Patent US4658280A successfully refreshed from Google Patents.
US4658280A
Expired / Lapsed
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Amorphous silicon photosensor of layers having differing conductivity
Assignee: Canon Inc
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Filing: 1984-03-07
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Granted: 1987-04-14
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Expires: 2004-03-07
Abstract
Abstract A photosensor comprises a first layer, a second layer and a third layer laminated successively, each layer comprising amorphous silicon and the third layer having at least a pair of electrodes separated from each other at a given interval, characterized in that said second layer has p-type semiconductor characteristics, said first layer and said third layer have semiconductor characteristics of a conduction type different from that of said second layer, and at least said first layer has photoconductivity.
Inventors
- 👤 Toshiyuki Komatsu
- 👤 Katsumi Nakagawa
- 👤 Masaki Fukaya
- 👤 Tatsumi Shoji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:13
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235; H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
83 words
A photoconductive photosensor comprising in sequence a laminate of a first layer, a second layer and a third layer, each layer comprising amorphous silicon and the third layer having at least a pair of electrodes separated from each other at a given interval said electrodes not being directly connected to each other, characterized in that said second layer has p-type semiconductor characteristics, said first layer and said third layer have N-type or undoped semiconductor characteristics, and at least said first layer has photoconductivity.
Claim 2
Dependent Claim
83 words
A photoconductive photosensor comprising in sequence a laminate of a first layer, a second layer and a third layer, each layer comprising amorphous silicon and the third layer having at least a pair of electrodes separated from each other at a given interval said electrodes not being directly connected to each other, characterized in that said second layer has p-type semiconductor characteristics, said first layer and said third layer have N-type or undoped semiconductor characteristics, and at least said first layer has photoconductivity.
Claim 3
Dependent Claim
13 words
A photosensor according to claim 1, wherein the first layer contains an impurity.
Claim 4
Dependent Claim
29 words
A photosensor according to claim 2, wherein the content of the impurity in the first layer is not more than 500 atomic ppm based on the weight of silicon.
Claim 5
Dependent Claim
28 words
A photosensor according to claim 2, wherein the content of the impurity in the first layer is 5 to 250 atomic ppm based on the weight of silicon.
Claim 6
Dependent Claim
17 words
A photosensor according to claim 1, wherein the first layer is 100 to 2000 Å in thickness.
Claim 7
Dependent Claim
27 words
A photosensor according to claim 1 wherein the second layer contains an impurity in amounts from 5 to 1000 atomic ppm based on the weight of silicon.
Claim 8
Dependent Claim
17 words
A photosensor according to claim 1, wherein the second layer is 100 to 2000 Å in thickness.
Claim 9
Dependent Claim
13 words
A photosensor according to claim 1, wherein the third layer contains an impurity.
Claim 10
Dependent Claim
29 words
A photosensor according to claim 8, wherein the content of the impurity in the third layer is not more than 20 atomic ppm based on the weight of silicon.
Claim 11
Dependent Claim
17 words
A photosensor according to claim 1, wherein the third layer is 0.2 to 10 μm in thickness.
Claim 12
Dependent Claim
33 words
A photosensor according to claim 1, wherein atoms of an element of the group Va in the periodic table are doped in at least one of the first layer and the third layer.
Claim 13
Dependent Claim
25 words
A photosensor according to claim 1, wherein atoms of an element of the group IIIa in the periodic table are doped in the second layer.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-13 | 1990-10-13 | 1991-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-13 | 1994-10-13 | 1995-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-13 | 1998-10-13 | 1999-04-14 | $7700.00 | Window Closed / Lapsed |