US4622082A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Conditioned semiconductor substrates
Assignee: SunEdison Inc
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Filing: 1984-06-25
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Granted: 1986-11-11
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Expires: 2004-06-25
Abstract
Abstract N+ type semiconductor substrates containing oxygen are thermally treated to enhance internal gettering capabilities by heating at 1050 DEG to 1200 DEG C., then at 500 DEG to 900 DEG C. and finally at 950 DEG to 1250 DEG C.
Inventors
- 👤 William Dyson
- 👤 Jon A. Rossi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:35
CPC Classifications
H; H10; H10P; H10P36/00; H10P36/20; Y; Y10; Y10S; Y10S148/00; Y10S148/06
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
70 words
A process for thermally conditioning oxygen containing n+ type semiconductor materials to enhance their internal gettering characteristics comprising heating said material at a temperature of 1050° to 1200° C. in an oxidizing atmosphere for a sufficient period of time to denude the surface region of oxygen and then at a temeprature of 500° to 900° C. in a reducing atmosphere for a sufficient period of time to nucleate the oxygen.
Claim 2
Dependent Claim
70 words
A process for thermally conditioning oxygen containing n+ type semiconductor materials to enhance their internal gettering characteristics comprising heating said material at a temperature of 1050° to 1200° C. in an oxidizing atmosphere for a sufficient period of time to denude the surface region of oxygen and then at a temeprature of 500° to 900° C. in a reducing atmosphere for a sufficient period of time to nucleate the oxygen.
Claim 3
Dependent Claim
16 words
The process of claim 1 wherein said semiconductor material has a polysilicon layer on the backside.
Claim 4
Dependent Claim
17 words
The process of claim 2 wherein said polysilicon layer has a thickness of 0.05 to 2.0 microns.
Claim 5
Dependent Claim
13 words
The process of claim 1 wherein said semiconductor material is n+ type silicon.
Claim 6
Dependent Claim
10 words
The process of claim 4 wherein said silicon contains antimony.
Claim 7
Dependent Claim
14 words
The process of claim 5 wherein said silicon contains 10 to 40 ppma oxygen.
Claim 8
Dependent Claim
32 words
The process of claim 1 further comprising heating said material at a temperature of 900° to 1150° C. in an inert atmosphere for a sufficient period of time to precipitate the oxygen.
Claim 9
Dependent Claim
39 words
The process of claim 1 wherein said sufficient period of time to denude the surface region of oxygen is 15 minutes to 6 hours and said sufficient period of time to nucleate the oxygen is at least 30 minutes.
Claim 10
Dependent Claim
20 words
The process of claim 7 wherein said sufficient period of time to precipitate the oxygen is up to 12 hours.
Claim 11
Dependent Claim
11 words
The process of claim 7 wherein said inert atmosphere is nitrogen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-10 | 1990-05-12 | 1990-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-10 | 1994-05-12 | 1994-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-10 | 1998-05-12 | 1998-11-11 | $7700.00 | Window Closed / Lapsed |