← Back to Patent Explorer
US4640438A Expired / Lapsed US ⏱️ 0.0 years remaining

Cover for semiconductor device packages

Assignee: Cominco Electronic Materials Inc
•
Filing: 1986-03-17
•
Granted: 1987-02-03
•
Expires: 2006-03-17
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Covers for semiconductor packages are made by diffusion pressure bonding a coated substrate to a preform at a temperature below the melting point of the preform alloy. An alloy preform is coated on one side with a thin layer of the preform alloy component that has a lower melting point than the preform alloy, preferably the lowest melting point. Coated substrate and coated preform are assembled and the assembly is compressed and heated below the melting point of the preform alloy but above the melting point of the preform coating to form a diffusion pressure bond between substrate and preform.

Inventors

  • 👤 Robert L. Trevison
  • 👤 William E. McKee
  • 👤 Larry B. Hunnel

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 05:17
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/17; H05; H05K; H05K5/00; H05K5/0091; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12229

Claims Analysis

Total Claims: 22
Claim 1
Independent Claim 184 words
A method for making a cover for a semiconductor package, which cover consists of a substrate made of a substrate alloy and having a substrate coating, and a preform made of a preform alloy consisting of two or more preform alloy components attached to said substrate, said method comprising the steps of applying a thin coating of a preform alloy component with a melting point lower than the melting point of the preform alloy to one side of said preform to form a coated preform, placing the coated preform in intimate contact with the substrate such that the coating on the preform contacts said substrate coating to form an assembly, applying a pressure to the assembly to form a compressed assembly, said pressure being insufficient to form a bond between the coated preform and the substrate coating without heating, and heating the compressed assembly to a temperature below the melting temperature of the preform alloy but above the melting temperature of the coating on the preform for a period of time sufficient to form a diffusion pressure bond between the substrate and the preform.
Claim 2
Independent Claim 184 words
A method for making a cover for a semiconductor package, which cover consists of a substrate made of a substrate alloy and having a substrate coating, and a preform made of a preform alloy consisting of two or more preform alloy components attached to said substrate, said method comprising the steps of applying a thin coating of a preform alloy component with a melting point lower than the melting point of the preform alloy to one side of said preform to form a coated preform, placing the coated preform in intimate contact with the substrate such that the coating on the preform contacts said substrate coating to form an assembly, applying a pressure to the assembly to form a compressed assembly, said pressure being insufficient to form a bond between the coated preform and the substrate coating without heating, and heating the compressed assembly to a temperature below the melting temperature of the preform alloy but above the melting temperature of the coating on the preform for a period of time sufficient to form a diffusion pressure bond between the substrate and the preform.
Claim 3
Dependent Claim 21 words
A method as claimed in claim 1, wherein the pressure is in the range of about 20 to 30 inch pounds.
Claim 4
Dependent Claim 22 words
A method as claimed in claim 1, wherein the period of time is in the range of about 10 to 120 minutes.
Claim 5
Dependent Claim 22 words
A method as claimed in claim 3, wherein the period of time is in the range of about 30 to 60 minutes.
Claim 6
Dependent Claim 19 words
A method as claimed in claim 1, wherein said heating is conducted in the presence of an inert gas.
Claim 7
Dependent Claim 25 words
A method as claimed in claim 1, wherein the coating on the preform has a thickness in the range of about 25 to 50 microinches.
Claim 8
Dependent Claim 28 words
A method as claimed in claim 1, wherein the substrate alloy is an alloy chosen from the group consisting of iron-nickel alloys, cobalt-iron-nickel alloys, Alloy 42 and KOVAR.
Claim 9
Dependent Claim 53 words
A method as claimed in claim 1, wherein the preform alloy is an alloy chosen from the group consisting of gold-tin alloys, lead-tin alloys, lead-indium alloys, tin-silver alloys, lead-indium-silver alloys and lead-tin-silver alloys, said alloys having a composition with a melting point above the melting point of at least one preform alloy component.
Claim 10
Dependent Claim 34 words
A method as claimed in claim 8, wherein the preform is coated with a thin coating of the preform alloy component that has the lowest melting point of the components of the preform alloy.
Claim 11
Dependent Claim 32 words
A method as claimed in claim 1, wherein the substrate alloy is KOVAR, the preform alloy is a gold-tin alloy and the preform alloy is coated with a thin layer of tin.
Claim 12
Dependent Claim 68 words
A method as claimed in claim 1, wherein the substrate alloy is KOVAR, the substrate has a coating of gold, having a thickness in the range of about 50 to 300 microinches, the preform alloy is a gold-tin alloy containing about 20% tin and the preform alloy has a coating of tin, said coating of tin having a thickness in the range of about 25 to 50 microinches.
Claim 13
Dependent Claim 20 words
A method as claimed in claim 11, wherein the assembly is heated at a temperature controlled at about 260° C.
Claim 14
Dependent Claim 126 words
A method as claimed in claim 11, wherein the preform alloy is a gold-tin alloy containing about 19% tin, the preform alloy has a coating of tin having a thickness in the range of about 25 to 50 microinches, the substrate coating of gold has a thickness in the range of about 100 to 200 microinches and the thickness of the coating of tin and the thickness of the substrate coating are sufficient to form a diffusion pressure bond between at least a portion of the substrate coating of gold on the substrate, the coating of tin on the preform and the preform alloy, so that the composition of the preform after forming the diffusion pressure bond is a substantially eutectic composition containing about 20% tin.
Claim 15
Dependent Claim 95 words
A cover for a package for semiconductor devices comprising: a cover substrate having a coating on one side thereof selected from at least one of the group consisting of gold and nickel, and a preform made of an alloy selected from the group consisting of gold-tin alloys, lead-tin alloys, lead-indium alloys, tin-silver alloys, lead-indium-silver alloys and lead-tin-silver alloys, said preform having a coating on one side thereof of a preform alloy component having a melting point lower than the melting point of the preform alloy, said preform being diffusion pressure bonded to the cover substrate.
Claim 16
Dependent Claim 95 words
A cover for a package for semiconductor devices comprising: a cover substrate having a coating on one side thereof selected from at least one of the group consisting of gold and nickel, and a preform made of an alloy selected from the group consisting of gold-tin alloys, lead-tin alloys, lead-indium alloys, tin-silver alloys, lead-indium-silver alloys and lead-tin-silver alloys, said preform having a coating on one side thereof of a preform alloy component having a melting point lower than the melting point of the preform alloy, said preform being diffusion pressure bonded to the cover substrate.
Claim 17
Dependent Claim 27 words
A cover as claimed in claim 14 wherein said substrate is an alloy selected from the group consisting of iron-nickel alloys, cobalt-iron-nickel alloys, Alloy 42 and KOVAR.
Claim 18
Dependent Claim 85 words
A cover as claimed in claim 15, wherein said substrate has a coating of gold having a thickness in the range of about 50 to 300 microinches, said preform alloy is a gold-tin alloy containing about 19% tin, and said coating on one side of the preform is tin having a thickness in the range of about 25 to 50 microinches prior to diffusion pressure bonding of the preform to the cover, to produce a preform having a substantially eutectic composition containing about 20% tin.
Claim 19
Dependent Claim 31 words
A cover as claimed in claim 16 for hermetically sealing a package for semiconductor devices wherein said preform is a rectangularly shaped frame contiguous with the periphery of the cover substrate.
Claim 20
Dependent Claim 119 words
A cover as claimed in claim 14 wherein said preform has been diffusion pressure bonded to the cover substrate by placing the coated preform in intimate contact with the substrate such that the coating on the preform contacts said substrate coating to form an assembly, applying a pressure to the assembly to form a compressed assembly, said pressure being insufficient to form a bond between the coated preform and the substrate coating without heating, and heating the compressed assembly to a temperature below the melting temperature of the preform alloy but above the melting temperature of the coating on the preform for a period of time sufficient to form a diffusion pressure bond between the substrate and the preform.
Claim 21
Dependent Claim 41 words
A cover for a package for semiconductor devices comprising: a cover substrate having a gold coating on one side thereof and a preform made of a gold-tin alloy having a coating of tin thereon diffusion pressure bonded to the cover substrate.
Claim 22
Dependent Claim 41 words
A cover for a package for semiconductor devices comprising: a cover substrate having a gold coating on one side thereof and a preform made of a gold-tin alloy having a coating of tin thereon diffusion pressure bonded to the cover substrate.

References Cited (Backward Citations)

US3823468A Cited
US3874549A Cited
US3946190A Cited
US4331253A Cited
US4356047A Cited
US4331258A Cited
US4560084A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-02-02 1990-08-04 1991-02-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-02-02 1994-08-04 1995-02-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-02-02 1998-08-04 1999-02-03 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag