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US4641283A Expired / Lapsed US ⏱️ 0.0 years remaining

Circuit for reading bipolar storage cells

Assignee: Siemens AG
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Filing: 1983-07-15
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Granted: 1987-02-03
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Expires: 2003-07-15
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Abstract

Abstract A circuit for reading bipolar storage cells includes a storage element formed of two fed-back inverters, each of the inverters being formed of a multi-emitter transistor and a load element connected to a respective one of the multi-emitter transistors, two complementary bit-lines each being connected to one emitter of a respective one of the multi-emitter transistors, a first potential source, two bit-line current sources each being connected between the first potential source and a respective one of the complimentary bit-lines, a differential amplifier having two inputs, two read transistors each having a collector-emitter path connected between a respective one of the inputs of the differential amplifier and a respective one of the complimentary bit-lines, a second potential source, a read-current source connected to the second potential source, and two diode paths each connected between the read-current source and a respective one of the complimentary bit-lines.

Inventors

  • 👤 Wilhelm Wilhelm

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 10:25
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/413; G11C11/414; G11C11/416

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 190 words
Circuit for reading bipolar storage cell, comprising a storage element formed of two fed-back inverters, an upper and a lower word line, each of said inverters being formed of a multi-emitter transistor, each having a first and second emitter, and a load element connected between the upper word line and the collector of a respective one of said multi-emitter transistors, two complementary bit-lines each being connected to the first emitter of a respective one of said multi-emitter transistors, the second emitter being connected to said lower word line, a first potential source, two bit-line current sources each being connected between said first potential source and a respective one of said complementary bit lines, a differential amplifier having two inputs, two read transistors each having a collector-emitter path connected between a respective one of said inputs of said differential amplifier and a respective one of said complementary bit-lines, a second potential source, a read-current source connected between the base of said read transistors and said second potential source, and two resistance elements each being connected between the collector of a respective one of said read transistors and said read current source.
Claim 2
Dependent Claim 190 words
Circuit for reading bipolar storage cell, comprising a storage element formed of two fed-back inverters, an upper and a lower word line, each of said inverters being formed of a multi-emitter transistor, each having a first and second emitter, and a load element connected between the upper word line and the collector of a respective one of said multi-emitter transistors, two complementary bit-lines each being connected to the first emitter of a respective one of said multi-emitter transistors, the second emitter being connected to said lower word line, a first potential source, two bit-line current sources each being connected between said first potential source and a respective one of said complementary bit lines, a differential amplifier having two inputs, two read transistors each having a collector-emitter path connected between a respective one of said inputs of said differential amplifier and a respective one of said complementary bit-lines, a second potential source, a read-current source connected between the base of said read transistors and said second potential source, and two resistance elements each being connected between the collector of a respective one of said read transistors and said read current source.
Claim 3
Dependent Claim 33 words
Circuit according to claim 1, wherein O.5×I<I A <I, wherein I A as the current of the read current source, and I is the sum of the currents of the bit-line current sources.
Claim 4
Dependent Claim 198 words
Circuit according to claim 1, wherein said read-current source includes: a first series circuit of a first resistor connected to said second potential source, a diode, the collector-emitter path of a first transistor, a second resistor, and a first constant-current-source connected to said first potential source; a second series circuit of a third resistor connected to said second potential source, and a second constant-current-source connected to said first potential source; a second transistor having a collector terminal connected to said second potential source, an emitter terminal connected to the base terminal of said first transistor, and a base terminal connected to a junction point between said third resistor and said second constant-current source; and a third transistor having a collector terminal connected to the emitter terminal of said second transistor, an emitter terminal connected to a junction point between said second resistor and said first constant-current-source, and a base terminal connected to a junction point between said diode and the collector terminal of said first transistor said first resistor and said diode having a junction point therebetween forming a read-current output of said read-current source; and said first, second and third transistors all having the same conductivity type.

References Cited (Backward Citations)

US4204276A Cited
US4348747A Cited
US4409674A Cited
US4459686A Cited
US4456979A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-02-02 1990-08-04 1991-02-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-02-02 1994-08-04 1995-02-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-02-02 1998-08-04 1999-02-03 $7700.00 Window Closed / Lapsed

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