Patent US4370037A successfully refreshed from Google Patents.
Patent US4638345A successfully refreshed from Google Patents.
US4638345A
Expired / Lapsed
US
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IR imaging array and method of making same
Assignee: RCA Corp
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Filing: 1983-06-01
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Granted: 1987-01-20
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Expires: 2003-06-01
Abstract
Abstract An array of infra-red (IR) detectors for a CCD image sensor includes a plurality of spaced areas of a conductive material at the surface of a substrate of semiconductor material of one conductivity type with each conductive area forming a Schottky-barrier diode with the substrate to form the IR detectors. Each detector includes a high conductivity contact region within the substrate. Between the detector area is a guard band which consists of a region of a conductivity type opposite to that of the substrate within the substrate and around said detector area. The guard band is spaced from the contact regions and each conductive area overlaps a portion of its adjacent guard band.
Inventors
- 👤 Hammam Elabd
- 👤 Walter F. Kosonocky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:04
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/157; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
141 words
An array of infra-red detectors comprising a substrate of single crystal silicon of one conductivity type, a plurality of spaced apart detector areas of a conductive material at one surface of said substrate with each of said conductive areas forming a Schottky-barrier junction with said substrate, each conductive area including a conductive coupling region of a conductivity type opposite to that of the substrate within the substrate under and in contact with a portion of the conductive material, and means between adjacent detector areas isolating said areas from each other, said isolating means consisting of a region of a conductivity type opposite to that of the substrate in said substrate and extending along said one surface between said areas with each of said areas contacting said region, said region extending around the conductive areas and being spaced from the coupling regions.
Claim 2
Dependent Claim
141 words
An array of infra-red detectors comprising a substrate of single crystal silicon of one conductivity type, a plurality of spaced apart detector areas of a conductive material at one surface of said substrate with each of said conductive areas forming a Schottky-barrier junction with said substrate, each conductive area including a conductive coupling region of a conductivity type opposite to that of the substrate within the substrate under and in contact with a portion of the conductive material, and means between adjacent detector areas isolating said areas from each other, said isolating means consisting of a region of a conductivity type opposite to that of the substrate in said substrate and extending along said one surface between said areas with each of said areas contacting said region, said region extending around the conductive areas and being spaced from the coupling regions.
Claim 3
Dependent Claim
22 words
An array in accordance with claim 1 in which each of the conductive areas overlaps a portion of the adjacent isolation region.
Claim 4
Dependent Claim
18 words
An array in accordance with claim 1 in which each of said conductive areas is a conductive silicide.
Claim 5
Dependent Claim
28 words
An array in accordance with claim 1 in which the periphery of each of the conductive areas overlaps a portion of the isolation region around said conductive area.
Claim 6
Dependent Claim
35 words
An array in accordance with claim 4 including a layer of an insulating material over said one surface of the substrate and a reflective metal layer on the insulating layer and over the detector areas.
Claim 7
Dependent Claim
31 words
An array in accordance with claim 1 in which the isolation region is a region containing a relatively low amount of conductivity modifier so as to be of relatively high resistance.
Claim 8
Dependent Claim
25 words
An array in accordance with claim 6 in which the substrate is of P type conductivity and the isolation region is of N- type conductivity.
References Cited (Backward Citations)
US4089020A
Cited
US4040076A
Cited
US4063964A
Cited
US4119446A
Cited
US4261095A
Cited
GB2103875A
Cited
JPS58157177A
Cited
US4533933A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-19 | 1990-07-21 | 1991-01-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-19 | 1994-07-21 | 1995-01-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-19 | 1998-07-21 | 1999-01-20 | $7700.00 | Window Closed / Lapsed |