US4665504A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Memory device containing electrically conducting substrate having deposited hereon a layer of amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material
Assignee: BP PLC
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Filing: 1983-11-16
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Granted: 1987-05-12
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Expires: 2003-11-16
Abstract
Abstract A memory device comprises an electrically conducting substrate having deposited thereon a layer of an amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material to form a junction. Preferably the silicon-containing material is silicon and the junction is a heterojunction. The device has fast switching characteristics and good stability.
Inventors
- 👤 Peter J. Hockley
- 👤 Michael J. Thwaites
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:09
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/822; G; G11; G11C; G11C17/00; G11C17/14; G11C17/16; H10D48/00; H10D48/30; H10D48/38; H10D48/381; H10D62/40; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
56 words
A memory device conditioned by the application of a voltage sufficiently large to permanently modify the electrical characteristics to a layered semiconductor structure, the memory device comprising an electrically conducting substrate having deposited thereon a layer of an amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material to form a junction.
Claim 2
Dependent Claim
56 words
A memory device conditioned by the application of a voltage sufficiently large to permanently modify the electrical characteristics to a layered semiconductor structure, the memory device comprising an electrically conducting substrate having deposited thereon a layer of an amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material to form a junction.
Claim 3
Dependent Claim
31 words
A memory device according to claim 1 wherein the layer of amorphous or microcrystalline silicon-containing material is amorphous or microcrystalline silicon and forms a heterojunction with the layer of silicon-carbon alloy.
Claim 4
Dependent Claim
35 words
A memory device according to claim 1 wherein the layer of amorphous or microcrystalline silicon-containing material is also a layer of a silicon-carbon alloy and forms a homojunction with the first layer of silicon-carbon alloy.
Claim 5
Dependent Claim
25 words
A memory device according to claim 1 wherein the layers have the configuration p-i, p + -i, p-n, p + -n, or p-n + .
Claim 6
Dependent Claim
21 words
A memory device according to claim 1 wherein at least three layers are present having a p-i-n or p-n-i type configuration.
Claim 7
Dependent Claim
57 words
A memory device, conditioned by the application of a voltage sufficiently large to permanently modify the electrical characteristics to a layered semiconductor structure, the memory device comprising an electrically conducting substrate having deposited thereon a p-type layer of an amorphous or microcrystalline silicon-carbon alloy and an n-type layer of amorphous or microcrystalline silicon to form a heterojunction.
Claim 8
Dependent Claim
57 words
A memory device, conditioned by the application of a voltage sufficiently large to permanently modify the electrical characteristics to a layered semiconductor structure, the memory device comprising an electrically conducting substrate having deposited thereon a p-type layer of an amorphous or microcrystalline silicon-carbon alloy and an n-type layer of amorphous or microcrystalline silicon to form a heterojunction.
References Cited (Backward Citations)
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Cited
GB1300528A
Cited
US3740620A
Cited
US4103312A
Cited
US4199692A
Cited
US4459163A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-11 | 1990-11-10 | 1991-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-11 | 1994-11-10 | 1995-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-11 | 1998-11-10 | 1999-05-12 | $7700.00 | Window Closed / Lapsed |