentially arranged isolating portions H 1 to H n-1 in at least the second conductive layer to form therein n sequentially arranged second electrodes F 1 to F n separated by the isolating portions H 1 to H n and opposite the first electrodes E 1 to E n through the non-single-crystal semiconductor laminate members Q 1 to Q n , respectively, the second electrode F j-1 being connected to the first electrode E j through the coupling portion K j .
Claim 10
Independent Claim
465 words
A method of making a photoelectric conversion device in which a plurality n (when n is an integer greater than one) of semiconductor elements U 1 to U n are sequentially formed side by side on a substrate having an insulating surface and connected in series one after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i , and a second electrode F i on the laminate member Q i , the second electrode F j-1 of the semiconductor element U j-1 (j=1, 2, . . . (n-1)) being connected via coupling portion K j to the first electrode E j , comprising the steps of: forming a first conductive layer on the substrate; forming (n-1) sequentially arranged first grooves G 1 to G n-1 in the first conductive layer to form therein n sequentially arranged first electrodes E 1 to E n separated by the first grooves G 1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction and continuously extending onto the first electrodes E 1 to E n and into the first grooves G 1 to G n-1 so that the regions of the non-single-crystal semiconductor laminate layer on the electrodes E 1 to E n may be non-single-crystal semiconductor laminate members Q 1 to Q n ; forming (n-1) sequentially arranged second grooves O 1 to O n-1 extending through members Q 1 to Q n-1 and the first electrodes E 1 to E n-1 and into the substrate to expose therethrough top portions, sides, and bottom portions of the first electrodes E 1 to E n , respectively; forming on the substrate a second conductive layer continuously extending on the non-single-crystal semiconductor laminate member Q 1 to Q n and into the second grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 , the coupling portions K 1 to K n-1 being connected to the top portions, sides, and bottom portions of the first electrodes E 1 to E n-1 through the second grooves O 1 to O n-1 , respectively; and forming (n-1) sequentially arranged isolating portions H 1 to H n-1 in at least the second conductive layer to form therein n sequentially arranged second electrodes F 1 to F n separated by the isolating portions H 1 to H n and opposite the first electrodes E 1 to E n through the non-single-crystal semiconductor laminate members Q 1 to Q n , respectively, the second electrode F j-1 being connected to the first electrode E j through the coupling portion K j .
Claim 11
Dependent Claim
107 words
A method of making a photoelectric conversion device according to claim 5, wherein the second conductive layer is a layered member having a light transparent layer which contacts the non-single-crystal semiconductor laminate member Q 1 to Q n and a reflective conductive material layer on the light transparent layer, the reflective conductive material layer being formed of aluminum or a material consisting principally thereof, the light transparent layer of the coupling portions K 1 to K n-1 being connected to the top portions, sides, and bottom portions of the first electrodes E 1 to E n-1 through the second grooves O 1 to O n-1 , respectively.
Claim 12
Dependent Claim
34 words
A method of making a photoelectric conversion device according to any one of claim 1 to 6 wherein the light transparent layer of the second conductive layer is formed of a conductive metal oxide.
Claim 13
Independent Claim
33 words
A method of making a photoelectric conversion device according to any one of claims 1 to 6, wherein the first grooves G 1 to G n-1 are formed by using a laser beam.
Claim 14
Dependent Claim
35 words
A method of making a photoelectric conversion device according to claim 8, wherein the formation of the first grooves G 1 to G n-1 by using the laser beam is carried out in the air.
Claim 15
Dependent Claim
47 words
A method of making a photoelectric conversion device according to claim 9, wherein the formation of the first grooves G 1 to G n-1 by using the laser beam is followed by etching using hydrogen fluoride, hydrogen chloride, Freon gas, hydrofluoric acid, hydrochloric acid, or Freon liquid.
Claim 16
Dependent Claim
42 words
A method of making a photoelectric conversion device according to claim 8, wherein the first grooves G 1 to G n-1 formed by using the laser beam are formed by the aid of a computer while monitoring through a video camera device.
Claim 17
Independent Claim
33 words
A method of making a photoelectric conversion device according to any one of claims 1 to 6, wherein the second grooves O 1 to O n-1 are formed by using a laser beam.
Claim 18
Dependent Claim
35 words
A method of making a photoelectric conversion device according to claim 12, wherein the formation of the second grooves O 1 to O n-1 by using the laser beam is carried out in the air.
Claim 19
Dependent Claim
49 words
A method of making a photoelectric conversion device according to claim 13, wherein the formation of the second grooves O 1 to O n-1 by using the second laser beam is followed by etching through using hydrogen fluoride, hydrogen chloride, Freon gas, hydrofluoric acid, hydrochloric acid, or Freon liquid.
Claim 20
Dependent Claim
42 words
A method of making a photoelectric conversion device according to claim 12, wherein the second grooves O 1 to O n-1 formed by using the laser beam are formed by the aid of a computer while monitoring through a video camera device.
Claim 21
Independent Claim
32 words
A method of making a photoelectric conversion device according to any one of claims 1 to 6, wherein the isolating portions H 1 to H n-1 are formed by using laser beam.
Claim 22
Dependent Claim
35 words
A method of making a photoelectric conversion device according to claim 16, wherein the formation of the isolating portions H 1 to H n-1 by using the laser beam is carried out in the air.
Claim 23
Dependent Claim
49 words
A method of making a photoelectric conversion device according to claim 17, wherein the formation of the isolating portions H 1 to H n-1 by using the third laser beam scanning is followed by etching through using hydrogen fluoride, hydrogen chloride, Freon gas, hydrofluoric acid, hydrochloric acid, Freon liquid.
Claim 24
Dependent Claim
37 words
A method of making a photoelectric conversion device according to claim 16, wherein the formation of the isolating portions H 1 to H n-1 by using the laser beam is carried out in an atmosphere of oxygen.
Claim 25
Dependent Claim
47 words
A method of making a photoelectric conversion device according to claim 16, wherein the isolating portions H 1 to H n-1 formed by using the laser beam are formed so that the isolating portion H j may extend into the non-single-crystal semiconductor laminate member Q j .
Claim 26
Dependent Claim
42 words
A method of making a photoelectric conversion device according to claim 16, wherein the isolating portions H 1 to H n-1 formed by using the laser beam are formed by the aid of a computer while monitoring through a video camera device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-17 | 1991-02-16 | 1991-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-17 | 1995-02-16 | 1995-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-17 | 1999-02-16 | 1999-08-18 | $7700.00 | Window Closed / Lapsed |