US4683146A — Process for producing deposition films

Claim 1

Independent Claim 173 words

A photolytic process for producing a deposition film which comprises forming a gaseous atmosphere of at least one silicon hydride compound selected from the group consisting of (A) straight chain silicon hydrides represented by the general formula Si.sub.n H.sub.2n+2 wherein n is an integer of 5 or more; (B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride radical which are represented by the general formula Si.sub.m H.sub.2m wherein m is 3, 4, 5 or 6; and (C) branched chain silicon hydrides represented by the general formula Si.sub.p H.sub.q wherein p is an integer of 5 or more and q is an integer of 12 or more; in a chamber having a substrate, and exerting light energy on the atmosphere to excite and decompose the silicon hydride compound, thereby forming a silicon-containing film on the substrate, whereby the film forming may be carried out at a substrate temperature on the order of about 50° to 150° C. and without application of thermal energy to excite and decompose the compounds.

Claim 2

Dependent Claim 173 words

A photolytic process for producing a deposition film which comprises forming a gaseous atmosphere of at least one silicon hydride compound selected from the group consisting of (A) straight chain silicon hydrides represented by the general formula Si.sub.n H.sub.2n+2 wherein n is an integer of 5 or more; (B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride radical which are represented by the general formula Si.sub.m H.sub.2m wherein m is 3, 4, 5 or 6; and (C) branched chain silicon hydrides represented by the general formula Si.sub.p H.sub.q wherein p is an integer of 5 or more and q is an integer of 12 or more; in a chamber having a substrate, and exerting light energy on the atmosphere to excite and decompose the silicon hydride compound, thereby forming a silicon-containing film on the substrate, whereby the film forming may be carried out at a substrate temperature on the order of about 50° to 150° C. and without application of thermal energy to excite and decompose the compounds.

Claim 3

Dependent Claim 35 words

The process of claim 1, wherein the silicon hydride compound used is a straight chain silicon hydride represented by the general formula Si n H 2n+2 where n is an integer of 5 or more.

Claim 4

Dependent Claim 49 words

The process of claim 1, wherein the silicon hydride compound used in a cyclic silicon hydride unsubstituted or substituted by one or more linear or branched silicon hydride radicals which is represented by the general formula Si m H 2m , where m is 3, 4, 5, or 6.

Claim 5

Dependent Claim 45 words

The process of claim 1, wherein the silicon hydride compound used is a branched chain silicon hydride represented by the general formula Si p H q , where p is an integer of 5 or more and q is an integer of 12 or more.

Claim 6

Dependent Claim 26 words

The process of claim 1, wherein a compound containing an element of group III or V of the periodic table is introduced additionally into the chamber.

Claim 7

Dependent Claim 15 words

The process of claim 4, wherein a halogen compound is introduced additionally into the chamber.

Claim 8

Dependent Claim 29 words

The process of claim 6, wherein the halogen compound is selected from the group consisting of F 2 , Cl 2 , Br 2 , and I 2 .

Claim 9

Dependent Claim 28 words

The process of claim 5, wherein the element of group III of the periodic table is selected from the group consisting of B, Al, Ga, In, and Tl.

Claim 10

Dependent Claim 28 words

The process of claim 5, wherein the element of group V of the periodic table is selected from the group consisting of N, P, As, Sb, and Bi.

Claim 11

Dependent Claim 25 words

The process of claim 1, wherein the light energy is selected from the group consisting of ultraviolet rays, infrared rays, visible rays, x-rays, and γ-rays.

Claim 12

Dependent Claim 34 words

The process of claim 1, wherein the means of supplying the light energy is selected from the group consisting of mercury lamps, xenon lamps, carbon dioxide gas lasers, argon ion lasers, and excimer lasers.

Claim 13

Dependent Claim 261 words

A photolytic process for producing a multi-layer deposition film having at least a first undoped layer containing silicon atoms and a second doped layer in contact with said first layer, said second layer containing silicon atoms and atoms of a Group III or Group V element on a substrate which comprises: a. forming the first layer containing silicon atoms by forming a gaseous atmosphere of at least one silicon hydride compound selected from the group consisting of: (A) straight chain silicon hydrides represented by the general formula Si.sub.n H.sub.2n+2 wherein n is an integer of 4 or more; (B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride radical which are represented by the general formula Si.sub.m H.sub.2m wherein m is 3, 4, 5 or 6; and (C) branched chain silicon hydrides represented by the general formula Si.sub.p H.sub.q wherein p is an integer of 4 or more and l is an integer of 10 or more in a chamber housing the substrate and exerting light energy on the atmosphere to excite and decompose the silicon hydride compound; and b. forming the second layer containing silicon atoms and atoms of a Group III or Group V element by forming a gaseous atmosphere of (i) at least one silicon hydride compound selected from the group consisting of said (A), (B) or (C) and (ii) a compound containing atoms of a Group III or Group V element; in a chamber housing the substrate, and exerting light energy on the atmosphere to excite and decompose said compounds (i) and (ii).

Claim 14

Dependent Claim 261 words

A photolytic process for producing a multi-layer deposition film having at least a first undoped layer containing silicon atoms and a second doped layer in contact with said first layer, said second layer containing silicon atoms and atoms of a Group III or Group V element on a substrate which comprises: a. forming the first layer containing silicon atoms by forming a gaseous atmosphere of at least one silicon hydride compound selected from the group consisting of: (A) straight chain silicon hydrides represented by the general formula Si.sub.n H.sub.2n+2 wherein n is an integer of 4 or more; (B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride radical which are represented by the general formula Si.sub.m H.sub.2m wherein m is 3, 4, 5 or 6; and (C) branched chain silicon hydrides represented by the general formula Si.sub.p H.sub.q wherein p is an integer of 4 or more and l is an integer of 10 or more in a chamber housing the substrate and exerting light energy on the atmosphere to excite and decompose the silicon hydride compound; and b. forming the second layer containing silicon atoms and atoms of a Group III or Group V element by forming a gaseous atmosphere of (i) at least one silicon hydride compound selected from the group consisting of said (A), (B) or (C) and (ii) a compound containing atoms of a Group III or Group V element; in a chamber housing the substrate, and exerting light energy on the atmosphere to excite and decompose said compounds (i) and (ii).

Claim 15

Dependent Claim 35 words

The process of claim 12, wherein the silicon hydride compound used is a straight chain silicon hydride represented by the general formula Si n H 2n+2 where n is an integer of 4 or more.

Claim 16

Dependent Claim 49 words

The process of claim 12, wherein the silicon hydride compound used is a cyclic silicon hydride unsubstituted or substituted by one or more linear or branched silicon hydride radicals which are represented by the general formula Si m H 2m , where m is 3, 4, 5 or 6.

Claim 17

Dependent Claim 45 words

The process of claim 12, wherein the silicon hydride compound used is a branched chain silicon hydride represented by the general formula Si p H q , where p is an integer of 4 or more and q is an integer of 10 or more.

Claim 18

Dependent Claim 15 words

The process of claim 12, wherein a halogen compound is introduced additionally into the chamber.

Claim 19

Dependent Claim 29 words

The process of claim 16, wherein the halogen compound is selected from the group consisting of F 2 , Cl 2 , Br 2 , and I 2 .

Claim 20

Dependent Claim 28 words

The process of claim 12, wherein the element of Group III of the periodic table is selected from the group consisting of B, Al, Ga, In, and Tl.

Claim 21

Dependent Claim 28 words

The process of claim 12, wherein the element of group V of the periodic table is selected from the group consisting of N, P, As, Sb, and Bi.

Claim 22

Dependent Claim 25 words

The process of claim 12, wherein the light energy is selected from the group consisting of ultraviolet rays, infrared rays, visible rays, x-rays, and gamma-rays.

Claim 23

Dependent Claim 34 words

The process of claim 12, wherein the means of supplying the light energy is selected from the group consisting of mercury lamps, xenon lamps, carbon dioxide gas lasers, argon ion lasers, and excimer lasers.

Claim 24

Dependent Claim 20 words

A process according to claim 1 including maintaining the substrate temperature from about 50° to 150° C. during film formation.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1990-07-27	1991-01-26	1991-07-28	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1994-07-27	1995-01-26	1995-07-28	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1998-07-27	1999-01-26	1999-07-28	$7700.00	Window Closed / Lapsed

Process for producing deposition films

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