Patent US4663825A successfully refreshed from Google Patents.
US4663825A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device
Assignee: Toshiba Corp
•
Filing: 1985-09-25
•
Granted: 1987-05-12
•
Expires: 2005-09-25
Abstract
Abstract A method of manufacturing a semiconductor device comprises the steps of forming a gate electrode on a silicon substrate of a p-conductivity type and source and in the drain regions of an n-conductivity type substrate so as to interpose the gate electrode therebetween; depositing silicon on the source and drain regions to form a polysilicon wiring layer; and ion-implanting an impurity to an interface between the source and drain regions and the polysilicon wiring layer at acceleration voltage of 40 keV and a dose of 5×10 15 cm -2 to mechanically break down an oxide film formed at said interface.
Inventors
- 👤 Takeo Maeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:24
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; Y; Y10; Y10S; Y10S148/00; Y10S148/14
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
155 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first polysilicon wiring layer on a major surface of a semiconductor substrate; forming an insulating layer on the first polysilicon wiring layer; forming through-holes in the insulating layer to expose parts of the first polysilicon wiring layer; forming a polysilicon film of a high resistance on the exposed parts of the first polysilicon wiring layer and the insulating layer; forming a pattern on the part of the polysilicon film on the insulating layer; ion-implanting an impurity at an interface between the first polysilicon wiring layer and polysilicon film through the polysilicon film masked with the pattern, whereby an oxide film formed at said interface is mechanically broken down and the polysilicon film is divided into a conductive portion which is implanted with the impurity and a non-conductive portion which is masked with the pattern; and removing the pattern from the polysilicon film.
Claim 2
Independent Claim
155 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first polysilicon wiring layer on a major surface of a semiconductor substrate; forming an insulating layer on the first polysilicon wiring layer; forming through-holes in the insulating layer to expose parts of the first polysilicon wiring layer; forming a polysilicon film of a high resistance on the exposed parts of the first polysilicon wiring layer and the insulating layer; forming a pattern on the part of the polysilicon film on the insulating layer; ion-implanting an impurity at an interface between the first polysilicon wiring layer and polysilicon film through the polysilicon film masked with the pattern, whereby an oxide film formed at said interface is mechanically broken down and the polysilicon film is divided into a conductive portion which is implanted with the impurity and a non-conductive portion which is masked with the pattern; and removing the pattern from the polysilicon film.
Claim 3
Dependent Claim
50 words
The method according to claim 1, wherein said first polysilicon wiring-layer-forming step includes a step of patterning the first polysilicon wiring layer to form a gate electrode, and a step of ion-implanting an impurity into the substrate, using the gate electrode as a mask, to form source and drain regions.
Claim 4
Dependent Claim
17 words
The method according to claim 2, wherein said both ion-implantations employ impurities of the same conductivity type.
Claim 5
Independent Claim
60 words
A method of manufacturing a semiconductor device, comprising the steps of: preparing a silicon or polysilicon layer of one conductivity type; forming a polysilicon film of high resistance; and ion-implanting an impurity of the same conductivity type as that of the silicon or polysilicon layer into an interface between the layer and polysilicon film through part of the polysilicon film.
Claim 6
Independent Claim
60 words
A method of manufacturing a semiconductor device, comprising the steps of: preparing a silicon or polysilicon layer of one conductivity type; forming a polysilicon film of high resistance; and ion-implanting an impurity of the same conductivity type as that of the silicon or polysilicon layer into an interface between the layer and polysilicon film through part of the polysilicon film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-11 | 1990-11-10 | 1991-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-11 | 1994-11-10 | 1995-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-11 | 1998-11-10 | 1999-05-12 | $7700.00 | Window Closed / Lapsed |