US4633292A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor component with planar structure
Assignee: Siemens AG
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Filing: 1986-02-10
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Granted: 1986-12-30
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Expires: 2006-02-10
Abstract
Abstract Planar semiconductor component which has a substrate of one conduction type, and a contact-connected zone of opposite conductivity type embedded in the surface of the substrate in planar fashion and having a part thereof emerging to the surface. It also has a control electrode covering that part of the contact-connected contacted zone which emerges to the surface, an insulating layer on the surface, an edge electrode seated on the insulating layer at the edge of the substrate and electrically connected to the substrate, and at least one protective ring zone of the opposite conductivity type positioned between the edge of the substrate and the contact-connected zone and embedded in planar fashion in the surface. The ring zone includes at least one conducting layer completely covering a part of the substrate emerging to the surface between the protective ring zone and the contacted zone, wherein the conducting layer is electrically insulated from the emerging part of the substrate, and electrically contacted by one of the contact-connected protective ring zones embedded in planar fashion in the substrate surface.
Inventors
- 👤 Christine Fellinger
- 👤 Ludwig Leipold
- 👤 Jeno Tihanyi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/665; H10D64/00; H10D64/111; H10D64/112; H10D84/00; H10D84/101; H10D84/141; H10D84/148
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
201 words
Planar semiconductor component comprising a substrate of a first conduction type having a surface, a contacted zone of opposite conduction type planarly embedded in and emerging to the surface of the substrate and having a control electrode overlapping a part of the contacted zone, an insulating layer disposed on the surface, and at least two protective ring zones of the opposite conduction type disposed between the edge of the substrate and the contacted zone; at least two conducting layers, each contacting a respective one of said ring zones, said conducting layers being electrically insulated from said substrate and covering the part thereof that reaches the surface; at least one further conducting layer covering the substrate at the part thereof that reaches the surface between the contacted zone and the protective ring zone nearest the contacted zone; and wherein the distance between adjacent protective ring zones is less than the distance between the contacted zone and the protective ring zone nearest thereto; and wherein the distance from each protective ring zone, in direction toward the edge of the substrate, to the next protective ring zone is less than the distance to the nearest protective ring zone in direction toward the contacted zone.
Claim 2
Dependent Claim
201 words
Planar semiconductor component comprising a substrate of a first conduction type having a surface, a contacted zone of opposite conduction type planarly embedded in and emerging to the surface of the substrate and having a control electrode overlapping a part of the contacted zone, an insulating layer disposed on the surface, and at least two protective ring zones of the opposite conduction type disposed between the edge of the substrate and the contacted zone; at least two conducting layers, each contacting a respective one of said ring zones, said conducting layers being electrically insulated from said substrate and covering the part thereof that reaches the surface; at least one further conducting layer covering the substrate at the part thereof that reaches the surface between the contacted zone and the protective ring zone nearest the contacted zone; and wherein the distance between adjacent protective ring zones is less than the distance between the contacted zone and the protective ring zone nearest thereto; and wherein the distance from each protective ring zone, in direction toward the edge of the substrate, to the next protective ring zone is less than the distance to the nearest protective ring zone in direction toward the contacted zone.
Claim 3
Dependent Claim
50 words
Semiconductor component according to claim 1 wherein said contacted zone is contacted by a first one of said further conducting layers and wherein said first one of said further conducting layers covers the part of the substrate surface disposed between the contact zone and the protective ring zone nearest thereto.
Claim 4
Dependent Claim
61 words
MIS semiconductor component according to claim 2, wherein said conducting layers respectively connected to said protective ring zones and are connected, respectively, to a field plate overlapping the substrate on the side facing the edge electrode, the field plate of said first-mentioned protective ring zone being overlapped by and electrically insulated from the conducting layer contacting said other protective ring zone.
Claim 5
Dependent Claim
32 words
MIS semiconductor component according to claim 3, wherein the field plate of the protective ring zone adjacent to the edge electrode is overlapped by the edge electrode and is electrically insulated therefrom.
Claim 6
Dependent Claim
22 words
MIS semiconductor component according to claim 3 wherein said conducting layers are formed of aluminum, and said field plates of doped polysilicon.
Claim 7
Dependent Claim
88 words
Planar semiconductor component according to claim 1 wherein a second one of said further conducting layers is said control electrode, and wherein a first one of the further conducting layers is contacting said contacted zone and wherein the conducting layer that contacts the protective ring zone nearest the contacted zone jointly with the first one of the further conducting layers and with the control electrode cover that part of the substrate surface that is disposed between the contacted zone and the protective ring zone nearest the contacted zone.
Claim 8
Dependent Claim
17 words
Planar semiconductor component according to claim 1 further comprising an edge electrode electrically connected to the substrate.
Claim 9
Dependent Claim
39 words
Planar semiconductor component according to claim 2 wherein the conducting layers contacting the protective ring zones are mutually overlapping above the part of the substrate that emerges to the surface, said overlapping layers being electrically insulated from one another.
Claim 10
Dependent Claim
52 words
Planar semiconductor component according to claim 8 wherein at least one of said further conducting layers includes a field plate positioned where it overlaps another one of said conducting layers, and wherein said field plate is composed of an electrically conducting material being different from the material forming said further conducting layer.
Claim 11
Dependent Claim
32 words
Planar semiconductor component according to claim 7 wherein said edge electrode includes a conducting layer which overlaps the conducting layer that is contacting the protective ring nearest the edge of the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-29 | 1990-06-30 | 1990-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-29 | 1994-06-30 | 1994-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-29 | 1998-06-30 | 1998-12-30 | $7700.00 | Window Closed / Lapsed |