US4660068A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Substrate structure of semiconductor device and method of manufacturing the same
Assignee: NTT Inc
•
Filing: 1983-08-22
•
Granted: 1987-04-21
•
Expires: 2003-08-22
Abstract
Abstract A substrate structure utilized to fabricate a semiconductor device is constituted by a silicon substrate; an element region selectively formed on the silicon substrate and a relatively thick field oxide region formed adjacent to the element region; an element isolating region formed between the element region and the field oxide region, the element isolating region being in direct contact with the field oxide region; the element isolating region being provided with a relatively deep groove formed in the silicon substrate and having a relatively small width; a silicon oxide insulating film formed on the inner wall of the groove; and a silicon nitride insulating film disposed on the silicon oxide insulating film. The surfaces of the element region, the element isolating region and the field oxide region on the silicon substrate are formed substantially flat.
Inventors
- 👤 Kazuhito Sakuma
- 👤 Yoshinobu Arita
- 👤 Masaaki Sato
- 👤 Nobuyoshi Awaya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:58
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/0145; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
165 words
A substrate structure of a semiconductor device comprising: a silicon substrate; an element region selectively formed on said silicon substrate; and a relatively thick field oxide region formed adjacent to said element region; and an element isolating region formed between said element region and said field oxide region, said element isolating region being in direct contact with said field oxide region; and said element isolating region being provided with a relatively deep groove of greater than two micrometers formed in said silicon substrate and having a relatively small width of less than one micrometer, and the thickness of said field oxide region being of the same order of magnitude as the depth of said groove; and a silicon oxide insulating film formed on the inner wall of said groove; and a silicon nitride insulating film disposed on said silicon oxide insulating film; wherein surfaces of said element region, the element isolating region and the field oxide region on said silicon substrate are formed substantially flat.
Claim 2
Dependent Claim
165 words
A substrate structure of a semiconductor device comprising: a silicon substrate; an element region selectively formed on said silicon substrate; and a relatively thick field oxide region formed adjacent to said element region; and an element isolating region formed between said element region and said field oxide region, said element isolating region being in direct contact with said field oxide region; and said element isolating region being provided with a relatively deep groove of greater than two micrometers formed in said silicon substrate and having a relatively small width of less than one micrometer, and the thickness of said field oxide region being of the same order of magnitude as the depth of said groove; and a silicon oxide insulating film formed on the inner wall of said groove; and a silicon nitride insulating film disposed on said silicon oxide insulating film; wherein surfaces of said element region, the element isolating region and the field oxide region on said silicon substrate are formed substantially flat.
Claim 3
Dependent Claim
85 words
The substrate structure according to claim 1 wherein said element isolating region includes a filling material, filling said recess defined by an inner side of said silicon nitride insulating film, said silicon oxide and silicon nitride film and said filling material being selected to prevent defects in said silicon substrate, and wherein a portion of said silicon nitride film in contact with said field oxide region is at a lower level than a portion of said silicon nitride film in contact with said element region.
Claim 4
Dependent Claim
23 words
The substrate structure according to claim 1 which further comprises a doped channel cut region formed over a bottom of said deep groove.
Claim 5
Dependent Claim
25 words
The substrate structure according to claim 2 wherein said filling material comprises an electroconductive material capable of discharging electric charge in the adjacent insulating film.
Claim 6
Dependent Claim
25 words
The substrate structure according to claim 4 wherein said filling material is selected from the group consisting of polycrystalline silicon, semiinsulating materials and electroconductive materials.
Claim 7
Dependent Claim
31 words
The substrate structure according to claim 1 wherein a bottom of said deep groove reaches an insulating region embedded in said silicon substrate or an insulating substrate supporting said silicon substrate.
References Cited (Backward Citations)
JPS5345675B2
Cited
JPS5350636A
Cited
JPS55157044A
Cited
EP0048175A2
Cited
US4331708A
Cited
US4502913A
Cited
US4509249A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-20 | 1990-10-20 | 1991-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-20 | 1994-10-20 | 1995-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-20 | 1998-10-20 | 1999-04-21 | $7700.00 | Window Closed / Lapsed |