US4684436A
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US
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Method of simultaneously etching personality and select
Assignee: International Business Machines Corp
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Filing: 1986-10-29
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Granted: 1987-08-04
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Expires: 2006-10-29
Abstract
Abstract A method for performing differential etching of material by using electromagnetic radiation. Material having two predetermined regions is provided. A beam of electromagnetic radiation is generated. The energy intensity of predetermined areas within the beam of electromagnetic radiation is selectively varied so that both of the predetermined regions of the material are etched simultaneously and each of the predetermined regions is etched at a rate independent of the etching rate of the other of the predetermined regions. In an alternate embodiment, a substance having at least two materials is provided. A beam of electromagnetic radiation is generated. The energy intensity of predetermined areas within the beam of electromagnetic radiation is selectively varied so that the time required to etch one of the materials is substantially equal to the time required to etch any selected combination of the materials remaining.
Inventors
- 👤 Francis C. Burns
- 👤 Gary R. Carden
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:54
CPC Classifications
H; H10; H10W; H10W99/00; B; B23; B23K; B23K26/00; B23K26/02; B23K26/06; B23K26/064; B23K26/066; H10P; H10P34/00; H10P34/40; H10P34/42; H10W70/00; H10W70/01; H10W70/05; H05; H05K; H05K3/00; H05K3/0011; H05K3/0017
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
87 words
A method for performing differential etching of material by using electromagnetic radiation, the steps comprising: (a) generating a beam of electromagnetic radiation; (b) providing material to be selectively etched, said material having two predetermined regions; and (c) selectively varying the energy intensity of predetermined areas within said beam of electromagnetic radiation so that both of said predetermined regions of said material are etched simultaneously and each of said predetermined regions is etched at a rate independent of the etching rate of the other of said predetermined regions.
Claim 2
Independent Claim
87 words
A method for performing differential etching of material by using electromagnetic radiation, the steps comprising: (a) generating a beam of electromagnetic radiation; (b) providing material to be selectively etched, said material having two predetermined regions; and (c) selectively varying the energy intensity of predetermined areas within said beam of electromagnetic radiation so that both of said predetermined regions of said material are etched simultaneously and each of said predetermined regions is etched at a rate independent of the etching rate of the other of said predetermined regions.
Claim 3
Dependent Claim
24 words
The method in accordance with claim 1 wherein at least one of said regions of said material to be etched comprises an electrical conductor.
Claim 4
Dependent Claim
17 words
The method in accordance with claim 2 wherein said electrical conductor forms part of an electrical circuit.
Claim 5
Dependent Claim
14 words
The method in accordance with claim 1 wherein said material is an etchable polymer.
Claim 6
Dependent Claim
18 words
The method in accordance with claim 1 wherein said beam of electromagnetic radiation is generated by a laser.
Claim 7
Dependent Claim
26 words
The method in accordance with claim 1 wherein said energy intensity of predetermined areas with said beam is caused to vary by means of a mask.
Claim 8
Dependent Claim
32 words
The method in accordance with claim 6 wherein said mask comprises: (a) a first portion having a first predetermined reflectivity property; and (b) a second portion having a second predetermined reflectivity property.
Claim 9
Dependent Claim
23 words
The method in accordance with claim 7 wherein said mask further comprises: (c) a substantially transparent carrier having a third predetermined reflectivity property.
Claim 10
Independent Claim
83 words
A method for performing differential etching of a substance by using electromagnetic radiation, the steps comprising: (a) generating a beam of electromagnetic radiation; (b) providing a substance to be selectively etched, said substance being in operative relation to said beam of electromagnetic radiation, said substance comprising two materials, each of said materials having a different etch rate; and (c) selectively varying the energy intensity of predetermined areas within said beam of electromagnetic radiation so that each of said materials is etched substantially simultaneously.
Claim 11
Independent Claim
83 words
A method for performing differential etching of a substance by using electromagnetic radiation, the steps comprising: (a) generating a beam of electromagnetic radiation; (b) providing a substance to be selectively etched, said substance being in operative relation to said beam of electromagnetic radiation, said substance comprising two materials, each of said materials having a different etch rate; and (c) selectively varying the energy intensity of predetermined areas within said beam of electromagnetic radiation so that each of said materials is etched substantially simultaneously.
Claim 12
Dependent Claim
24 words
The method in accordance with claim 9 wherein at least one of said regions of said material to be etched comprises an electrical conductor.
Claim 13
Dependent Claim
17 words
The method in accordance with claim 10 wherein said electrical conductor forms part of an electrical circuit.
Claim 14
Dependent Claim
18 words
The method in accordance with claim 9 wherein at least one of said materials is an etchable polymer.
Claim 15
Dependent Claim
18 words
The method in accordance with claim 9 wherein at least one of said materials is an etchable semiconductor.
Claim 16
Dependent Claim
18 words
The method in accordance with claim 9 wherein said beam of electromagnetic radiation is generated by a laser.
Claim 17
Dependent Claim
26 words
The method in accordance with claim 9 wherein said energy intensity of predetermined areas with said beam is caused to vary by means of a mask.
Claim 18
Dependent Claim
32 words
The method in accordance with claim 15 wherein said mask comprises: (a) a first portion having a first predetermined reflectivity property; and (b) a second portion having a second predetermined reflectivity property.
Claim 19
Dependent Claim
23 words
The method in accordance with claim 16 wherein said mask further comprises: (c) a substantially transparent carrier having a third predetermined reflectivity property.
Claim 20
Independent Claim
81 words
A method for performing differential etching of a substance by using electromagnetic radiation, the steps comprising: (a) generating a beam of electromagnetic radiation; (b) providing a substance to be selectively etched, said substance comprising at least two materials; and (c) selectively varying the energy intensity of predetermined areas within said beam of electromagnetic radiation so that the time required to etch one of said materials is substantially equal to the time required to etch any selected combination of said materials remaining.
Claim 21
Independent Claim
81 words
A method for performing differential etching of a substance by using electromagnetic radiation, the steps comprising: (a) generating a beam of electromagnetic radiation; (b) providing a substance to be selectively etched, said substance comprising at least two materials; and (c) selectively varying the energy intensity of predetermined areas within said beam of electromagnetic radiation so that the time required to etch one of said materials is substantially equal to the time required to etch any selected combination of said materials remaining.
Claim 22
Dependent Claim
24 words
The method in accordance with claim 18 wherein at least one of said regions of said material to be etched comprises an electrical conductor.
Claim 23
Dependent Claim
13 words
The method in accordance with claim 19 wherein said electrical conductor comprises chromium.
Claim 24
Dependent Claim
13 words
The method in accordance with claim 20 wherein said electrical conductor comprises copper.
Claim 25
Dependent Claim
17 words
The method in accordance with claim 18 wherein said electrical conductor forms part of an electrical circuit.
Claim 26
Dependent Claim
18 words
The method in accordance with claim 18 wherein said beam of electromagnetic radiation is generated by a laser.
Claim 27
Dependent Claim
26 words
The method in accordance with claim 18 wherein said energy intensity of predetermined areas with said beam is caused to vary by means of a mask.
Claim 28
Dependent Claim
32 words
The method in accordance with claim 24 wherein said mask comprises: (a) a first portion having a first predetermined reflectivity property; and (b) a second portion having a second predetermined reflectivity property.
Claim 29
Dependent Claim
23 words
The method in accordance with claim 25 wherein said mask further comprises: (c) a substantially transparent carrier having a third predetermined reflectivity property.
Claim 30
Independent Claim
111 words
A method of making a mask for use in a photolithographic process, the steps comprising: (a) providing a substantially transparent carrier; (b) coating said carrier with a totally reflecting dielectric, said dielectric being resistant to high fluence at a predetermined operating wavelength; (c) applying, baking, exposing and developing a personality pattern in a first photoresist; (d) ion milling said exposed dielectric to said carrier; (e) stripping said first photoresist; (f) applying, baking, exposing and developing a select pattern in a second photoresist so that said dielectric in said select pattern is exposed; (g) ion milling said dielectric in said select pattern to a predetermined level; and (h) stripping said second photoresist.
Claim 31
Independent Claim
111 words
A method of making a mask for use in a photolithographic process, the steps comprising: (a) providing a substantially transparent carrier; (b) coating said carrier with a totally reflecting dielectric, said dielectric being resistant to high fluence at a predetermined operating wavelength; (c) applying, baking, exposing and developing a personality pattern in a first photoresist; (d) ion milling said exposed dielectric to said carrier; (e) stripping said first photoresist; (f) applying, baking, exposing and developing a select pattern in a second photoresist so that said dielectric in said select pattern is exposed; (g) ion milling said dielectric in said select pattern to a predetermined level; and (h) stripping said second photoresist.
Claim 32
Independent Claim
144 words
A method of making a mask for use in a photolithographic process, the steps comprising: (a) providing a substantially transparent carrier; (b) coatinq said carrier with a reflecting dielectric, said dielectric being resistant to high fluence at a predetermined operating wavelength; (c) applying, baking, exposing and developing a personality pattern in a first photoresist so that the exposed dielectric is the complement of said personality pattern; (d) ion milling said complement of said personality pattern to a predetermined level; (e) stripping said first photoresist; (f) applying, baking, exposing and developing a pattern representative of said personality pattern less a select portion thereof in a second photoresist; (g) ion milling said exposed dielectric in said select pattern and in said complement of said personality pattern until said dielectric is substantially completely removed from said complement of said personality pattern; and (h) stripping said second photoresist.
Claim 33
Independent Claim
144 words
A method of making a mask for use in a photolithographic process, the steps comprising: (a) providing a substantially transparent carrier; (b) coatinq said carrier with a reflecting dielectric, said dielectric being resistant to high fluence at a predetermined operating wavelength; (c) applying, baking, exposing and developing a personality pattern in a first photoresist so that the exposed dielectric is the complement of said personality pattern; (d) ion milling said complement of said personality pattern to a predetermined level; (e) stripping said first photoresist; (f) applying, baking, exposing and developing a pattern representative of said personality pattern less a select portion thereof in a second photoresist; (g) ion milling said exposed dielectric in said select pattern and in said complement of said personality pattern until said dielectric is substantially completely removed from said complement of said personality pattern; and (h) stripping said second photoresist.
Claim 34
Independent Claim
135 words
A method of making a mask for use in a photolithographic process, the steps comprising: (a) providing a substantially transparent carrier; (b) coating said carrier with three layers, the first of said layers being a dielectric adjacent to said carrier, said first layer having a partial transmission characteristic for a predetermined operating wavelength, and the third of said layers being a reflecting dielectric; (c) applying, baking, exposing and developing a personality pattern in a first photoresist; (d) ion milling said third layer, etching said second layer and ion etching said first layer to expose said carrier; (e) stripping said first photoresist; (f) applying, baking, exposing and developing a select pattern in a second photoresist; (g) ion milling said third layer and etching said second layer in said select pattern; and (h) stripping said second photoresist.
Claim 35
Independent Claim
135 words
A method of making a mask for use in a photolithographic process, the steps comprising: (a) providing a substantially transparent carrier; (b) coating said carrier with three layers, the first of said layers being a dielectric adjacent to said carrier, said first layer having a partial transmission characteristic for a predetermined operating wavelength, and the third of said layers being a reflecting dielectric; (c) applying, baking, exposing and developing a personality pattern in a first photoresist; (d) ion milling said third layer, etching said second layer and ion etching said first layer to expose said carrier; (e) stripping said first photoresist; (f) applying, baking, exposing and developing a select pattern in a second photoresist; (g) ion milling said third layer and etching said second layer in said select pattern; and (h) stripping said second photoresist.
Claim 36
Dependent Claim
18 words
The method of making a mask in accordance with claim 29 wherein said second layer comprises a metal.
Claim 37
Dependent Claim
18 words
The method of making a mask in accordance with claim 30 wherein said second layer metal comprises chromium.
Claim 38
Dependent Claim
18 words
The method of making a mask in accordance with claim 30 wherein said second layer metal comprises aluminum.
Claim 39
Dependent Claim
28 words
The method of making a mask in accordance with claim 29 wherein said third layer is a dielectric capable of reflecting substantially all radiation of a predetermined wavelength.
Claim 40
Dependent Claim
34 words
A mask comprising: (a) a first portion having a first predetermined reflectivity property; (b) a second portion having a second predetermined reflectivity property; and (c) a transparent carrier having a third predetermined reflectivity property.
Claim 41
Dependent Claim
34 words
A mask comprising: (a) a first portion having a first predetermined reflectivity property; (b) a second portion having a second predetermined reflectivity property; and (c) a transparent carrier having a third predetermined reflectivity property.
Claim 42
Independent Claim
88 words
A method for performing differential exposure of material by using electromagnetic radiation, the steps comprising: (a) generating a beam of electromagnetic radiation; (b) providing material to be selectively exposed, said material having two predetermined regions; and (c) selectively varying the energy intensity of predetermined areas within said beam of electromagnetic radiation so that both of said predetermined regions of said material are exposed simultaneously and each of said predetermined regions is exposed to a degree independent of the degree of exposure of the other of said predetermined regions.
Claim 43
Independent Claim
88 words
A method for performing differential exposure of material by using electromagnetic radiation, the steps comprising: (a) generating a beam of electromagnetic radiation; (b) providing material to be selectively exposed, said material having two predetermined regions; and (c) selectively varying the energy intensity of predetermined areas within said beam of electromagnetic radiation so that both of said predetermined regions of said material are exposed simultaneously and each of said predetermined regions is exposed to a degree independent of the degree of exposure of the other of said predetermined regions.
Claim 44
Dependent Claim
14 words
The method in accordance with claim 35 wherein said material comprises a photosensitive polymer.
Claim 45
Dependent Claim
24 words
The method in accordance with claim 35 wherein at least one of said regions of said material to be exposed comprises an etchable semiconductor.
Claim 46
Dependent Claim
23 words
The method in accordance with claim 18 wherein at least a portion of said substance to be selectively etched comprises layers of material.
Claim 47
Dependent Claim
35 words
The method in accordance with claim 38 wherein one of said layers of material comprises copper and two of said layers of material comprise chromium, wherein said chromium layers are interleaved with said copper layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-03 | 1991-02-02 | 1991-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-03 | 1995-02-02 | 1995-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-03 | 1999-02-02 | 1999-08-04 | $7700.00 | Window Closed / Lapsed |