US3895391A
Expired / Lapsed
US
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Magnetosensitive thin film semiconductor element and a process for manufacturing same
Assignee: Hitachi Ltd
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Filing: 1973-11-06
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Granted: 1975-07-15
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Expires: 1993-11-06
Abstract
Abstract A magnetosensitive thin film semiconductor element having the structure in which said element is comprised of a substrate of a material exhibiting a high magnetic permeability, the surface of which has channels of a desired pattern and depth, and comprised of a thin film embedded therein, said substrate, if necessary, being covered by an insulator film, and a process for manufacturing the semiconductor element, which comprises steps of depositing a semiconductor thin film by, for example, vacuum evaporation over the entire surface of the substrate and thereafter removing the amount of the thin film which was not deposited inside said channels, by polishing or grinding. In accordance with the process, the thin film semiconductor element having a uniform thickness of thin film can be easily obtained and is not affected by mechanical pressure applied in the subsequent step.
Inventors
- 👤 Katsuo Konishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:07
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/37; G11B5/376; G11B5/378; H; H10; H10N; H10N52/00; H10N52/101
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
88 words
A magnetosensitive thin film semiconductor element, comprising a semiconductor thin film having a predetermined flat shape and thickness, the bottom and side surfaces of which are surrounded by an insulator film and adhere to said insulator film which constitutes a substrate consisting of a material exhibiting a high magnetic permeability and covered by said insulator film which is harder than the material used for said semiconductor thin film and the upper surface of said semiconductor thin film being approximately on a level with the surface of said substrate.
Claim 2
Dependent Claim
88 words
A magnetosensitive thin film semiconductor element, comprising a semiconductor thin film having a predetermined flat shape and thickness, the bottom and side surfaces of which are surrounded by an insulator film and adhere to said insulator film which constitutes a substrate consisting of a material exhibiting a high magnetic permeability and covered by said insulator film which is harder than the material used for said semiconductor thin film and the upper surface of said semiconductor thin film being approximately on a level with the surface of said substrate.
Claim 3
Dependent Claim
17 words
The magnetosensitive thin film semiconductor element according to claim 1, wherein said semiconductor thin film is polycrystalline.
Claim 4
Dependent Claim
19 words
The magnetosensitive thin film semiconductor element according to claim 1, wherein said semiconductor thin film consists of a compound.
Claim 5
Dependent Claim
18 words
The magnetosensitive thin film semiconductor element according to claim 1, wherein said semiconductor thin film consists of InSb.
Claim 6
Dependent Claim
21 words
The magnetosensitive thin film semiconductor element according to claim 1, wherein said material exhibiting a high magnetic permeability is a ferrite.
Claim 7
Dependent Claim
29 words
The magnetosensitive thin film semiconductor element according to claim 1, wherein said semiconductor thin film consists of InSb and said material exhibiting a high magnetic permeability is a ferrite.
Claim 8
Dependent Claim
17 words
The magnetosensitive thin film semiconductor element according to claim 1, wherein said insulator film consists of SiO2.
Claim 9
Dependent Claim
128 words
A magnetosensitive thin film semiconductor element, comprising: a substrate of a material having high magnetic permeability; a first layer of insulating material disposed on a surface of said substrate, a first portion of said first layer of insulating material being relatively thin and a second portion of said first layer of insulating material, surrounding said first portion, being relatively thick; and a layer of semiconductor material disposed entirely on said first portion of said layer of insulating material and contiguous to the side portion of said second portion of said layer of insulating material, the thickness of said layer of semiconductor material being such that the upper surface thereof is approximately on a level with the surface of said second portion of said first layer of insulating material.
Claim 10
Dependent Claim
128 words
A magnetosensitive thin film semiconductor element, comprising: a substrate of a material having high magnetic permeability; a first layer of insulating material disposed on a surface of said substrate, a first portion of said first layer of insulating material being relatively thin and a second portion of said first layer of insulating material, surrounding said first portion, being relatively thick; and a layer of semiconductor material disposed entirely on said first portion of said layer of insulating material and contiguous to the side portion of said second portion of said layer of insulating material, the thickness of said layer of semiconductor material being such that the upper surface thereof is approximately on a level with the surface of said second portion of said first layer of insulating material.
Claim 11
Dependent Claim
89 words
The magnetosensitive thin film semiconductor element according to claim 8, further including a second layer of insulating materIal disposed in the upper surfaces of each of said first layer of insulating material and said layer of semiconductor material and having an opening therein exposing a portion of the upper surface of said layer of semiconductor material, and a thin metallic film disposed on said second layer of insulating material and extending through said opening into contact with said portion of the upper surface of said layer of semiconductor material.
Claim 12
Dependent Claim
130 words
A magnetosensitive thin film semiconductor element, comprising: a substrate of a material having high magnetic permeability; a first layer of insulating material disposed on a surface of said substrate, a first portion of said first layer of insulating material being relatively thin and a second portion of said first layer of insulating material, surrounding said first portion, being relatively thick; and a layer of semiconductor material disposed entirely on said first portion of said layer of insulating material and contiguous to the side portion of said second portion of said layer of insulating material, the thickness of said layer of semiconductor material being such that the upper surface thereof is at most approximately on a level with the surface of said second portion of said first layer of insulating material.
Claim 13
Dependent Claim
130 words
A magnetosensitive thin film semiconductor element, comprising: a substrate of a material having high magnetic permeability; a first layer of insulating material disposed on a surface of said substrate, a first portion of said first layer of insulating material being relatively thin and a second portion of said first layer of insulating material, surrounding said first portion, being relatively thick; and a layer of semiconductor material disposed entirely on said first portion of said layer of insulating material and contiguous to the side portion of said second portion of said layer of insulating material, the thickness of said layer of semiconductor material being such that the upper surface thereof is at most approximately on a level with the surface of said second portion of said first layer of insulating material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-07-14 | 1979-01-13 | 1979-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-07-14 | 1983-01-13 | 1983-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-07-14 | 1987-01-13 | 1987-07-15 | $7700.00 | Window Closed / Lapsed |