US4673958A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic microwave diodes
Assignee: Texas Instruments Inc
•
Filing: 1985-01-31
•
Granted: 1987-06-16
•
Expires: 2005-01-31
Abstract
Abstract Two-terminal active devices, such as IMPATT and Gunn diodes, are combined with passive devices in a monolithic form using a plated metal heat sink to support the active elements and a coated-on dielectric to support the passive elements. Impedance-matching circuitry is preferably placed very close to (or partially overlapping) the active device, thereby eliminating detrimental device-to-circuit transition losses.
Inventors
- 👤 Burhan Bayraktaroglu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:38
CPC Classifications
H; H10; H10W; H10W72/00; H10D; H10D86/00; H10D86/80; H10W44/00; H10W44/20; H10W44/203; H10W44/216; H10W44/226; H10W44/234
Claims Analysis
Total Claims: 88
Claim 1
Independent Claim
53 words
A microwave device comprising: a metal heat sink: at least one semiconductor active element located on said metal heat sink: a planar coated dielectric layer overlying said semiconductor active device element and said heat sink, said dielectric layer containing at least one via hole above and extending down to said active element; and
Claim 2
Dependent Claim
53 words
A microwave device comprising: a metal heat sink: at least one semiconductor active element located on said metal heat sink: a planar coated dielectric layer overlying said semiconductor active device element and said heat sink, said dielectric layer containing at least one via hole above and extending down to said active element; and
Claim 3
Dependent Claim
47 words
a thin film metallization pattern on said dielectric layer, said thin film metallization pattern including a portion in said via hole and contacting said active element and including a portion forming a segment of a transmission line in conjunction with said metal heat sink and said dielectric.
Claim 4
Dependent Claim
47 words
a thin film metallization pattern on said dielectric layer, said thin film metallization pattern including a portion in said via hole and contacting said active element and including a portion forming a segment of a transmission line in conjunction with said metal heat sink and said dielectric.
Claim 5
Dependent Claim
124 words
A microwave device comprising: a metal heat sink; a plurality of semiconductor active elements located on said metal heat sink; a planar coated dielectric layer overlying said semiconductor active device elements and said heat sink, said dielectric layer containing a plurality of via holes above and extending down to said active elements, and said dielectric layer laterally separating said semiconductor active elements so that said active elements are not within a common continuous body of semiconductor material; and a thin film metallization pattern on said dielectric layer, said thin film metallization pattern including portion in said via holes and contacting said active elements and including a portion forming a segment of a transmission line in conjunction with said metal heat sink and said dielectric.
Claim 6
Dependent Claim
124 words
A microwave device comprising: a metal heat sink; a plurality of semiconductor active elements located on said metal heat sink; a planar coated dielectric layer overlying said semiconductor active device elements and said heat sink, said dielectric layer containing a plurality of via holes above and extending down to said active elements, and said dielectric layer laterally separating said semiconductor active elements so that said active elements are not within a common continuous body of semiconductor material; and a thin film metallization pattern on said dielectric layer, said thin film metallization pattern including portion in said via holes and contacting said active elements and including a portion forming a segment of a transmission line in conjunction with said metal heat sink and said dielectric.
Claim 7
Dependent Claim
99 words
A microwave device comprising: a metal heat sink; at least one semiconductor active element located on said metal heat sink; an planar organic dielectric layer overlying said semiconductor active device element and said heat sink, said dielectric layer containing at least one via hole above and extending down to said active element; and a thin film metallization pattern on said dielectric layer, said thin film metallization pattern including a portion in said via and contacting said active element and including a portion forming a segment of a transmission line in conjunction with said metal heat sink and said dielectric.
Claim 8
Dependent Claim
99 words
A microwave device comprising: a metal heat sink; at least one semiconductor active element located on said metal heat sink; an planar organic dielectric layer overlying said semiconductor active device element and said heat sink, said dielectric layer containing at least one via hole above and extending down to said active element; and a thin film metallization pattern on said dielectric layer, said thin film metallization pattern including a portion in said via and contacting said active element and including a portion forming a segment of a transmission line in conjunction with said metal heat sink and said dielectric.
Claim 9
Dependent Claim
120 words
A microwave device comprising: a metal heat sink; at least one semiconductor active element located on said metal heat sink; first and second planar layers of coated dielectric overlying said semiconductor active device element and said heat sink, said first layer of dielectric containing at least one via hole above and extending down to said active element; and thin film metallization including portions on said second dielectric layer and on portions of said first dielectric layer under said second dielectric layer, said thin film metallization pattern including a portion in said via hole and contacting said active element and including a portion forming a segment of a transmission line in conjunction with said metal heat sink and said dielectric layers.
Claim 10
Dependent Claim
120 words
A microwave device comprising: a metal heat sink; at least one semiconductor active element located on said metal heat sink; first and second planar layers of coated dielectric overlying said semiconductor active device element and said heat sink, said first layer of dielectric containing at least one via hole above and extending down to said active element; and thin film metallization including portions on said second dielectric layer and on portions of said first dielectric layer under said second dielectric layer, said thin film metallization pattern including a portion in said via hole and contacting said active element and including a portion forming a segment of a transmission line in conjunction with said metal heat sink and said dielectric layers.
Claim 11
Dependent Claim
87 words
A microwave device comprising: a semiconductor microwave diode with a first heavily-doped semiconductor region directly mounted on a metal heat sink, said heat sink also electrical ground; a planar layer of dielectric on said heat sink and overlying said diode; at least one bond pad on said layer to which a wire from an external circuit element may be connected; and thin film metallization on said layer connecting the second heavily-doped semiconductor region of said diode through a via hole in said layer to said bond pad.
Claim 12
Dependent Claim
87 words
A microwave device comprising: a semiconductor microwave diode with a first heavily-doped semiconductor region directly mounted on a metal heat sink, said heat sink also electrical ground; a planar layer of dielectric on said heat sink and overlying said diode; at least one bond pad on said layer to which a wire from an external circuit element may be connected; and thin film metallization on said layer connecting the second heavily-doped semiconductor region of said diode through a via hole in said layer to said bond pad.
Claim 13
Dependent Claim
188 words
A voltage-controlled oscillator comprising: a metal heatsink; a plurality of semiconductor portions located on said heatsink and mutually separated; a coated dielectric encapsulating said semiconductor portions on said heat sink; thin film metallization on said dielectric, said metallization making electrical connection to said semiconductor portions through vias, said metallization including means for connecting a first bias voltage to first ones of said semiconductor portions and a second bias voltage to second ones of said semiconductor portions; coupling capacitor means for rf-connectng sand dc-isolating said first ones of said semiconductor regions from said second ones of said regions; and transmission line segments and reactive elements formed with conductors being portions of said metallization, ground being said heat sink and insulation being said dielectric, said transmission line segments and reactive elements providing connections to and impedance matching for said second regions; whereby said first ones of said regions may be biased to operate as varactors and said second ones of said regions biased to operate as IMPATTs, so that the oscillation frequency of said second regions is at least partially determined by the bias voltage applied to said first regions.
Claim 14
Dependent Claim
188 words
A voltage-controlled oscillator comprising: a metal heatsink; a plurality of semiconductor portions located on said heatsink and mutually separated; a coated dielectric encapsulating said semiconductor portions on said heat sink; thin film metallization on said dielectric, said metallization making electrical connection to said semiconductor portions through vias, said metallization including means for connecting a first bias voltage to first ones of said semiconductor portions and a second bias voltage to second ones of said semiconductor portions; coupling capacitor means for rf-connectng sand dc-isolating said first ones of said semiconductor regions from said second ones of said regions; and transmission line segments and reactive elements formed with conductors being portions of said metallization, ground being said heat sink and insulation being said dielectric, said transmission line segments and reactive elements providing connections to and impedance matching for said second regions; whereby said first ones of said regions may be biased to operate as varactors and said second ones of said regions biased to operate as IMPATTs, so that the oscillation frequency of said second regions is at least partially determined by the bias voltage applied to said first regions.
Claim 15
Dependent Claim
174 words
A microwave device comprising: a metal heat sink; at least one semiconductor active element located on said metal heat sink; first, second and third layers of coated dielectric overlying said semiconductor active device element, said first layer of dielectric containing at lest one via hole above said active element; thin film metallization on said dielectric layers; said thin film metallization defining first capacitor plate on said first dielectric layer with second capacitor plates being said heat sink and capacitor insulator being said first dielectric layer, interconnects on said second dielectric layer, and bond pad areas on said third dielectric layer, said bond pad areas being connected by transmission line segments and reactive elements formed with conductors being portions of said metallization, ground being said heat sink and insulation being one of the group consisting of said first dielectric layer, said first and second dielectric layers and said first, second and third dielectric layers, said transmission line segments and reactive elements providing connections through said via hole to and impedance matching for said active elements.
Claim 16
Dependent Claim
174 words
A microwave device comprising: a metal heat sink; at least one semiconductor active element located on said metal heat sink; first, second and third layers of coated dielectric overlying said semiconductor active device element, said first layer of dielectric containing at lest one via hole above said active element; thin film metallization on said dielectric layers; said thin film metallization defining first capacitor plate on said first dielectric layer with second capacitor plates being said heat sink and capacitor insulator being said first dielectric layer, interconnects on said second dielectric layer, and bond pad areas on said third dielectric layer, said bond pad areas being connected by transmission line segments and reactive elements formed with conductors being portions of said metallization, ground being said heat sink and insulation being one of the group consisting of said first dielectric layer, said first and second dielectric layers and said first, second and third dielectric layers, said transmission line segments and reactive elements providing connections through said via hole to and impedance matching for said active elements.
Claim 17
Dependent Claim
10 words
The device of claim 1, wherein said heatsink comprises gold.
Claim 18
Dependent Claim
10 words
The device of claim 2, wherein said heatsink comprises gold.
Claim 19
Dependent Claim
10 words
The device of claim 3, wherein said heatsink compirses gold.
Claim 20
Dependent Claim
10 words
The device of claim 4, wherein said heatsink comprises gold.
Claim 21
Dependent Claim
10 words
The device of claim 5, wherein said heatsink comprises gold.
Claim 22
Dependent Claim
10 words
The device of claim 6, wherein said heatsink comprises gold.
Claim 23
Dependent Claim
10 words
The device of claim 7, wherein said heatsink comprises gold.
Claim 24
Dependent Claim
14 words
The device of claim 1, further comprising thin-film resistors fabricated on said coated dielectric.
Claim 25
Dependent Claim
14 words
The device of claim 2, further comprising thin-film resistors fabricated on said coated dielectric.
Claim 26
Dependent Claim
14 words
The device of claim 3, further comprising thin-film resistors fabricated on said coated dielectric.
Claim 27
Dependent Claim
14 words
The device of claim 4, further comprising thin-film resistors fabricated on said coated dielectric.
Claim 28
Dependent Claim
14 words
The device of claim 5, further comprising thin-film resistors fabricated on said coated dielectric.
Claim 29
Dependent Claim
14 words
The device of claim 6, further comprising thin-film resistors fabricated on said coated dielectric.
Claim 30
Dependent Claim
14 words
The device of claim 7, further comprising thin-film resistors fabricated on said coated dielectric.
Claim 31
Dependent Claim
29 words
The device of claim 4, further comprising first-level interconnects on said first dielectric layer, said first-level interconnects being connected to metallization on said second dielectric layer through via holes.
Claim 32
Dependent Claim
28 words
The device of claim 1, further said thin film metallization includes impedance-matching network elements configured to provide an output impedance higher than the impedance of said active elements.
Claim 33
Dependent Claim
14 words
The device of claim 1, wherein said thin film metallization includes power-combining network elements.
Claim 34
Dependent Claim
28 words
The device of claim 2, wherein said thin film metallization includes impedance-matching network elements configured to provide an output impedance higher than the impedance of said active elements.
Claim 35
Dependent Claim
14 words
The device of claim 2, wherein said thin film metallization includes power-combining network elements.
Claim 36
Dependent Claim
28 words
The device of claim 3, wherein said thin film metallization includes impedance-matching network elements configured to provide an output impedance higher than the impedance of said active elements.
Claim 37
Dependent Claim
14 words
The device of claim 3, wherein said thin film metallization includes power-combining network elements.
Claim 38
Dependent Claim
28 words
The device of claim 4, wherein said thin film metallization includes impedance-matching network elements configured to provide an output impedance higher than the impedance of said active elements.
Claim 39
Dependent Claim
14 words
The device of claim 4, wherein said thin film metallization includes power-combining network elements.
Claim 40
Dependent Claim
28 words
The device of claim 5, wherein said thin film metallization includes impedance-matching network elements configured to provide an outoput impedance higher than the impedance of said active elements.
Claim 41
Dependent Claim
14 words
The device of claim 5, wherein said thin film metallization includes power-combining network elements.
Claim 42
Dependent Claim
28 words
The device of claim 6, wherein said thin film metallization includes impedance-matching network elements configured to provide an output impedance higher than the impedance of said active elements.
Claim 43
Dependent Claim
14 words
The device of claim 6, wherein said thin film metallization includes power-combining network elements.
Claim 44
Dependent Claim
28 words
The device of claim 7, wherein said thin film metallization includes impedance-matching network elements configured to provide an output impedance higher than the impedance of said active elements.
Claim 45
Dependent Claim
14 words
The device of claim 7, wherein said thin film metallization includes power-combining network elements.
Claim 46
Dependent Claim
22 words
The device of claim 4, comprising capacitors fabricated on said first dielectric layer and other passive elements on said second dielectric layer.
Claim 47
Dependent Claim
15 words
The device of claim 4, wherein at least one of said dielectric layers comprises polyimide.
Claim 48
Dependent Claim
22 words
The device of claim 3, wherein said dielectric layer comprises a material selected from the group consisting of polyimide, polystyrene, and polyfluorocarbons.
Claim 49
Dependent Claim
22 words
The device of claim 1, further comprising an encapsulation layer above said thin film metallization except at locations of said bond pads.
Claim 50
Dependent Claim
22 words
The device of claim 2, further comprising an encapsulation layer above said thin film metallization except at locations of said bond pads.
Claim 51
Dependent Claim
22 words
The device of claim 3, further comprising an encapsulation layer above said thin film metallization except at locations of said bond pads.
Claim 52
Dependent Claim
22 words
The device of claim 4, further comprising an encapsulation layer above said thin film metallization except at locations of said bond pads.
Claim 53
Dependent Claim
22 words
The device of claim 5, further comprising an encapsulation layer above said thin film metallization except at locations of said bond pads.
Claim 54
Dependent Claim
22 words
The device of claim 6, further comprising an encapsulation layer above said thin film metallization except at locations of said bond pads.
Claim 55
Dependent Claim
22 words
The device of claim 7, further comprising an encapsulation layer above said thin film metallization except at locations of said bond pads.
Claim 56
Dependent Claim
34 words
The device of claim 4, further comprising an intermediate dielectric layer between said first and second dielectric layers, said intermediate layer comprising a different material than that of said first and second dielectric layers.
Claim 57
Dependent Claim
14 words
The device of claim 4, wherein said first dielectric layer comprises a fluorocarbon polymer.
Claim 58
Dependent Claim
21 words
The device of claim 4, wherein said first dielectric layer comprises a fluorocarbon polymer and said second dielectric layer comprises polyimide.
Claim 59
Dependent Claim
83 words
A microwave system comprising an integrated microwave diode structure, wherein said diode structure contains thin-film metallization on a dielectric layer which is on a conductive heat sink, said metallization, dielectric layer and heat sink forming transmission line segments and reactive elements which connect a semiconductor active element to bond pads, and said transmission line segments and reactive elements configure impedance-matching elements: a plurality of external microwave circuit elements; and means for connecting said diode structure to ones of said external microwave circuit elements.
Claim 60
Dependent Claim
83 words
A microwave system comprising an integrated microwave diode structure, wherein said diode structure contains thin-film metallization on a dielectric layer which is on a conductive heat sink, said metallization, dielectric layer and heat sink forming transmission line segments and reactive elements which connect a semiconductor active element to bond pads, and said transmission line segments and reactive elements configure impedance-matching elements: a plurality of external microwave circuit elements; and means for connecting said diode structure to ones of said external microwave circuit elements.
Claim 61
Dependent Claim
83 words
A microwave system comprising an integrated microwave diode structure, wherein said diode structure contains thin film metallization on a dielectric layer which is on a conductive heat sink, said metallization dielectric layer and heat sink forming transmission line segments and reactive elements which connect a semiconductor active element to bond pads; a plurality of external microwave circuit elements; and means for connecting said diode structure, through lead wires or ribbons bonded to ones of said bond pads, to said external microwave circuit elements.
Claim 62
Dependent Claim
83 words
A microwave system comprising an integrated microwave diode structure, wherein said diode structure contains thin film metallization on a dielectric layer which is on a conductive heat sink, said metallization dielectric layer and heat sink forming transmission line segments and reactive elements which connect a semiconductor active element to bond pads; a plurality of external microwave circuit elements; and means for connecting said diode structure, through lead wires or ribbons bonded to ones of said bond pads, to said external microwave circuit elements.
Claim 63
Dependent Claim
18 words
The system of claim 51, wherein said diode structure includes a plurality of semiconductor elements connected in parallel.
Claim 64
Dependent Claim
12 words
The system of claim 51, wherein said semiconductor elements comprise IMPATT diodes.
Claim 65
Dependent Claim
29 words
The system of claim 51, wherein said diode structure includes a plurality of said semiconductor elements and a power-combining network connected to combine the outputs of said semiconductor elements.
Claim 66
Dependent Claim
24 words
The system of claim 51, wherein said diode structure is an oscillator having an output frequency in the range between 30 and 300 gigahertz.
Claim 67
Dependent Claim
25 words
The system of claim 51, wherein said diode structure is a voltage-controlled oscillator having an output frequency in the range between 30 and 300 gigahertz.
Claim 68
Dependent Claim
13 words
The system of claim 51, wherein said external circuit elements include a circulator.
Claim 69
Dependent Claim
51 words
The system of claim 51, wherein said external circuit elements connect the output of said diode structure to an antenna, but no power amplification stages are interposed between the output of said diode structure and said antenna, and wherein said diode structure has an output frequency in excess of 30 GHz.
Claim 70
Dependent Claim
35 words
The system of claim 51, comprising a plurality of said diode structures configured to operated as oscillators, and wherein said external circuit elements comprise a power-combining network connected to combine the outputs of said oscillators.
Claim 71
Dependent Claim
15 words
The system of claim 51, wherein said external network comprises a plurality of phase-shifting elements.
Claim 72
Dependent Claim
22 words
The system of claim 51, wherein said impedance-matching circuits on said diode structure provide an output impedance of at least ten ohms.
Claim 73
Dependent Claim
32 words
The system of claim 51, wherein said external circuit elements comprise an impedance-matching network, and wherein said impedance-matching circuits on said diode structure provide an output impedance of at least ten ohms.
Claim 74
Dependent Claim
20 words
The system of claim 51, wherein said diode structure includes both a voltage-controlled oscillator and a local oscillator monolithically integrated.
Claim 75
Dependent Claim
22 words
The system of claim 51, wherein said diode structure includes a voltage-controlled oscillator, a local oscillator, and a mixer, all monolithically integrated.
Claim 76
Dependent Claim
18 words
The system of claim 52, wherein said diode structure includes a plurality of semiconductor elements connected in parallel.
Claim 77
Dependent Claim
12 words
The system of claim 52, wherein said semiconductor elements comprise IMPATT diodes.
Claim 78
Dependent Claim
29 words
The system of claim 52, wherein said diode structure includes a plurality of said semiconductor elements and a power-combining network connected to combine the outputs of said semiconductor elements.
Claim 79
Dependent Claim
24 words
The system of claim 52, wherein said diode structure is an oscillator having an output frequency in the range between 30 and 300 gigahertz.
Claim 80
Dependent Claim
25 words
The system of claim 52, wherein said diode structure is a voltage-controlled oscillator having an output frequency in the range between 30 and 300 gigahertz.
Claim 81
Dependent Claim
13 words
The system of claim 52, wherein said external circuit elements include a circulator.
Claim 82
Dependent Claim
51 words
The system of claim 52, wherein said external circuit elements connect the output of said diode structure to an antenna, but no power amplification stages are interposed between the output of said diode structure and said antenna, and wherein said diode structure has a output frequency in excess of 30 GHz.
Claim 83
Dependent Claim
35 words
The system of claim 52, comprising a plurality of said diode structures configured to operated as oscillators, and wherein said external circuit elements comprise a power-combining network connected to combine the outputs of said oscillators.
Claim 84
Dependent Claim
15 words
The system of claim 52, wherein said external network comprises a plurality of phase-shifting elements.
Claim 85
Dependent Claim
22 words
The system of claim 52, wherein said impedance-matching circuits on said diode structure provide an output impedance of at least ten ohms.
Claim 86
Dependent Claim
32 words
The system of claim 52, wherein said external circuit elements comprise an impedance-matching network, and wherein said impedance-matching circuits on said diode structure provide an output impedance of at least ten ohms.
Claim 87
Dependent Claim
20 words
The system of claim 52, wherein said diode structure includes both a voltage-controlled oscillator and a local oscillator monolithically integrated.
Claim 88
Dependent Claim
22 words
The system of claim 52, wherein said diode structure includes a voltage-controlled oscillator, a local oscillator, and a mixer, all monolithically integrated.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-06-15 | 1990-12-15 | 1991-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-15 | 1994-12-15 | 1995-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-15 | 1998-12-15 | 1999-06-16 | $7700.00 | Window Closed / Lapsed |