Process for the production of thin film hall effect transducers

Claim 1

A process for the production of thin film Hall effect transducers of the type comprising semiconductor elements deposited in vacuuo in thin film form, on a substrate and recrystallized in situ following deposition by a remelting of the semiconductor material, wherein it comprises the following stages: following vacuum deposition of the thin semiconductor film on the substrate, the active elements of the transducer are cut from said film so as to produce these active elements in the form of narrow strips having a width less than 20 μm; the substrate and active elements are then covered with an insulating SiO 2 coating; the said coating is covered with a conductive heat-resistant metal coating with a thickness of approximately 1000 Å; said heat-resistant metal coating is etched so as to form local heating resistors above the narrow semiconductor strips; passing an electric current into said heating resistors so as to obtain by the Joule effect, the heating and then the melting and recrystallization of the semiconductor strips; by successive chemical etching operations, the local heating resistors above the semiconductor strips are removed and then the SiO 2 coating is removed from the substrate except at the semiconductor strips; a conductive coating is formed on the substrate for the contact points for supplying the transducer with polarizing current and for sampling the Hall voltage.