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US4651015A
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US
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Semiconductor imaging device utilizing static induction transistors
Assignee: Individual
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Filing: 1983-12-13
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Granted: 1987-03-17
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Expires: 2003-12-13
Abstract
Abstract A semiconductor imaging device having a wide dynamic range to provide optimum output response characteristics under various illuminating conditions. The device includes a single SIT (Static Induction Transistor) which has a pair of principal electrode regions of one conduction type disposed facing one another through a channel region made of high resistivity semiconductor material. First and second gate regions of the other conduction type are formed in contact with the channel region to control the current flow between the two principal electrode regions. The second gate is common to all pixels. The potential at the second gate region is made variable by a variable power supply, a variable resistor connected between the second gate region and ground, a variable capacitor connected between the second gate region and ground, or combinations of these elements.
Inventors
- 👤 Junichi Nishizawa
- 👤 Takashige Tamamushi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 17:33
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/196
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
150 words
A semiconductor imaging device comprising; an array of pixels, each comprising a static induction transistor which comprises a substrate constituting a source and having a source electrode connected thereto; a pair of principal electrode regions of one conduction type together constituting a drain and disposed facing each other through a channel region made of high resistivity semiconductor material; first and second gate regions of the other conduction type disposed so as to be in contact with said channel region for controlling current flow between said two principal electrode regions; an insulating layer constituting a capacitor and disposed on at least part of said first gate region; carriers generated by light excitation being stored in said first gate regions, said second gate region being electrically common to every two adjacent ones of said pixels; and means for regulating the potential at the second gate region differently from said first gate region.
Claim 2
Dependent Claim
150 words
A semiconductor imaging device comprising; an array of pixels, each comprising a static induction transistor which comprises a substrate constituting a source and having a source electrode connected thereto; a pair of principal electrode regions of one conduction type together constituting a drain and disposed facing each other through a channel region made of high resistivity semiconductor material; first and second gate regions of the other conduction type disposed so as to be in contact with said channel region for controlling current flow between said two principal electrode regions; an insulating layer constituting a capacitor and disposed on at least part of said first gate region; carriers generated by light excitation being stored in said first gate regions, said second gate region being electrically common to every two adjacent ones of said pixels; and means for regulating the potential at the second gate region differently from said first gate region.
Claim 3
Dependent Claim
26 words
The device according to claim 1 wherein said gate potential regulating means comprises an adjustable power source for applying a voltage to said second gate region.
Claim 4
Dependent Claim
24 words
The device according to claim 1, wherein said gate potential regulating means comprises a variable resistor connected between said second gate region and ground.
Claim 5
Dependent Claim
38 words
The device according to claim 1, wherein said gate potential regulating means comprises a resistor and a power source connected between said second gate region and ground, at least one of said resistor and power source being variable.
Claim 6
Dependent Claim
24 words
The device according to claim 1, wherein said gate potential regulating means comprises a variable capacitor connected between said second gate region and ground.
Claim 7
Dependent Claim
41 words
The device according to claim 1, wherein said gate potential regulating means comprises a variable resistance and an adjustable power source connected between said second gate region and ground, and a variable capacitor connected between said second gate region and ground.
Claim 8
Dependent Claim
14 words
The device according to claim 3, wherein said variable resistor comprises an active device.
Claim 9
Dependent Claim
14 words
The device according to claim 4, wherein said variable resistor comprises an active device.
Claim 10
Dependent Claim
14 words
The device according to claim 6, wherein said variable resistor comprises an active device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-16 | 1990-09-15 | 1991-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-16 | 1994-09-15 | 1995-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-16 | 1998-09-15 | 1999-03-17 | $7700.00 | Window Closed / Lapsed |