Abstract A semiconductor memory device including a first MIS transistor having source and drain regions formed in a substrate and a gate electrode provided on the substrate through an insulating layer; a semiconductor layer provided on the first MIS transistor through the insulating layer and being in contact with the source and drain regions of the first MIS transistor; a second MIS transistor having source and drain regions formed in the semiconductor layer and being in contact with the source and drain regions of the first MIS transistor and having a gate electrode provided on the semiconductor layer through an insulating layer; and a bit line being in contact with the source or drain region of the second MIS transistor and extended on the second MIS transistor; each gate electrode of the first and the second MIS transistors being connected with different word lines respectively, and impurities having an amount more than a required value being doped to at least one of the substrate and the semiconductor layer below the gate electrode of the first MIS transistor and the semiconductor.
A semiconductor memory device comprising: a first MIS transisor having source and drain regions formed in a substrate and a first gate electrode provided on the substrate through an insulating layer; a semiconductor layer provided on the first MIS transistor through the insulating layer and being in contact with the source and drain regions of the first MIS transistor; a second MIS transistor having a second gate electrode provided on the semiconductor layer and having source and drain regions formed in the semiconductor layer and being in contact with the source and drain regions of the first MIS transistor and having a gate electrode provided on the semiconductor layer through an insulating layer; and a bit line being in contact with the source or drain region of the second MIS transistor and extended on the second MIS transistor; each gate electrode of the first and the second MIS transistors being connected with different word lines respectively.
Claim 2
Dependent Claim
156 words
A semiconductor memory device comprising: a first MIS transisor having source and drain regions formed in a substrate and a first gate electrode provided on the substrate through an insulating layer; a semiconductor layer provided on the first MIS transistor through the insulating layer and being in contact with the source and drain regions of the first MIS transistor; a second MIS transistor having a second gate electrode provided on the semiconductor layer and having source and drain regions formed in the semiconductor layer and being in contact with the source and drain regions of the first MIS transistor and having a gate electrode provided on the semiconductor layer through an insulating layer; and a bit line being in contact with the source or drain region of the second MIS transistor and extended on the second MIS transistor; each gate electrode of the first and the second MIS transistors being connected with different word lines respectively.
Claim 3
Dependent Claim
19 words
A device according to claim 1, wherein said given conductivity type semiconductor substrate is a p type semiconductor substrate.
Claim 4
Dependent Claim
25 words
A device according to claim 1, wherein high concentration impurities are implanted into either said semiconductor substrate or said semiconductor layer under said gate electrodes.
Claim 5
Dependent Claim
38 words
A device according to claim 3, wherein said implantation of high concentration impurities is carried out by using boron ions of a dosage of about 2×10 13 atoms per cm 2 at an energy of about 800 KeV.
Claim 6
Dependent Claim
25 words
A device according to claim 1, wherein low concentration impurities are implanted into either said semiconductor substrate or said semiconductor layer under said gate electrodes.
Claim 7
Dependent Claim
38 words
A device according to claim 5, wherein said implantation of low concentration impurities is carried out by using boron ions of a dosage of about 2×10 13 atoms per cm 2 at an energy of about 150 KeV.