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US4650107A
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Method for the bubble-free joining of a large-area semiconductor component by means of soldering to a component part serving as substrate
Assignee: BBC Brown Boveri AG Switzerland
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Filing: 1985-11-15
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Granted: 1987-03-17
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Expires: 2005-11-15
Abstract
Abstract A large-area semiconductor component (1) is joined without bubbles by means of soldering to a substrate (2) by placing a perforated metallic intermediate layer (5) between the solder (3) before the soldering and the substrate (2) and the assembly is brought to soldering temperature under pressure and perpendicular to the soldering plane. During this process, the solder (4) completely fills the cavities between the components (1, 2) and (5) after the soldering and drives gas bubbles and any impurities to the periphery of the assembly, a constant distance being maintained between the semiconductor component (1) and the substrate (2). The intermediate layer (5) is preferably constructed as structured foil or as metallic fabric.
Inventors
- 👤 Helmut Keser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:08
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/20; H10W70/22; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/321; H10W72/351; H10W72/352; H10W72/353; H10W72/354
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
116 words
A method for the bubble-free joining of a large-area semiconductor component to a component part used as a substrate, comprising: (i) soldering by means of a solder foil, wherein a defined soldering gap is maintained between the semiconductor component and the substrate; (ii) maintaining said soldering gap constant throughout the soldering process by arranging a perforated metallic intermediate layer between the semiconductor component and the substrate, said perforated metallic intermediate layer having ducts for removing gases; and (iii) pressing on top of each other said semiconductor component, said perforated metallic intermediate layer, said solder foil and said substrate such that comparatively high pressures are generated at the respective support points of the perforated metallic intermediate layer.
Claim 2
Independent Claim
116 words
A method for the bubble-free joining of a large-area semiconductor component to a component part used as a substrate, comprising: (i) soldering by means of a solder foil, wherein a defined soldering gap is maintained between the semiconductor component and the substrate; (ii) maintaining said soldering gap constant throughout the soldering process by arranging a perforated metallic intermediate layer between the semiconductor component and the substrate, said perforated metallic intermediate layer having ducts for removing gases; and (iii) pressing on top of each other said semiconductor component, said perforated metallic intermediate layer, said solder foil and said substrate such that comparatively high pressures are generated at the respective support points of the perforated metallic intermediate layer.
Claim 3
Dependent Claim
107 words
The method according to claim 1, wherein a structured metal foil with a thickness of 0.1 to 0.2 mm is used as the intermediate layer which, seen in a direction of observation perpendicular to the soldering plane, has straight-line perforations, said perforations extending in a V-shape as far as a support ring delimiting the circumference, said perforations being used as ducts for deaerating the soldering gaps, and said perforations having a width of 2 to 5 mm and a spacing of 2.5 to 6 mm, said ducts being produced by stamping or etching and wherein the width of the remaining metal web is 0.2 to 1 mm.
Claim 4
Dependent Claim
35 words
The method according to claim 1, wherein a metallic fabric having a clear mesh size of 0.4 to 1.0 mm and a wire diameter of 0.1 to 0.2 mm is used as the intermediate layer.
Claim 5
Dependent Claim
33 words
The method according to claim 1, wherein a metal which is a member of the group consisting of Cu, Ag, Au and alloys thereof is used as the material for the intermediate layer.
Claim 6
Dependent Claim
39 words
The method according to claim 1, wherein the intermediate layer or the surface of the semiconductor component to be joined or the surface of the substrate is provided with a metallic coating, which promotes wetting, before the soldering process.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-16 | 1990-09-15 | 1991-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-16 | 1994-09-15 | 1995-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-16 | 1998-09-15 | 1999-03-17 | $7700.00 | Window Closed / Lapsed |