Patent US4566119A successfully refreshed from Google Patents.
Patent US4618874A successfully refreshed from Google Patents.
US4618874A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state imaging device
Assignee: Toshiba Corp
•
Filing: 1984-09-06
•
Granted: 1986-10-21
•
Expires: 2004-09-06
Abstract
Abstract There is disclosed a solid state imaging device comprising P + regions formed in photo-electro converting element regions and the separating region defined therebetween, respectively, the P + regions being continuous to each other and defining no step portion therebetween. There is also disclosed a method of manufacturing the imaging device, the method comprising a step of forming P + regions in photo-electro converting element regions and the separating region defined therebetween, respectively.
Inventors
- 👤 Tetsuo Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:21
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
126 words
A semiconductor device in a solid state imaging device comprising: a semiconductor layer of a first conductivity type; one or more photo-electro converting elements, of a second conductivity type, formed in said semiconductor layer, said converting elements being arranged in a predetermined pattern; one or more charge transfer elements, of said second conductivity type, formed in said semiconductor layer, said charge transfer elements transferring charges generated in said converting elements; and one or more further elements of said first conductivity type for suppressing the flow of dark current through the surface of said semiconductor layer, said further elements being formed in said photo-electro converting elements and in the separating region defined therebetween, said further elements having an impurity concentration higher than that of said semiconductor layer.
Claim 2
Dependent Claim
126 words
A semiconductor device in a solid state imaging device comprising: a semiconductor layer of a first conductivity type; one or more photo-electro converting elements, of a second conductivity type, formed in said semiconductor layer, said converting elements being arranged in a predetermined pattern; one or more charge transfer elements, of said second conductivity type, formed in said semiconductor layer, said charge transfer elements transferring charges generated in said converting elements; and one or more further elements of said first conductivity type for suppressing the flow of dark current through the surface of said semiconductor layer, said further elements being formed in said photo-electro converting elements and in the separating region defined therebetween, said further elements having an impurity concentration higher than that of said semiconductor layer.
Claim 3
Dependent Claim
33 words
A semiconductor device according to claim 1, wherein the solid stage imaging device further comprises a semiconductor substrate having a second conductivity type, and said semiconductor layer is formed on said semiconductor substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-20 | 1990-04-21 | 1990-10-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-20 | 1994-04-21 | 1994-10-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-20 | 1998-04-21 | 1998-10-21 | $7700.00 | Window Closed / Lapsed |