US4527006A
Expired / Lapsed
US
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Photoelectric conversion device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1983-11-23
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Granted: 1985-07-02
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Expires: 2003-11-23
Abstract
Abstract A plurality n of semiconductor elements U i to U n are sequentially formed on a substrate side by side and connected in series. The element U i (where i=1, 2, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconducotr laminate member Q i formed on the electrode E i and a second electrode F i formed on the laminate member Q i . The electrode F j+1 (j=1, 2, . . . (n-1)) is coupled with the electrode E j via a coupling portion K j formed by an extension of the electrode F j+1 . The laminate member Q i has an N (or P) type first semiconductor layer, an I type second semiconductor layer and P (or N) type third semiconductor layer. The second electrode F i and the coupling portion K j are formed by a layered member having a conductive metal oxide layer making contact with the non-single-crystal semiconductor laminate member Q i and a conductive material layer formed on the metal oxide layer where the second conductive material layer of the second electrode F i is a layer formed of chromium or a material consisting principally thereof.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:51
CPC Classifications
H; H10; H10F; H10F99/00; H10F39/00; H10F39/10; H10F39/107; H10F10/00; H10F10/10; H10F10/17; H10F19/00; H10F19/30; H10F19/31; H10F19/35; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y10; Y10S; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
268 words
A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and having formed therein at least one semiconductor junction, and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semiconductor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 ; wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E j ; wherein the second electrodes F j and F j+1 are separated by an isolating portion H j ; and wherein the second electrode F i is formed by a layered member having a conductive metal oxide layer making contact with the non-single-crystal semiconductor laminate member Q i and a conductive material layer formed on the metal oxide layer where the conductive material layer of the second electrode F i is a layer formed of chromium or a material consisting principally thereof.
Claim 2
Dependent Claim
268 words
A photoelectric conversion device comprising: a substrate having an insulating surface; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed thereon side by side and connected in series one after another; wherein the semiconductor element U i (i=1, 2, . . . n) has a first electrode E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and having formed therein at least one semiconductor junction, and a second electrode F i formed on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semiconductor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 ; wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q i in opposing relation to the first electrode E j ; wherein the second electrodes F j and F j+1 are separated by an isolating portion H j ; and wherein the second electrode F i is formed by a layered member having a conductive metal oxide layer making contact with the non-single-crystal semiconductor laminate member Q i and a conductive material layer formed on the metal oxide layer where the conductive material layer of the second electrode F i is a layer formed of chromium or a material consisting principally thereof.
Claim 3
Dependent Claim
17 words
A photoelectric conversion device according to claim 1, wherein the isolating portion H j is a groove.
Claim 4
Dependent Claim
38 words
A photoelectric conversion device according to claim 2, wherein a first insulating layer is formed on the non-single-crystal semiconductor laminate member Q j from the top thereof in the region exposed to the isolating portion H j .
Claim 5
Dependent Claim
32 words
A photoelectric conversion device according to claim 2, wherein a second insulating layer continuously extending on the second electrodes F j and F j+1 extends into the isolating portion H j .
Claim 6
Dependent Claim
21 words
A photoelectric conversion device according to claim 2 wherein the groove extends into the non-single-crystal semiconductor laminate member Q j .
Claim 7
Dependent Claim
57 words
A photoelectric conversion device according to claim 1, wherein the non-single-crystal semiconductor laminate member Q i has an N type non-single-crystal semiconductor layer making contact with the second electrode F i and wherein the second metal oxide layer of the second electrode F i is a layer formed of indium oxide or a material consisting principally thereof.
Claim 8
Dependent Claim
58 words
A photoelectric conversion device according to claim 1, wherein the non-single-crystal semiconductor laminate member Q i has a P type non-single-crystal semiconductor layer making contact with the second electrode F i , and wherein the second metal oxide layer of the second electrode F i is a layer formed of tin oxide or a material consisting principally thereof.
Claim 9
Dependent Claim
111 words
A photoelectric conversion device according to claim 1, wherein the first electrode E i is formed by a layered member having a conductive material layer and a conductive metal oxide layer formed on the last-mentioned conductive material layer and making contact with the non-single-crystal semiconductor laminate member Q i , wherein a groove O j is cut in the non-single-crystal semiconductor laminate member Q j between the second electrode F j+1 and the first electrode E j to extend into the first electrode E j and wherein the metal oxide layer of the coupling portion K j is coupled with the metal oxide layer of the first electrode E j .
Claim 10
Dependent Claim
20 words
A photoelectric conversion device as in claim 1 where said substrate and said first electrode E i are light transparent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-01 | 1988-12-31 | 1989-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-01 | 1992-12-31 | 1993-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-01 | 1996-12-31 | 1997-07-02 | $7700.00 | Window Closed / Lapsed |