Signal detecting circuit

Claim 2

A signal detecting circuit comprising a first source follower having an input connected to a first voltage source, a second source follower having an input connected to a second voltage source, first transistor means having a gate connected to the input of the second source follower and a source connected through a resistor to an output of the first source follower, a signal input terminal connected to the source of said first transistor means, and a voltage comparator having two inputs, one of which is connected to the source of said first transistor means and the other of which is connected to an output of the second source follower.

Claim 3

A signal detecting circuit as claimed in claim 1 wherein the signal input terminal is connected through a capacitor to the source of said first transistor means.

Claim 4

A signal detecting circuit as claimed in claim 1 wherein the first source follower includes a first drain-grounded p-channel insulated gate field effect transistor having a gate connected to the first voltage source and a source connected to the resistor and also connected through a constant current source to a positive supply voltage, and wherein the second source follower includes a second drain-grounded p-channel insulated gate field effect transistor having a gate connected to the second voltage source and a source connected to the other input of the voltage comparator and also connected through another constant current source to the positive supply voltage, and wherein said first transistor means comprises a third p-channel insulated gate field effect transistor having a gate connected to the gate of the second p-channel field effect transistor and a drain connected to ground.

Claim 5

A signal detecting circuit as claimed in claim 3 wherein the voltage of the first voltage source is smaller than that of the second voltage source, and the resistance of the resistor is sufficiently larger than the conduction resistance of said first transistor means.

Claim 6

A signal detecting circuit as claimed in claim 3 wherein each of the first and second voltage sources includes a pair of series-connected insulated gate field effect transistors, each having a gate and a drain commonly connected to each other.

Claim 7

A signal detecting circuit as claimed in claim 3 wherein each of the first and second voltage sources includes a p-channel insulated gate field effect transistor having a source connected to the positive supply voltage and a gate and a drain commonly connected to an output terminal of the voltage source, and an n-channel source-grounded insulated gate field effect transistor having a gate and drain commonly connected to the output terminal of the voltage source.

Claim 8

A signal detecting circuit as claimed in claim 3 wherein each of the first and second voltage sources includes an n-channel insulated gate field effect transistor having a gate and a drain commonly connected to the positive supply voltage and a source connected to an output terminal of the voltage source, and another n-channel source-grounded insulated gate field effect transistor having a gate and drain commonly connected to the output terminal of the voltage source.

Claim 9

A signal detecting circuit as claimed in claim 3 wherein each of the first and second voltage sources includes a p-channel insulated gate field effect transistor having a source connected to the positive supply voltage and a gate and a drain commonly connected to an output terminal of the voltage source, and another p-chaannel insulated gate field effect transistor having a source connected to the output terminal of the voltage source and a gate and a drain commonly grounded.

Claim 10

A signal detecting circuit as claimed in claim 1 wherein the first source follower includes a first n-channel insulated gate field effect transistor having a gate connected to the first voltage source and a drain connected to a positive supply voltage, the source of the first field effect transistor being connected to the resistor and also grounded through a constant current source, wherein the second source follower includes a second n-channel insulated gate field effect transistor having a gate connected to the second voltage source and a drain connected to the positive supply voltage, the source of the second n-channel field effect transistor being connected to the other input of the voltage comparator and also grounded through another constant current source, and wherein said first transistor means comprises a third n-channel insulated gate field effect transistor having a gate connected to the gate of said second n-channel field effect transistor and a drain connected to the positive supply voltage.

Claim 11

A signal detecting circuit as claimed in claim 9 wherein the voltage of the first voltage source is larger than that of the second voltage source, and the resistance of the resistor is sufficiently larger than the conduction resistance of said first transistor means.

Claim 12

A signal detecting circuit as claimed in claim 9 wherein each of the first and second voltage sources includes a pair of series-connected insulated gate field effect transistors, each having a gate and a drain commonly connected to each other.

Claim 13

A signal detecting circuit as claimed in claim 9 wherein each of the first and second voltage sources includes a p-channel insulated gate field effect transistor having a source connected to the positive supply voltage and a gate and a drain commonly connected to an output terminal of the voltage source, and an n-channel source-grounded insulated gate field effect transistor having a gate and drain commonly connected to the output terminal of the voltage source.

Claim 14

A signal detecting circuit as claimed in claim 9 wherein each of the first and second voltage sources includes an n-channel insulated gate field effect transistor having a gate and a drain commonly connected to the positive supply voltage and a source connected to an output terminal of the voltage source, and another n-channel source-grounded insulated gate field effect transistor having a gate and drain commonly connected to the output terminal of the voltage source.

Claim 15

A signal detecting circuit as claimed in claim 9 wherein each of the first and second voltage sources includes a p-channel insulated gate field effect transistor having a source connected to the positive supply voltage and a gate and a drain commonly connected to an output terminal of the voltage source, and another p-channel insulated gate field effect transistor having a source connected to the output terminal of the voltage source and a gate and a drain commonly grounded.

Claim 16

A signal detecting circuit comprising a first insulated gate field effect transistor having a gate connected to a first voltage source, a second insulated gate field effect transistor having a gate connected to a second voltage source, a third insulated gate field effect transistor having a gate connected to the gate of the second field effect transistor and a source which is connected through a resistor to a source of the first field effect transistor, a signal input terminal connected to the source of the third field effect transistor, and a voltage comparator having two inputs, one of which is connected to the source of the third field effect transistor and the other of which is connected to an output of the second field effect transistor.

Claim 17

A signal detecting circuit comprising a first insulated gate field effect transistor having a gate connected to a first voltage source, a second insulated gate field effect transistor having a gate connected to a second voltage source, a third insulated gate field effect transistor having a gate connected to the gate of the second field effect transistor and a source which is connected through a resistor to a source of the first field effect transistor, a signal input terminal connected to the source of the third field effect transistor, and a voltage comparator having two inputs, one of which is connected to the source of the third field effect transistor and the other of which is connected to an output of the second field effect transistor.

Claim 18

A signal detecting circuit as claimed in claim 15 wherein the signal input terminal is connected through a capacitor to the source of said third field effect transistor.

Claim 19

A signal detecting circuit as claimed in claim 16 wherein the first field effect transistor is of a p-channel type having a grounded drain and a source connected to the resistor and also connected through a constant current source to a positive supply voltage, wherein the second field effect transistor is also of a p-channel type having a grounded drain and a source connected to the other input of the voltage comparator and also connected through another constant current source to the positive supply voltage, and wherein the third field effect transistor is of a p-channel type having a drain connected to ground.

Claim 20

A signal detecting circuit as claimed in claim 17 wherein the voltage of the first voltage source is smaller than that of the second voltage source, and the resistance of the resistor is sufficiently larger than the conduction resistance of the third field effect transistor.

Claim 21

A signal detecting circuit as claimed in claim 16 wherein the first field effect transistor is of an n-channel type having a drain connected to a positive supply voltage, and a source connected to the resistor and also grounded through a constant current source, wherein the second field effect transistor is also of an n-channel type having a drain connected to the positive supply voltage and a source connected to the other input of the voltage comparator and also grounded through another constant current source, and wherein the third field effect transistor is of an n-channel type having a drain connected to the positive supply voltage.

Claim 22

A signal detecting circuit as claimed in claim 19 wherein the voltage of the first voltage source is larger than that of the second voltage source, and the resistance of the resistor is sufficiently larger than the conduction resistance of said third field effect transistor.