Abstract A surface-emitting, light emitting device has a columnar active region of one direct bandgap semiconductor and an adjacent confining region of higher bandgap semiconductor. Contacts are made to the active and confining regions and a window is formed in the device in vertical alignment with the active region to permit light emission from the device. The semiconductors are doped to establish a pn junction within a carrier diffusion length of the heterojunction between the active and confining regions, the pn junction extending the length of the active region. In use, laser light is emitted along the axis of the columnar active region in response to current passing across the pn junction. The confining region is epitaxially grown with a compositional and refractive index periodicity causing Bragg distributed feedback (DFB) laser operation.
In a distributed feedback laser comprising an active region of a direct bandgap semiconductor material, a confining region of a higher bandgap semiconductor material adjacent the active region to form a heterojunction between the active and confining regions, and first and second contacts formed respectively on said active and confining regions, the confining region having a series of layers of changing composition and refractive index, the series of layers being epitaxially related to one another and to the active region, with the layers being located at least partly within a region of wave propagation of the laser so that the layers function to provide Bragg distributed optical feedback.
Claim 2
Dependent Claim
108 words
In a distributed feedback laser comprising an active region of a direct bandgap semiconductor material, a confining region of a higher bandgap semiconductor material adjacent the active region to form a heterojunction between the active and confining regions, and first and second contacts formed respectively on said active and confining regions, the confining region having a series of layers of changing composition and refractive index, the series of layers being epitaxially related to one another and to the active region, with the layers being located at least partly within a region of wave propagation of the laser so that the layers function to provide Bragg distributed optical feedback.
Claim 3
Dependent Claim
41 words
A surface-emitting laser as claimed in claim 1 in which the layers of said confining region are formed of group III-V material containing at least two group III elements wherein the content ratio of the elements changes from layer to layer.
Claim 4
Dependent Claim
33 words
A surface-emitting laser as claimed in claim 1 in which the series of layers of said confining region has a compositional periodicity of optical thickness λ/2 where λ is the device output wavelength.
Claim 5
Dependent Claim
41 words
A surface emitting laser as claimed in claim 1 in which the active region is columnar, the confining region extends around at least a part of the active region and the laser emits along the axis of the columnar active region.