Patent US4673969A successfully refreshed from Google Patents.
US4673969A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device
Assignee: Toshiba Corp
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Filing: 1985-12-30
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Granted: 1987-06-16
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Expires: 2005-12-30
Abstract
Abstract A semiconductor device having a pair of wiring layers connected in parallel with each other in which a first wiring layer is formed over a semiconductor substrate through a insulation layer. The first wiring layer is made of poly-Si and has relatively high resistivity. Therefore a second wiring layer is formed over the first wiring layer through an insulation layer. A portion of the second wiring layer has low conductivity and is parallel connected to the first wiring layer in order to reduce the resistivity of the wiring layer. Another portion of the second wiring layer has low conductivity and is used as resistive means.
Inventors
- 👤 Shoji Ariizumi
- 👤 Makoto Segawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:42
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10B; H10B10/00; H10B10/15; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10W20/40; H10W20/41; H10W20/435; Y; Y10; Y10S; Y10S257/00; Y10S257/927
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
127 words
A semiconductor device comprising: a plurality of semiconductor elements having at least one PN junction and formed on a substrate; a first insulation layer formed on the substrate including a gate insulation layer and a field insulation layer, said field insulation layer having a greater thickness than said gate insulation layer; a first conductive layer formed on the first insulation layer; and a second insulation layer formed on the first conductive layer; a second conductive layer formed on the second insulation layer and formed narrower than the first conductive layer and made of metal silicide layer having high melting point, said second conductive layer parallel connected on the field insulating layer to the first conductive layer in order to reduce the resistivity of the first conductive layer.
Claim 2
Dependent Claim
127 words
A semiconductor device comprising: a plurality of semiconductor elements having at least one PN junction and formed on a substrate; a first insulation layer formed on the substrate including a gate insulation layer and a field insulation layer, said field insulation layer having a greater thickness than said gate insulation layer; a first conductive layer formed on the first insulation layer; and a second insulation layer formed on the first conductive layer; a second conductive layer formed on the second insulation layer and formed narrower than the first conductive layer and made of metal silicide layer having high melting point, said second conductive layer parallel connected on the field insulating layer to the first conductive layer in order to reduce the resistivity of the first conductive layer.
Claim 3
Dependent Claim
166 words
A semiconductor device comprising a plurality of semiconductor elements having at least one PN junction and formed on a substrate, comprising: a first insulation layer formed on the substrate including a gate insulation layer and a field insulation layer, said field insulation layer having a greater thickness than said gate insulation layer; a first conductive layer formed on the first insulation layer; a second insulation layer formed on the first conductive layer; and a second conductive layer formed on the second insulation layer; wherein the second conductive layer includes one region having high conductivity and an other region having low conductivity, and the one region is parallel connected to the first conductive layer through a plurality of contact holes on the field insulation layer and is formed narrower than the first conductive layer, and the other region is used as a resistive means and wherein the one region is made of metal silicide having a high melting point and the other region is made of poly-Si.
Claim 4
Dependent Claim
166 words
A semiconductor device comprising a plurality of semiconductor elements having at least one PN junction and formed on a substrate, comprising: a first insulation layer formed on the substrate including a gate insulation layer and a field insulation layer, said field insulation layer having a greater thickness than said gate insulation layer; a first conductive layer formed on the first insulation layer; a second insulation layer formed on the first conductive layer; and a second conductive layer formed on the second insulation layer; wherein the second conductive layer includes one region having high conductivity and an other region having low conductivity, and the one region is parallel connected to the first conductive layer through a plurality of contact holes on the field insulation layer and is formed narrower than the first conductive layer, and the other region is used as a resistive means and wherein the one region is made of metal silicide having a high melting point and the other region is made of poly-Si.
Claim 5
Dependent Claim
190 words
A semiconductor device comprising: a semiconductor substrate having one conductivity type; a plurality of regions having another conductivity type formed in the substrate, wherein the regions operate as source and drain regions of MOS transistors; a first insulation layer formed on the substrate including a gate insulation layer and a field insulation layer, said field insulation layer having a greater thickness than said gate insulation layer; a first conductive layer formed on the first insulation layer; a second insulation layer formed on the first conductive layer and having substantially uniform thickness; and a second conductive layer formed on the first conductive layer and formed narrower than the first conductive layer, and including a high conductivity region and a low conductivity region; wherein the high conductivity region is used as a wiring layer and is parallel connected on the field insulation layer to the first conductive layer, and the low conductivity region is used as a resistor and connected to an electrode of a MOS transistor and wherein the high conductivity region is made of metal silicide having a high melting point and the lower conductive region is made of poly-Si.
Claim 6
Dependent Claim
190 words
A semiconductor device comprising: a semiconductor substrate having one conductivity type; a plurality of regions having another conductivity type formed in the substrate, wherein the regions operate as source and drain regions of MOS transistors; a first insulation layer formed on the substrate including a gate insulation layer and a field insulation layer, said field insulation layer having a greater thickness than said gate insulation layer; a first conductive layer formed on the first insulation layer; a second insulation layer formed on the first conductive layer and having substantially uniform thickness; and a second conductive layer formed on the first conductive layer and formed narrower than the first conductive layer, and including a high conductivity region and a low conductivity region; wherein the high conductivity region is used as a wiring layer and is parallel connected on the field insulation layer to the first conductive layer, and the low conductivity region is used as a resistor and connected to an electrode of a MOS transistor and wherein the high conductivity region is made of metal silicide having a high melting point and the lower conductive region is made of poly-Si.
Claim 7
Dependent Claim
155 words
A semiconductor device including a plurality of MOS transistors formed on a substrate, comprising: a first insulation layer formed on the substrate including gate insulation layers of the MOS transistors and a field insulation layer, said field insulation layer having a greater thickness than said gate insulation layer; a first conductive layer made of poly-Si formed on the first insulation layer and operating as gate electrodes of the MOS transistors; a second insulation layer formed on the first conductive layer; and a second conductive layer formed of poly-Si formed on the second insulation layer; wherein the second conductive layer includes one region having high conductivity and an other region having low conductivity, and the one region is parallel connected to the first conductive layer directly through at least three contact holes in the second insulation layer and is formed narrower than the first conductive layer, and the other region is used as a resistive means.
Claim 8
Dependent Claim
155 words
A semiconductor device including a plurality of MOS transistors formed on a substrate, comprising: a first insulation layer formed on the substrate including gate insulation layers of the MOS transistors and a field insulation layer, said field insulation layer having a greater thickness than said gate insulation layer; a first conductive layer made of poly-Si formed on the first insulation layer and operating as gate electrodes of the MOS transistors; a second insulation layer formed on the first conductive layer; and a second conductive layer formed of poly-Si formed on the second insulation layer; wherein the second conductive layer includes one region having high conductivity and an other region having low conductivity, and the one region is parallel connected to the first conductive layer directly through at least three contact holes in the second insulation layer and is formed narrower than the first conductive layer, and the other region is used as a resistive means.
Claim 9
Dependent Claim
18 words
A semiconductor device according to claim 4, wherein the first and second conductive layers are made of poly-Si.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-15 | 1990-12-15 | 1991-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-15 | 1994-12-15 | 1995-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-15 | 1998-12-15 | 1999-06-16 | $7700.00 | Window Closed / Lapsed |