Photoelectric conversion device manufacturing method

Claim 1

A method of making a photoelectric conversion device in which a plurality n (where n is an integer larger than 2) of semiconductor elements U 1 to U n are sequentially formed side by side on a substrate having an insulating surface and connected in series one after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i and a second electrode F i on the non-single-crystal semiconductor laminate member Q i , the second electrode F j+1 (j=1, 2, . . . (n-1)) being connected via coupling portion K j to the first electrode E j , comprising the steps of: forming on the substrate a first conductive layer comprising a first conductive metal oxide layer; forming (n-1) sequentially arranged first grooves G 1 to G n-1 in the first conductive layer by using a first laser beam to form therein n sequentially arranged first electrodes E 1 to E n separated by the first grooves G 1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction and covering the first grooves G 1 to G n-1 and the first electrodes E 1 to E n ; forming (n-1) sequentially arranged grooves O 1 to O n-1 in the non-single-crystal semiconductor laminate layer by using a second laser beam to form n sequentially arranged non-single-crystal semiconductor laminate members Q 1 to Q n extending on the first electrode E 1 to E n , respectively, and to expose portions of the first electrodes E 1 to E n-1 to the outside through the grooves O 1 to O n-1 , respectively; following the formation of the second grooves O 1 to O n-1 with a deburring or an etch using a gas or a liquid comprising hydrofluoric acid, hydrochloric acid, or Freon liquid; forming a second conductive layer which is a laminate member comprising a second conductive metal oxide layer and which continuously extends on the non-single-crystal semiconductor laminate members Q 1 to Q n and extends into the grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 which are connected to the first electrodes E 1 to E n-1 through the grooves O 1 to O n-1 , respectively; and forming (n-1) sequentially arranged isolating portions H 1 to H n-1 in at least the second conductive layer to form n sequentially arranged second electrodes F 1 to F n separated by the isolating portions H 1 to H n-1 and opposing the first electrodes E 1 to E -1 through the isolating portions H 1 to H n-1 , respectively, the second electrode F j+1 being connected to the first electrode E j through the coupling portion K j by the contact between the second conductive metal oxide layer of the coupling portion K j and the first conductive metal oxide layer of the first electrode E j .

Claim 2

A method of making a photoelectric conversion device in which a plurality n (where n is an integer larger than 2) of semiconductor elements U 1 to U n are sequentially formed side by side on a substrate having an insulating surface and connected in series one after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i and a second electrode F i on the non-single-crystal semiconductor laminate member Q i , the second electrode F j+1 (j=1, 2, . . . (n-1)) being connected via coupling portion K j to the first electrode E j , comprising the steps of: forming on the substrate a first conductive layer comprising a first conductive metal oxide layer; forming (n-1) sequentially arranged first grooves G 1 to G n-1 in the first conductive layer by using a first laser beam to form therein n sequentially arranged first electrodes E 1 to E n separated by the first grooves G 1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction and covering the first grooves G 1 to G n-1 and the first electrodes E 1 to E n ; forming (n-1) sequentially arranged grooves O 1 to O n-1 in the non-single-crystal semiconductor laminate layer by using a second laser beam to form n sequentially arranged non-single-crystal semiconductor laminate members Q 1 to Q n extending on the first electrode E 1 to E n , respectively, and to expose portions of the first electrodes E 1 to E n-1 to the outside through the grooves O 1 to O n-1 , respectively; following the formation of the second grooves O 1 to O n-1 with a deburring or an etch using a gas or a liquid comprising hydrofluoric acid, hydrochloric acid, or Freon liquid; forming a second conductive layer which is a laminate member comprising a second conductive metal oxide layer and which continuously extends on the non-single-crystal semiconductor laminate members Q 1 to Q n and extends into the grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 which are connected to the first electrodes E 1 to E n-1 through the grooves O 1 to O n-1 , respectively; and forming (n-1) sequentially arranged isolating portions H 1 to H n-1 in at least the second conductive layer to form n sequentially arranged second electrodes F 1 to F n separated by the isolating portions H 1 to H n-1 and opposing the first electrodes E 1 to E -1 through the isolating portions H 1 to H n-1 , respectively, the second electrode F j+1 being connected to the first electrode E j through the coupling portion K j by the contact between the second conductive metal oxide layer of the coupling portion K j and the first conductive metal oxide layer of the first electrode E j .

Claim 4

A method of making a photoelectric conversion device in which a plurality n (where n is an integer larger than 2) of semiconductor elements U 1 to U n are sequentially formed side by side on a substrate having an insulating surface and connected in series one after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i and a second electrode F i on the non-single-crystal semiconductor laminate member Q i , the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 being connected via coupling portion K j to the first electrode E j , comprising te steps of: forming on the substrate sequentially arranged, spaced apart first electrodes E 1 to E n ; forming on the substrate, so as to cover the first electrodes E 1 to E n , a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction; forming (n-1) sequentially arranged grooves O 1 to O n-1 extending through the non-single-crystal semiconductor laminate layer by using a laser beam thereby to form n sequentially arranged non-single-crystal semiconductor laminate members Q 1 to Q n extending on the first electrodes E 1 to E n-1 ; following the formation of the grooves O 1 to O n-1 with a deburring or an etch using a gas or a liquid; forming a conductive layer which continuously extends on the non-single-crystal semiconductor laminate members Q 1 to Q n and into the grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 which are connected to the first electrodes E 1 to E n-1 through the grooves O 1 to O n-1 , respectively; and forming n sequentially arranged second electrodes F 1 to F n in the conductive layer, the second electrodes F 1 to F n being opposed to the first electrodes E 1 to E n through the non-single crystal semiconductor laminate members Q 1 to Q n , respectively, the second electrode F j+1 (j=1, 2, . . . (n-1)) being connected to the first electrode E j through the coupling portion K j .

Claim 5

A method of making a photoelectric conversion device in which a plurality n (where n is an integer larger than 2) of semiconductor elements U 1 to U n are sequentially formed side by side on a substrate having an insulating surface and connected in series one after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i and a second electrode F i on the non-single-crystal semiconductor laminate member Q i , the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 being connected via coupling portion K j to the first electrode E j , comprising te steps of: forming on the substrate sequentially arranged, spaced apart first electrodes E 1 to E n ; forming on the substrate, so as to cover the first electrodes E 1 to E n , a non-single-crystal semiconductor laminate layer having formed therein at least one semiconductor junction; forming (n-1) sequentially arranged grooves O 1 to O n-1 extending through the non-single-crystal semiconductor laminate layer by using a laser beam thereby to form n sequentially arranged non-single-crystal semiconductor laminate members Q 1 to Q n extending on the first electrodes E 1 to E n-1 ; following the formation of the grooves O 1 to O n-1 with a deburring or an etch using a gas or a liquid; forming a conductive layer which continuously extends on the non-single-crystal semiconductor laminate members Q 1 to Q n and into the grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 which are connected to the first electrodes E 1 to E n-1 through the grooves O 1 to O n-1 , respectively; and forming n sequentially arranged second electrodes F 1 to F n in the conductive layer, the second electrodes F 1 to F n being opposed to the first electrodes E 1 to E n through the non-single crystal semiconductor laminate members Q 1 to Q n , respectively, the second electrode F j+1 (j=1, 2, . . . (n-1)) being connected to the first electrode E j through the coupling portion K j .

Claim 12

A method of making a photoelectric conversion device according to claims 3 or 4, wherein the groove O j is formed to extend into the first electrode E j so that the coupling portion K j may be connected with the side of the first electrode E j which is exposed by the groove O j .

Claim 13

A method of making a photoelectric conversion device according to claims 3 or 4, wherein the groove O j is formed to extend into the first electrode E j with a smaller width than in the non-single-crystal semiconductor laminate member Q j so that the coupling portion K j may be connected with the top and side of the first electrode E j which are exposed by the groove O J .

Claim 14

A method of making a photoelectric conversion device according to claims 3 or 4, wherein the groove O j is formed to extend into the substrate through the first electrode E j with a greater width than in the first electrode E j so that the coupling portion K j may be connected with the side and bottom of the first electrode E j which are exposed by the groove O j .

Claim 15

A method of making a photoelectric conversion device according to claims 3 or 4, wherein the groove O j is formed to extend into the substrate through the first electrode E j with a width smaller than in the non-single-crystal semiconductor laminate member Q j but greater than in the first electrode E j so that the coupling portion K j may be connected with the top, side, and bottom of the first electrode E j which are exposed by the groove O j .

Claim 16

A method of making a photoelectric conversion device according to claims 1 or 3, wherein the formation of the grooves G 1 to G n-1 is carried out in air.

Claim 18

A method of making a photoelectric conversion device according to claims 1 or 3, wherein the formation of the grooves O 1 to O n-1 is carried out in air.