Process for smoothing a non-planar surface

Claim 2

An improvement in the process of planarizing an integrated circuit structure in which an etchable photoresist layer is applied over an etchable layer to be planarized on an integrated circuit structure followed by dry etching of both layers by exposure of the structure to a high energy beam which comprises exposing the photoresist material to light prior to said etching by said high energy source whereby the surface of the planarized layer beneath the photoresist layer will be smooth after said high energy etching and removal of the photoresist.

Claim 3

The process of claim 1 wherein said exposure to light comprises exposure to UV light.

Claim 4

The process of claim 1 including the additional step of heating said photoresist material to a temperature of from about 150° to 200° C. for from about 5 to 30 minutes to cause said photoresist to flow over said structure prior to said exposure to UV light.

Claim 5

The process of claim 3 wherein said heating step is carried out at a temperature range of from about 160° to 170° C.

Claim 6

The process of claim 4 wherein said step of exposing the structure to a high energy source comprises etching the structure with a plasma etch to planarize the surface of the structure.

Claim 7

An improved planarization process for smoothing the topography of an integrated circuit structure using a dry etchant which comprises: (a) applying a layer of photoresist material over a layer of etchable material on said structure; (b) heating said photoresist material to a temperature of from about 150° to 200° C. to cause said photoresist material to flow over said structure; (c) protecting the surface of said layer of etchable material by exposing said photoresist material to UV light to alter said layer of photoresist; (d) dry etching said photoresist material and said etchable material with a high energy plasma etch; and (e) removing the remaining portions of said photoresist material; whereby the surface of the planarized layer of etchable material wil not be roughened by the effects of the high energy plasma beam.

Claim 8

An improved planarization process for smoothing the topography of an integrated circuit structure using a dry etchant which comprises: (a) applying a layer of photoresist material over a layer of etchable material on said structure; (b) heating said photoresist material to a temperature of from about 150° to 200° C. to cause said photoresist material to flow over said structure; (c) protecting the surface of said layer of etchable material by exposing said photoresist material to UV light to alter said layer of photoresist; (d) dry etching said photoresist material and said etchable material with a high energy plasma etch; and (e) removing the remaining portions of said photoresist material; whereby the surface of the planarized layer of etchable material wil not be roughened by the effects of the high energy plasma beam.

Claim 9

The process of claim 6 wherein said heating step is carried out at a temperature range of from about 160° to 170° C.

Claim 10

An improved planarization process for smoothing the topography of an integrated circuit structure which comprises: (a) applying a layer of positive photoresist material over a layer of etchable material on said structure; (b) heating said photoresist material to a temperature of from about 160° to 170° C. for a period of from 5 to 30 minutes to cause said photoresist material to flow over said structure; (c) exposing said photoresist material to UV light; (d) etching said photoresist material and said etchable material with a plasma etch; and (e) removing said photoresist material; whereby the resultant surface beneath said photoresist material will be smooth and relatively free of surface irregularities.

Claim 11

An improved planarization process for smoothing the topography of an integrated circuit structure which comprises: (a) applying a layer of positive photoresist material over a layer of etchable material on said structure; (b) heating said photoresist material to a temperature of from about 160° to 170° C. for a period of from 5 to 30 minutes to cause said photoresist material to flow over said structure; (c) exposing said photoresist material to UV light; (d) etching said photoresist material and said etchable material with a plasma etch; and (e) removing said photoresist material; whereby the resultant surface beneath said photoresist material will be smooth and relatively free of surface irregularities.

Claim 12

The process of claim 8 wherein said etchable material under said photoresist material comprises an oxide of silicon.