US4119446A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a guarded Schottky barrier diode by ion-implantation
Assignee: Motorola Solutions Inc
•
Filing: 1977-08-11
•
Granted: 1978-10-10
•
Expires: 1997-08-11
Abstract
Abstract An improved method for forming a guard ring Schottky barrier diode using ion implantation. Diodes formed in accordance with this method require less area but exhibit breakdown voltage comparable to known prior art guarded Schottky barrier diodes. The method is especially applicable to the fabrication of monolithic integrated circuits.
Inventors
- 👤 Sal Thomas Mastroianni
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:50
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D8/00; H10D8/60; H10P30/21; H10P30/212; H10P30/22
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
50 words
A method for forming on a semiconductor substrate portion of first conductivity type a metal-semiconductor diode surrounded directly by a doped-guard ring of second conductivity-type and further surrounded directly by an insulating layer on said substrate, comprising ion-implanting said substrate through said insulating layer using said metal as a mask.
Claim 2
Independent Claim
50 words
A method for forming on a semiconductor substrate portion of first conductivity type a metal-semiconductor diode surrounded directly by a doped-guard ring of second conductivity-type and further surrounded directly by an insulating layer on said substrate, comprising ion-implanting said substrate through said insulating layer using said metal as a mask.
Claim 3
Dependent Claim
17 words
The method of claim 1 further including providing an implant mask surrounding and spaced from said metal.
Claim 4
Dependent Claim
15 words
The method of claim 1 where an aperture in said insulator delineates said metal-semiconductor diode.
Claim 5
Dependent Claim
16 words
The method of claim 2 where said spacing is uniform about the periphery of the diode.
Claim 6
Dependent Claim
15 words
The method of claim 2 where an aperture in said insulator delineates said metal-semiconductor diode.
Claim 7
Independent Claim
82 words
A method for forming a guarded Schottky barrier diode on a semiconductor substrate covered by an insulator comprising: forming a first aperture in said insulating layer; forming a metal semiconductor diode coextensive with said aperture; forming a masking layer over said insulator; providing a second aperture in said masking layer, said second aperture being an oversize replica of said first aperture; and doping said substrate through second aperture and said insulating layer to provide a junction guard ring surrounding said metal-semiconductor diode.
Claim 8
Independent Claim
82 words
A method for forming a guarded Schottky barrier diode on a semiconductor substrate covered by an insulator comprising: forming a first aperture in said insulating layer; forming a metal semiconductor diode coextensive with said aperture; forming a masking layer over said insulator; providing a second aperture in said masking layer, said second aperture being an oversize replica of said first aperture; and doping said substrate through second aperture and said insulating layer to provide a junction guard ring surrounding said metal-semiconductor diode.
Claim 9
Dependent Claim
18 words
The method of claim 6 where said junction guard ring is in precise alignment with said metal-semiconductor diode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-09 | 1982-04-10 | 1982-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-09 | 1986-04-10 | 1986-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-09 | 1990-04-10 | 1990-10-10 | $7700.00 | Window Closed / Lapsed |