US4663188A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making a photodetector with enhanced light absorption
Assignee: RCA Corp
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Filing: 1985-05-17
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Granted: 1987-05-05
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Expires: 2005-05-17
Abstract
Abstract A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.
Inventors
- 👤 James Kane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:15
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F71/00; H10F71/138; H10F77/00; H10F77/30; H10F77/306; H10F77/70; H10F77/707; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
77 words
A method of fabricating a photodetector comprising the steps of: depositing a light transmissive electrically conducting layer having roughened surface which has a dominant peak-to-valley roughness greater than about 100 nanometers and a thickness greater than about 250 nanometers by chemical vapor deposition from an atmosphere containing tin, oxygen, hydrogen, chlorine and a conductivity modifying dopant onto a surface of a substrate; and depositing a layer of hydrogenated amorphous silicon onto the surface of said conducting layer.
Claim 2
Independent Claim
77 words
A method of fabricating a photodetector comprising the steps of: depositing a light transmissive electrically conducting layer having roughened surface which has a dominant peak-to-valley roughness greater than about 100 nanometers and a thickness greater than about 250 nanometers by chemical vapor deposition from an atmosphere containing tin, oxygen, hydrogen, chlorine and a conductivity modifying dopant onto a surface of a substrate; and depositing a layer of hydrogenated amorphous silicon onto the surface of said conducting layer.
Claim 3
Dependent Claim
25 words
The method of claim 1 wherein the substrate is held at a temperature greater than about 350° C. during the deposition of said conducting layer.
Claim 4
Dependent Claim
27 words
The method of claim 2 wherein the substrate is held at a temperature between about 450° C. and 550° C. during the deposition of said conducting layer.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said conducting layer is between about 300 and 800 nanometers thick.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein said roughened surface has a dominant peak-to-valley roughness between about 100 and 1000 nanometers.
Claim 7
Dependent Claim
24 words
The method of claim 5 wherein the dominant peak-to-valley roughness of the surface of said conducting layer is between about 200 and 500 nanometers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-04 | 1990-11-03 | 1991-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-04 | 1994-11-03 | 1995-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-04 | 1998-11-03 | 1999-05-05 | $7700.00 | Window Closed / Lapsed |