JPS5265682A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
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Filing: 1975-11-28
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Granted: —
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Expires: 1995-11-28
Abstract
Abstract PURPOSE: To obtain an IGFET of higher dielectric strength of drain by forming a aprt of gate electrode directly under source electrode via a thin insulating film and positioning the gate electrode end on the drian side inward from the source electrode end at least for a distance determined by the soruce electrode end and substrate surface. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Takeaki Okabe
- 👤 Isao Yoshida
- 👤 Junichiro Kagami
- 👤 Shikayuki Ochi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 00:47
CPC Classifications
—
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