US4681773A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for simultaneous molecular beam deposition on a plurality of substrates
Assignee: Nokia Bell Labs
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Filing: 1986-04-04
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Granted: 1987-07-21
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Expires: 2006-04-04
Abstract
Abstract Apparatus is described which is especially well suited for simultaneous molecular beam epitaxy of materials, such as silicon, on a plurality of substrates.
Inventors
- 👤 John C. Bean
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:30
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/56; C23C14/568; C23C14/50; C23C14/505; C30; C30B; C30B25/00; C30B25/02; C30B25/12; Y; Y10; Y10S; Y10S414/00; Y10S414/135; Y10S414/139
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
172 words
Apparatus for molecular beam deposition of a semiconductor material simultaneously on a plurality of substrates; said apparatus comprising: an evacuable growth chamber and means for maintaining a pressure less than approximately 10 -10 Torr in said evacuable growth chamber, a molecular beam source disposed inside said evacuable growth chamber and designed for generating a molecular beam directed to a growth position inside said evacuable growth chamber, a platen disposed at said growth position and designed for mounting a plurality of substrates essentially equidistant from a center point of said platen, means for rotating said platen about an axis which comprises said center point and which is positioned to provide for a line-of-sight path between said molecular beam source and said growth position; said molecular beam source being spaced from said axis a distance which is greater than the distance between said substrates and said center point, and said platen being spaced from said molecular beam source a distance which is greater than the distance between said molecular beam source and said axis.
Claim 2
Dependent Claim
172 words
Apparatus for molecular beam deposition of a semiconductor material simultaneously on a plurality of substrates; said apparatus comprising: an evacuable growth chamber and means for maintaining a pressure less than approximately 10 -10 Torr in said evacuable growth chamber, a molecular beam source disposed inside said evacuable growth chamber and designed for generating a molecular beam directed to a growth position inside said evacuable growth chamber, a platen disposed at said growth position and designed for mounting a plurality of substrates essentially equidistant from a center point of said platen, means for rotating said platen about an axis which comprises said center point and which is positioned to provide for a line-of-sight path between said molecular beam source and said growth position; said molecular beam source being spaced from said axis a distance which is greater than the distance between said substrates and said center point, and said platen being spaced from said molecular beam source a distance which is greater than the distance between said molecular beam source and said axis.
Claim 3
Dependent Claim
20 words
Apparatus of claim 1, further comprising an analytical chamber and a valve intermediate said analytical chamber and said growth chamber.
Claim 4
Dependent Claim
19 words
Apparatus of claim 2, further comprising means for transporting said platen between said analytical chamber and said growth chamber.
Claim 5
Dependent Claim
11 words
Apparatus of claim 1, further comprising first and second loading/unloading chambers.
Claim 6
Dependent Claim
9 words
Apparatus of claim 1, said platen being essentially flat.
Claim 7
Dependent Claim
9 words
Apparatus of claim 1, further comprising an ion source.
Claim 8
Dependent Claim
12 words
Apparatus of claim 6, said ion source comprising a field emission source.
Claim 9
Dependent Claim
20 words
Apparatus of claim 1, said molecular beam source being designed to generate said molecular beam in an essentially vertical direction.
Claim 10
Dependent Claim
18 words
Apparatus of claim 8, further comprising electron beam or ion beam heating means for said molecular beam source.
Claim 11
Dependent Claim
146 words
Method for molecular beam deposition of a semiconductor material simultaneously on a plurality of substrates; said method comprising: maintaining a pressure less than approximately 10 -10 Torr in an evacuable growth chamber, generating a molecular beam directed to a growth position inside said evacuable growth chamber, rotating a platen which is disposed at said growth position and on which a plurality of substrates are mounted essentially equidistant from a center point of said platen, rotation being about an axis which comprises said center point and which is positioned to provide for a line-of-sight path for said molecular beam; the source of said molecular beam being spaced from said axis a distance which is greater than the distance between said substrates and said center point, and said platen being spaced from said source a distance which is greater than the distance between said source and said axis.
Claim 12
Dependent Claim
146 words
Method for molecular beam deposition of a semiconductor material simultaneously on a plurality of substrates; said method comprising: maintaining a pressure less than approximately 10 -10 Torr in an evacuable growth chamber, generating a molecular beam directed to a growth position inside said evacuable growth chamber, rotating a platen which is disposed at said growth position and on which a plurality of substrates are mounted essentially equidistant from a center point of said platen, rotation being about an axis which comprises said center point and which is positioned to provide for a line-of-sight path for said molecular beam; the source of said molecular beam being spaced from said axis a distance which is greater than the distance between said substrates and said center point, and said platen being spaced from said source a distance which is greater than the distance between said source and said axis.
References Cited (Backward Citations)
SU117359A1
Cited
US3636916A
Cited
US3662708A
Cited
US3785853A
Cited
US3928092A
Cited
US4121537A
Cited
US4137865A
Cited
US4226208A
Cited
US4201152A
Cited
US4256780A
Cited
US4430183A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-20 | 1991-01-19 | 1991-07-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-20 | 1995-01-19 | 1995-07-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-20 | 1999-01-19 | 1999-07-21 | $7700.00 | Window Closed / Lapsed |