Patent US4657629A successfully refreshed from Google Patents.
US4657629A
Expired / Lapsed
US
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Bilevel resist process
Assignee: Harris Corp
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Filing: 1986-03-27
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Granted: 1987-04-14
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Expires: 2006-03-27
Abstract
Abstract A bilevel photoresist process employs a first relatively thick photoresist layer deposited over the surface to be patterned. The entirety of this first photoresist layer is exposed to actinic ultraviolet radiation and thereafter subjected to a heat treatment so as to effectively desensitize the layer to the action of a developing agent. Patterning of this first layer is accomplished by depositing a second, relatively thin photoresist layer on the effectively planarized surface of the first layer, selectively exposing the second layer to a mask pattern to be used for patterning the underlying semiconductor structure and thereafter developing the second layer of photoresist. Because of its thickness the first layer effectively acts as an optical buffer between the second relatively thin layer and any underlying metallic reflective interface, so that optical notching of the second layer of photoresist cannot occur. In addition, because the first layer has been completely desensitized to photodeveloping agents, etching through the second layer terminates at the top surface of the first layer. Following patterning of the second photoresist layer, the bilevel photoresist structure is exposed to a reactive ion etch (RIE) which effectively maps the aperture pattern of the second photoresist layer into and through the first photoresist layer.
Inventors
- 👤 Mark G. Bigelow
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:15
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
118 words
For use in a process for manufacturing a semiconductor device, a method of forming a masking layer on an underlying semiconductor structure to be selectively patterned through apertures in said masking layer comprising the steps of: (a) forming a first layer of photoresist material on said semiconductor structure; (b) desensitizing said first layer of photoresist material to the action of developing agent; (c) forming a second layer of photoresist material on said first layer of desensitized photoresist material; (d) photolithographically patterning said second layer of photoresist material so as to expose prescribed surface portions of said first desensitized layer of photoresist material; and (e) removing from said first layer desensitized photoresist material portions beneath said prescribed surface portions.
Claim 2
Dependent Claim
118 words
For use in a process for manufacturing a semiconductor device, a method of forming a masking layer on an underlying semiconductor structure to be selectively patterned through apertures in said masking layer comprising the steps of: (a) forming a first layer of photoresist material on said semiconductor structure; (b) desensitizing said first layer of photoresist material to the action of developing agent; (c) forming a second layer of photoresist material on said first layer of desensitized photoresist material; (d) photolithographically patterning said second layer of photoresist material so as to expose prescribed surface portions of said first desensitized layer of photoresist material; and (e) removing from said first layer desensitized photoresist material portions beneath said prescribed surface portions.
Claim 3
Dependent Claim
40 words
A method according to claim 1, wherein step (e) comprises the step of etching said exposed prescribed surface portions of said first layer of desensitized photoresist material using said second layer of photolithographically patterned photoresist material as a mask thereof.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein step (e) comprises exposing the photoresist layer structure resulting from step (d) to a nonselective etching medium.
Claim 5
Dependent Claim
24 words
A method according to claim 1, wherein step (e) comprises exposing the photoresist layer structure resulting from step (d) to a reactive ion etch.
Claim 6
Dependent Claim
41 words
A method according to claim 1, wherein step (b) comprises exposing the entirety of said first layer of photoresist material to electromagnetic radiation and heating said first layer to thereby effectively desensitize first layer to the action of a developing agent.
Claim 7
Dependent Claim
40 words
A method according to claim 5, wherein step (e) comprises the step of etching said exposed prescribed surface portions of said first layer of desensitized photoresist material using said second layer of photolithographically patterned photoresist material as a mask thereof.
Claim 8
Dependent Claim
24 words
A method according to claim 5, wherein step (e) comprises exposing the photoresist layer structure resulting from step (d) to a reactive ion etch.
Claim 9
Dependent Claim
33 words
A method according to claim 1, wherein the thickness of said first layer of photoresist material is on the order of at least twice the thickness of said second layer of photoresist material.
Claim 10
Dependent Claim
24 words
A method according to claim 1, wherein each of said first and second layers of photoresist material is comprised of the same photoresist material.
Claim 11
Dependent Claim
29 words
A method according to claim 1, wherein the thickness of said first layer of photoresist material is such that the top surface of said first layer is substantially planarized.
Claim 12
Dependent Claim
41 words
A method according to claim 10, wherein step (b) comprises exposing the entirety of said first layer of photoresist material to electromagnetic radiation and heating said first layer to thereby effectively desensitize first layer to the action of a developing agent.
Claim 13
Dependent Claim
24 words
A method according to claim 5, wherein step (e) comprises exposing the photoresist layer structure resulting from step (d) to a reactive ion etch.
Claim 14
Dependent Claim
24 words
A method according to claim 12, wherein each of said first and second layers of photoresist material is comprised of the same photoresist material.
Claim 15
Dependent Claim
33 words
A method according to claim 13, wherein the thickness of said first layer of photoresist material is on the order of at least twice the thickness of said second layer of photoresist material.
Claim 16
Dependent Claim
59 words
A method according to claim 1, further including the step of (f), prior to step (e), treating one of said first and second photoresist layers to cause said layers to be etched at respectively different etching rates by a prescribed etching medium, and step (e) comprises exposing the photoresist layer structure resulting from step (d) to said etching medium.
Claim 17
Dependent Claim
24 words
A method according to claim 15, wherein step (e) comprises exposing the photoresist layer structure resulting from step (d) to a reactive ion etch.
Claim 18
Dependent Claim
41 words
A method according to claim 16, wherein step (b) comprises exposing the entirety of said first layer of photoresist material to electromagnetic radiation and heating said first layer to thereby effectively desensitize first layer to the action of a developing agent.
References Cited (Backward Citations)
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