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US4617653A
Expired / Lapsed
US
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Semiconductor memory device utilizing multi-stage decoding
Assignee: Fujitsu Ltd
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Filing: 1983-12-28
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Granted: 1986-10-14
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Expires: 2003-12-28
Abstract
Abstract A semiconductor memory device includes a plurality of memory cells arranged in a matrix form and a decoder circuit selecting a row of the matrix in response to an address signal. The decoder circuit includes a first-stage decoder having a plurality of first-stage decoding elements and a second-stage decoder having a plurality of second-stage decoding elements. Each first-stage decoding element is connected to a plurality of second-stage decoding elements. Each of the first-stage decoding elements receives predetermined higher bits of the address signals. One of the first-stage decoding elements is selected upon one access command. Each of the plurality of second-stage decoding elements receives the address signals. One of the rows of the matrix is selected in response to the the address signals when the corresponding first-stage decoding element operates, whereby the power consumption is reduced.
Inventors
- 👤 Yasuro Matsuzaki
- 👤 Toshitaka Fukushima
- 👤 Kouji Ueno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:41
CPC Classifications
G; G11; G11C; G11C8/00; G11C8/10; G11C8/12
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
138 words
A semiconductor memory device operatively connected to receive address signals, comprising: a plurality of memory cells arranged in a matrix having columns and rows; and decoder means, operatively connected to said plurality of memory cells, for selecting one row of said matrix in response to the address signals, said decoder means comprising: a first-stage decoder having a plurality of first-stage decoding elements having output terminals, said first-stage decoder operatively connected to receive predetermined ones of the address signals; and a second-stage decoder having a plurality of second-stage decoder circuit groups each including a plurality of second-stage decoding elements having output terminals, each of said second-stage decoder circuit groups operatively connected to said corresponding first-stage decoding elements, said second-stage decoder receiving further address signals in addition to said predetermined ones of the address signals connected to said first-stage decoder.
Claim 2
Dependent Claim
138 words
A semiconductor memory device operatively connected to receive address signals, comprising: a plurality of memory cells arranged in a matrix having columns and rows; and decoder means, operatively connected to said plurality of memory cells, for selecting one row of said matrix in response to the address signals, said decoder means comprising: a first-stage decoder having a plurality of first-stage decoding elements having output terminals, said first-stage decoder operatively connected to receive predetermined ones of the address signals; and a second-stage decoder having a plurality of second-stage decoder circuit groups each including a plurality of second-stage decoding elements having output terminals, each of said second-stage decoder circuit groups operatively connected to said corresponding first-stage decoding elements, said second-stage decoder receiving further address signals in addition to said predetermined ones of the address signals connected to said first-stage decoder.
Claim 3
Dependent Claim
88 words
A semiconductor memory device according to claim 1, wherein each of said first-stage decoding elements comprises: a multi-emitter transistor operatively connected to receive said predetermined ones of the address signals at the emitters and having a collector having a collector potential; and a switching element, operatively connected to said multi-emitter transistor and operatively connected to a corresponding one of said second stage decoding elements, turning on when the collector potential of said multi-emitter transistor is high and supplying power to said corresponding one of said second-stage decoding elements.
Claim 4
Dependent Claim
60 words
A semiconductor memory device according to claim 1, wherein each of said first-stage decoding elements comprises: a gate circuit for receiving said predetermined ones of the address signals; and at least one switching element, operatively connected to said gate circuit, turning on when an output of said gate circuit is high and supplying power to said corresponding second-stage decoding elements.
Claim 5
Dependent Claim
35 words
A semiconductor memory device according to claim 3, wherein each of said first stage decoding elements further comprises address inverter transistors, operatively connected to receive the address signals, for pulling the address signals to ground.
Claim 6
Dependent Claim
26 words
A semiconductor memory device according to claim 3 or 2, wherein said at least one switching element in said first stage decoder comprises an npn transistor.
Claim 7
Dependent Claim
17 words
A semiconductor memory device according to claim 3, wherein said gate circuit comprises a plurality of diodes.
Claim 8
Dependent Claim
18 words
A semiconductor memory device according to claim 6, in which said plurality of diodes are Schottky barrier diodes.
Claim 9
Dependent Claim
126 words
A semiconductor memory device according to claim 1, wherein each of said second-stage decoding elements comprises: at least one multi-emitter transistor operatively connected to receive address signals at the emitters, having a collector operatively connected to the output terminal of a corresponding one of said first-stage decoding elements, and at least one second switching element having a trigger terminal operatively connected to the output terminal of said corresponding to one of said first-stage decoding elements, having an output terminal operatively connected to said memory cells, for selecting one of the rows of said memory cells when the output terminal of said corresponding one of said first-stage decoding elements is high and the collector potential of said collector of said at least one multi-emitter transistor is high.
Claim 10
Dependent Claim
126 words
A semiconductor memory device according to claim 1, wherein each of said second-stage decoding elements comprises: at least one second-stage gate circuit having an output, for receiving said predetermined ones of the address signals, the output of said at least one second gate circuit being operatively connected to the output of said at least one of said first-stage decoding elements; and at least one second-stage switching element having a trigger terminal operatively connected to the output terminal of a corresponding one of said first-stage decoding elements, the output of said second switching element selecting one of said rows of said memory cells when the output of said corresponding one of said first-stage decoding elements is high and the output of said second gate circuit is high.
Claim 11
Dependent Claim
18 words
A semiconductor memory device according to claim 9, wherein said second gate circuit comprises a plurality of diodes.
Claim 12
Dependent Claim
17 words
A semiconductor memory device according to claim 10, wherein said plurality of diodes are Schottky barrier diodes.
Claim 13
Dependent Claim
28 words
A semiconductor memory device according to claim 8, 9, 10 or 11, wherein said at least one second switching element in said second-stage decoder comprises an npn transistor.
Claim 14
Dependent Claim
59 words
A semiconductor memory device according to claim 9, wherein each of said second stage decoding elements of said second-stage decoder further comprises a third gate circuit, operatively connected to said first stage decoder, for receiving said further address signals, the output of said third gate circuit being connected to the output of said at least one second gate circuit.
Claim 15
Dependent Claim
136 words
A semiconductor device according to claim 13, wherein each of said second-stage decoding elements comprises: at least one multi-emitter transistor operatively connected to receive address signals at the emitters, having a collector operatively connected to the output terminal of a corresponding one of said first-stage decoding elements; and at least one second switching element having a trigger terminal operatively connected to the output terminal of said corresponding one of said first stage decoding elements and the collector of said at least one multi-emitter transistor, and having an output terminal operatively connected to said memory cells, for selecting one of said rows of said memory cells when the output terminal of said corresponding one of said first-stage decoding elements is high and the collector potential of said collector of said at least one multi-emitter transistor is high.
Claim 16
Dependent Claim
18 words
A semiconductor memory device according to claim 13, wherein said third gate circuit comprises a plurality of diodes.
Claim 17
Dependent Claim
17 words
A semiconductor memory device according to claim 15, wherein said plurality of diodes are Schottky barrier diodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-13 | 1990-04-14 | 1990-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-13 | 1994-04-14 | 1994-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-13 | 1998-04-14 | 1998-10-14 | $7700.00 | Window Closed / Lapsed |