Patent US4636664A successfully refreshed from Google Patents.
US4636664A
Expired / Lapsed
US
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Current sinking responsive MOS sense amplifier
Assignee: MagnaChip Semiconductor Ltd
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Filing: 1985-02-25
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Granted: 1987-01-13
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Expires: 2005-02-25
Abstract
Abstract A sense amplifier for a read only memory array which is formed from a multiplicity of NAND organized FET stacks. The sense amplifier compares the current sinking capacity of a selected bit line stack with that of a reference stackline, the difference being detected as a voltage shift in a differential stage. Pass FETs with gate electrodes biased in inverse proportion to the bit and reference line potentials are serially connected between the corresponding lines and reference nodes.
Inventors
- 👤 Donald G. Craycraft
- 👤 Giao N. Pham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 07:34
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/06; G11C7/062; G11C17/00; G11C17/08; G11C17/10; G11C17/12; G11C17/123; G11C7/14; G11C7/18
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
125 words
A sensing amplifier responsive to the difference in current sinking capacity between an input line and a reference line, comprising: means for generating a first constant current to a first reference node; means for generating a second constant current to a second reference node; a first pass FET conductively connected between said input line and said first reference node, and having its gate electrode biased in inverse proportion to the potential on said input line; a second pass FET conductively connected between said reference line and said second reference node, and having its gate electrode biased in inverse proportion to the potential on said reference line; and means for detecting a difference in the current sinking capacity between said input line and said reference line.
Claim 2
Dependent Claim
125 words
A sensing amplifier responsive to the difference in current sinking capacity between an input line and a reference line, comprising: means for generating a first constant current to a first reference node; means for generating a second constant current to a second reference node; a first pass FET conductively connected between said input line and said first reference node, and having its gate electrode biased in inverse proportion to the potential on said input line; a second pass FET conductively connected between said reference line and said second reference node, and having its gate electrode biased in inverse proportion to the potential on said reference line; and means for detecting a difference in the current sinking capacity between said input line and said reference line.
Claim 3
Dependent Claim
19 words
The sensing amp recited in claim 1, further comprising: means for precharging said input line and said reference line.
Claim 4
Dependent Claim
63 words
The sensing amp recited in claim 2, wherein: said means for detecting a difference in the current sinking capacity is a differential amplifier responsive to a difference between said first reference node potential and said second reference node potential; and the nominal potential on said first reference node is offset by a fixed difference from the nominal potential on said second reference node.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-12 | 1990-07-14 | 1991-01-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-12 | 1994-07-14 | 1995-01-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-12 | 1998-07-14 | 1999-01-13 | $7700.00 | Window Closed / Lapsed |