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US4676864A
Expired / Lapsed
US
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Bonding method of semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1986-05-14
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Granted: 1987-06-30
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Expires: 2006-05-14
Abstract
Abstract A bonding method of semiconductor device by using a film carrier; A heat-resistive insulating layer is deposited all over the surface of a dummy wafer on which a photo-resist film having a predetermined pattern is previously formed; The photo-resist film is removed together with the heat-resistive insulating layer for forming openings; Bumps are formed on the openings by plating using the heat-resistive insulating layer as a mask; After transferring the bumps to inner leads, the bumps of the inner leads are bonded to bonding pads of the semiconductor element.
Inventors
- 👤 Yukio Maeda
- 👤 Yoshifumi Kitayama
- 👤 Shuichi Murakami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:56
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/251; H10W72/90; H10W72/951; H10W72/952; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
105 words
Bonding method of semiconductor device comprising the steps of forming a photo-resist film having a predetermined pattern on a conductive layer formed on a dummy wafer, depositing a heat-resistive insulating layer all over the surface of said dummy wafer, removing said photo-resist film together with said heat-resistive insulating layer deposited thereon, thereby forming openings, forming bumps on said openings by plating using said heat-resistive insulating layer as a mask and using said conductive layer as a plating electrode, transferring said bumps to inner leads from said dummy wafer, and thermo-compression bonding the said bumps of the inner leads to bonding pads of the semiconductor element.
Claim 2
Dependent Claim
105 words
Bonding method of semiconductor device comprising the steps of forming a photo-resist film having a predetermined pattern on a conductive layer formed on a dummy wafer, depositing a heat-resistive insulating layer all over the surface of said dummy wafer, removing said photo-resist film together with said heat-resistive insulating layer deposited thereon, thereby forming openings, forming bumps on said openings by plating using said heat-resistive insulating layer as a mask and using said conductive layer as a plating electrode, transferring said bumps to inner leads from said dummy wafer, and thermo-compression bonding the said bumps of the inner leads to bonding pads of the semiconductor element.
Claim 3
Dependent Claim
25 words
Bonding method of semiconductor device in accordance with claim 1, wherein said depositing of the heat-resistive insulating layer is carried out by vacuum evaporation method.
Claim 4
Dependent Claim
24 words
Bonding method of semiconductor device in accordance with claim 1, wherein said depositing of the heat-resistive insulating layer is carried out by sputtering method.
Claim 5
Dependent Claim
23 words
Bonding method of semiconductor device in accordance with claim 1, wherein said removing of the photo-resist film is carried out by solvent cleaning.
Claim 6
Dependent Claim
22 words
Bonding method of semiconductor device in accordance with claim 1, wherein said removing of photo-resist film is carried out by alkaline treating.
Claim 7
Dependent Claim
25 words
Bonding method of semiconductor device in accordance with claim 1, wherein said removing of photo-resist film is carried out by treating by nitric acid, fuming.
Claim 8
Dependent Claim
23 words
Bonding method of semiconductor device in accordance whith claim 1, wherein said removing of photo-resist film is carried out by treating by heating.
Claim 9
Dependent Claim
26 words
Bonding method of semiconductor device in accordance with claim 1, wherein said dummy wafer comprises a heat-resistive insulating substrate having a thin film of platinum thereon.
Claim 10
Dependent Claim
28 words
Bonding method of semiconductor device in accordance with claim 1, wherein said conductive layer conssists of a titanium film and a platinum film formed on said titanium film.
Claim 11
Dependent Claim
26 words
Bonding method of semiconductor device in accordance with claim 1, further comprises step of treating said conductive layer by surface active agent before forming the bumps.
Claim 12
Dependent Claim
18 words
Bonding method of semiconductor device in accordance with claim 10, wherein said surface active agent is cationic surfactant.
Claim 13
Dependent Claim
16 words
Bonding method of semiconductor device in accordance with claim 1, wherein said bumps consist of gold.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-29 | 1990-12-29 | 1991-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-29 | 1994-12-29 | 1995-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-29 | 1998-12-29 | 1999-06-30 | $7700.00 | Window Closed / Lapsed |