US4623908A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film transistors
Assignee: Seiko Epson Corp
•
Filing: 1983-03-31
•
Granted: 1986-11-18
•
Expires: 2003-03-31
Abstract
Abstract The thin film transistor comprises a plurality of individual thin film transistors on a common insulating substrate with the plurality of individual thin film transistors being connected together in series. The gate electrode of each individual transistor of the plurality of thin film transistors is connected to form one common gate electrode for the overall transistor. Leakage current in the OFF condition is substantially reduced. Identical performance is achieved from the transistor with interchangeability in designating source and drain terminals, when a symmetry is provided such that the i-th transistor in a series of N is physically identical to the (N-i+1)-th transistor in the overall transistor.
Inventors
- 👤 Hiroyuki Oshima
- 👤 Toshimoto Kodaira
- 👤 Toshihiko Mano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:20
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6733; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; G09; G09G; G09G3/00; G09G3/20; G09G3/34; G09G3/36; G09G3/3611; G09G3/3648; G09G3/3674; G09G3/3677; G09G3/3685; G09G3/3688; G11; G11C; G11C19/00; G11C19/18; G11C19/182; G11C19/184; H10D86/00; G02F1/13624; G09G2300/00; G09G2300/08; G09G2300/0809; G09G2300/0823; G09G2320/00; G09G2320/02; G09G2320/0209; G09G2320/0214; Y; Y02; Y02A; Y02A40/00; Y02A40/80; Y02A40/81
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
92 words
A low-leakage thin film transistor comprising: an insulating substrate comprising a material from the group consisting of glass quartz; a plurality of thin film transistors formed of non-monocrystalline silicon on the insulating substrate, the source-drain paths of the thin film transistors being connected in series to provide one source electrode and one drain electrode, the gate electrodes of the thin film transistors being connected to form one common date electrode wherein the leakage current of the thin film transistor does not substantially increase when negative voltage is increasingly applied to the gate.
Claim 2
Dependent Claim
92 words
A low-leakage thin film transistor comprising: an insulating substrate comprising a material from the group consisting of glass quartz; a plurality of thin film transistors formed of non-monocrystalline silicon on the insulating substrate, the source-drain paths of the thin film transistors being connected in series to provide one source electrode and one drain electrode, the gate electrodes of the thin film transistors being connected to form one common date electrode wherein the leakage current of the thin film transistor does not substantially increase when negative voltage is increasingly applied to the gate.
Claim 3
Dependent Claim
67 words
A thin film transistor as claimed in claim 1, wherein the number of interconnected thin film transistors is N, N being greater than or equal to 2, and wherein the i-th thin film transistor, counting from either the source electrode or the drain electrode, is of the same physical construction as the (N-i+1)th counting in series from the same side, where i=1, 2 . . . N.
Claim 4
Dependent Claim
20 words
A thin film transistor in accordance with claim 1 wherein the material of the plurality of transistors comprises polycrystalline silicon.
Claim 5
Dependent Claim
83 words
A low-leakage thin film transistor comprising; an insulating substrate; a plurality of thin film polycrystalline silicon transistors on the insulating substrate, the source-drain paths of the plurality of thin film transistors connected in series to provide one source electrode and one drain electrode, the gate electrodes of the plurality of thin film transistors being connected to form one common gate electrode, wherein the leakage current of the thin film transistor does not substantially increase when negative voltage is increasingly applied to the gate.
Claim 6
Dependent Claim
83 words
A low-leakage thin film transistor comprising; an insulating substrate; a plurality of thin film polycrystalline silicon transistors on the insulating substrate, the source-drain paths of the plurality of thin film transistors connected in series to provide one source electrode and one drain electrode, the gate electrodes of the plurality of thin film transistors being connected to form one common gate electrode, wherein the leakage current of the thin film transistor does not substantially increase when negative voltage is increasingly applied to the gate.
Claim 7
Dependent Claim
67 words
The thin film transistor of claim 4, wherein the number of interconnected thin film transistors is N, N being greater than or equal to 2, and wherein the i-th thin film transistor, counting from either the source electrode or the drain electrode is of the same physical construction as the (N-i+1)th thin film transistor, counting in series from the same electrode, where i=1,2 . . . N.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-17 | 1990-05-19 | 1990-11-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-17 | 1994-05-19 | 1994-11-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-17 | 1998-05-19 | 1998-11-18 | $7700.00 | Window Closed / Lapsed |