Patent US4659426A successfully refreshed from Google Patents.
US4659426A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma etching of refractory metals and their silicides
Assignee: Texas Instruments Inc
•
Filing: 1985-05-03
•
Granted: 1987-04-21
•
Expires: 2005-05-03
Abstract
Abstract Refractory metals, refractory metal silicide, and polysilicon/refractory metal silicide sandwich structures integrated circuits are etched using carbonyl chemistry. That is, the deposited material is plasma etched using an etchant gas mixture which contains a gas, such as CO2, which can dissociate to provide carbonyl groups (CO) or, in combination with halogen sources, carbonyl halide radicals.
Inventors
- 👤 Clyde R. Fuller
- 👤 Gordon P. Pollack
- 👤 Robert H. Eklund
- 👤 Dave Monahan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:59
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
79 words
A method for patterning thin-film interconnects, comprising the steps of: depositing a thin film of a composite layer structure comprising both polycrystalline silicon and a metal silicide on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon; providing a reagent gas flow in proximity to said thin film of metal, said reagent gas flow including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal.
Claim 2
Independent Claim
79 words
A method for patterning thin-film interconnects, comprising the steps of: depositing a thin film of a composite layer structure comprising both polycrystalline silicon and a metal silicide on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon; providing a reagent gas flow in proximity to said thin film of metal, said reagent gas flow including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal.
Claim 3
Independent Claim
69 words
A method for patterning thin-film metallization, comprising the steps of: depositing a thin film of a metal on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon: providing a reagent gas flow in proximity to said thin film of metal, said reagent gas flow including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal.
Claim 4
Independent Claim
69 words
A method for patterning thin-film metallization, comprising the steps of: depositing a thin film of a metal on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon: providing a reagent gas flow in proximity to said thin film of metal, said reagent gas flow including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal.
Claim 5
Independent Claim
72 words
A method for patterning thin-film interconnects, comprising the steps of: depositing a thin film of a metal silicide on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon; providing a reagent gas flow in proximity to said thin film of metal silicide, said reagent gas flow including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal silicide.
Claim 6
Independent Claim
72 words
A method for patterning thin-film interconnects, comprising the steps of: depositing a thin film of a metal silicide on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon; providing a reagent gas flow in proximity to said thin film of metal silicide, said reagent gas flow including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal silicide.
Claim 7
Independent Claim
84 words
A method for patterning thin-film interconnects, comprising the steps of: depositing a thin film of a composite layer structure comprising both polycrystalline silicon and a metal silicide on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon; providing a reagent gas flow in proximity to said thin film of metal, said reagent gas flow including a halogen source and including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal.
Claim 8
Independent Claim
84 words
A method for patterning thin-film interconnects, comprising the steps of: depositing a thin film of a composite layer structure comprising both polycrystalline silicon and a metal silicide on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon; providing a reagent gas flow in proximity to said thin film of metal, said reagent gas flow including a halogen source and including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal.
Claim 9
Independent Claim
74 words
A method for patterning thin-film metallization, comprising the steps of: depositing a thin film of a metal on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon; providing a reagent gas flow in proximity to said thin film of metal, said reagent gas flow including a halogen source and including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal.
Claim 10
Independent Claim
74 words
A method for patterning thin-film metallization, comprising the steps of: depositing a thin film of a metal on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon; providing a reagent gas flow in proximity to said thin film of metal, said reagent gas flow including a halogen source and including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal.
Claim 11
Independent Claim
77 words
A method for patterning thin-film interconnects, comprising the steps of: depositing a thin film of a metal silicide on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon; providing a reagent gas flow in proximity to said thin film of metal silicide, said reagent gas flow including a halogen source and including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal silicide.
Claim 12
Independent Claim
77 words
A method for patterning thin-film interconnects, comprising the steps of: depositing a thin film of a metal silicide on a predetermined substrate, having a patterned masking material in a predetermined pattern thereon; providing a reagent gas flow in proximity to said thin film of metal silicide, said reagent gas flow including a halogen source and including a carbonyl source gas; and applying rf power to create a plasma in proximity to said thin film of metal silicide.
Claim 13
Dependent Claim
12 words
The method of claim 1, wherein said carbonyl source comprises carbon dioxide.
Claim 14
Dependent Claim
12 words
The method of claim 2, wherein said carbonyl source comprises carbon dioxide.
Claim 15
Dependent Claim
12 words
The method of claim 3, wherein said carbonyl source comprises carbon dioxide.
Claim 16
Dependent Claim
12 words
The method of claim 4, wherein said carbonyl source comprises carbon dioxide.
Claim 17
Dependent Claim
12 words
The method of claim 5, wherein said carbonyl source comprises carbon dioxide.
Claim 18
Dependent Claim
12 words
The method of claim 6, wherein said carbonyl source comprises carbon dioxide.
Claim 19
Dependent Claim
12 words
The method of claim 1, wherein said carbonyl source comprises carbon monoxide.
Claim 20
Dependent Claim
12 words
The method of claim 2, wherein said carbonyl source comprises carbon monoxide.
Claim 21
Dependent Claim
12 words
The method of claim 3, wherein said carbonyl source comprises carbon monoxide.
Claim 22
Dependent Claim
12 words
The method of claim 4, wherein said carbonyl source comprises carbon monoxide.
Claim 23
Dependent Claim
12 words
The method of claim 5, wherein said carbonyl source comprises carbon monoxide.
Claim 24
Dependent Claim
12 words
The method of claim 6, wherein said carbonyl source comprises carbon monoxide.
Claim 25
Dependent Claim
15 words
The method of claim 4, wherein said halogen source comprises a gaseous chlorine bearing species.
Claim 26
Dependent Claim
15 words
The method of claim 5, wherein said halogen source comprises a gaseous chlorine bearing species.
Claim 27
Dependent Claim
15 words
The method of claim 6, wherein said halogen source comprises a gaseous chlorine bearing species.
Claim 28
Dependent Claim
22 words
The method of claim 2, wherein said metal is selected from the group consisting of platinum, tantalum, niobium, columbium, rhodium, and palladium.
Claim 29
Dependent Claim
22 words
The method of claim 5, wherein said metal is selected from the group consisting of platinum, tantalum, niobium, columbium, rhodium, and palladium.
Claim 30
Dependent Claim
26 words
The method of claim 1, wherein said silicide is selected from the group consisting of titanium silicide, tungsten silicide, molybdenum silicide, cobalt silicide, and nickel silicide.
Claim 31
Dependent Claim
26 words
The method of claim 3, wherein said silicide is selected from the group consisting of titanium silicide, tungsten silicide, molybdenum silicide, cobalt silicide, and nickel silicide.
Claim 32
Dependent Claim
26 words
The method of claim 4, wherein said silicide is selected from the group consisting of titanium silicide, tungsten silicide, molybdenum silicide, cobalt silicide, and nickel silicide.
Claim 33
Dependent Claim
26 words
The method of claim 6, wherein said silicide is selected from the group consisting of titanium silicide, tungsten silicide, molybdenum silicide, cobalt silicide, and nickel silicide.
Claim 34
Dependent Claim
23 words
The method of claim 4, wherein said halogen source gas is selected from the group consisting of carbon tetrachloride silicon tetrachloride, and fluorotrichloromethane.
Claim 35
Dependent Claim
23 words
The method of claim 5, wherein said halogen source gas is selected from the group consisting of carbon tetrachloride silicon tetrachloride, and fluorotrichloromethane.
Claim 36
Dependent Claim
23 words
The method of claim 6, wherein said halogen source gas is selected from the group cnsisting of carbon tetrachloride silicon tetrachloride, and fluorotrichloromethane.
Claim 37
Dependent Claim
21 words
The method of claim 4, wherein both said carbonyl source and said halogen source are provided by the same molecular species.
Claim 38
Dependent Claim
21 words
The method of claim 5, wherein both said carbonyl source and said halogen source are provided by the same molecular species.
Claim 39
Dependent Claim
21 words
The method of claim 6, wherein both said carbonyl source and said halogen source are provided by the same molecular species.
Claim 40
Dependent Claim
20 words
The method of claim 31, wherein said carbonyl source and said halogen source are both provided by a carbonyl chloride.
Claim 41
Dependent Claim
20 words
The method of claim 32, wherein said carbonyl source and said halogen source are both provided by a carbonyl chloride.
Claim 42
Dependent Claim
20 words
The method of claim 33, wherein said carbonyl source and said halogen source are both provided by a carbonyl chloride.
Claim 43
Dependent Claim
11 words
The method of claim 34, wherein said carbonyl chloride comprises phosgene.
Claim 44
Dependent Claim
11 words
The method of claim 35, wherein said carbonyl chloride comprises phosgene.
Claim 45
Dependent Claim
11 words
The method of claim 36, wherein said carbonyl chloride comprises phosgene.
Claim 46
Dependent Claim
18 words
The method of claim 2, wherein said metal is selected from the group consisting of tungsten and molybdenum.
Claim 47
Dependent Claim
18 words
The method of claim 5, wherein said metal is selected from the group consisting of tungsten and molybdenum.
Claim 48
Dependent Claim
22 words
The method of claim 5, wherein said metal is selected from the group consisting of iron, chromium, nickel, cobalt, vanadium, and manganese.
Claim 49
Dependent Claim
22 words
The method of claim 5, wherein said metal is selected from the group consisting of iron, chromium, nickel, cobalt, vanadium, and manganese.
Claim 50
Dependent Claim
19 words
The method of claim 2, wherein said metal is selected from the group consisting of copper, silver, and gold.
Claim 51
Dependent Claim
19 words
The method of claim 2, wherein said metal is selected from the group consisting of copper, silver, and gold.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-20 | 1990-10-20 | 1991-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-20 | 1994-10-20 | 1995-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-20 | 1998-10-20 | 1999-04-21 | $7700.00 | Window Closed / Lapsed |