Patent US4617237A successfully refreshed from Google Patents.
US4617237A
Expired / Lapsed
US
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Production of conductive metal silicide films from ultrafine powders
Assignee: Honeywell International Inc
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Filing: 1984-05-14
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Granted: 1986-10-14
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Expires: 2004-05-14
Abstract
Abstract A method of producing a thin film comprising a conductive metal silicide and the products produced therefrom are disclosed. The method is much less complex than methods employed in the prior art for producing conductive thin films and the method reduces substrate damage by maintaining processing temperatures at about 1,000° C. or less. The process employs a stable suspension comprising ultrafine powders in a solvent. This suspension is deposited on a surface of a substrate and is subsequently heated to form a thin conductive film. The thin conductive film comprises polycrystalline metal silicide, preferably a refractory metal silicide, and may also contain silicon. Composites comprising the thin conductive films and a substrate are also disclosed. The process and products are particularly suited for use in VLSI and VVLSI production.
Inventors
- 👤 Arunava Gupta
- 👤 Gary A. West
- 👤 James T. Yardley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:53
CPC Classifications
C; C23; C23C; C23C24/00; C23C24/08; C23C24/082; H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/0132
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
105 words
A process for the production of a conductive film on a substrate comprising the steps of: (a) depositing a suspension comprising powder and a solvent, said powder comprising ultrafine metal silicide powder and free silicon in an amount between about 5 and about 50% by weight of solids, onto a surface of a substrate to produce a layer thereon comprising the ultrafine metal silicide powder and free silicon; and, (b) heating at least the layer comprising the ultrafine metal silicide powder and free silicon for a sufficient time to sinter the layer and to produce a conductive film comprising polycrystalline metal silicide and free silicon.
Claim 2
Dependent Claim
105 words
A process for the production of a conductive film on a substrate comprising the steps of: (a) depositing a suspension comprising powder and a solvent, said powder comprising ultrafine metal silicide powder and free silicon in an amount between about 5 and about 50% by weight of solids, onto a surface of a substrate to produce a layer thereon comprising the ultrafine metal silicide powder and free silicon; and, (b) heating at least the layer comprising the ultrafine metal silicide powder and free silicon for a sufficient time to sinter the layer and to produce a conductive film comprising polycrystalline metal silicide and free silicon.
Claim 3
Dependent Claim
67 words
A process as in claim 1 wherein the ultrafine powders are produced by a process comprising these steps of: (1) supplying gas phase reactants to a reaction chamber, the gas phase reactants comprising a metal-containing compound and a silicon-containing compound; (2) exposing the gases in the reaction chamber to high intensity light; and, (3) regulating steps (1) and (2) to produce ultrafine powders comprising a metal silicide.
Claim 4
Dependent Claim
41 words
A process as in claim 2 wherein the step of regulating the steps (1) and (2) includes regulating the supply of gas phase reactants to the reaction chamber to produce a total reaction chamber pressure of at least about 100 torr.
Claim 5
Dependent Claim
22 words
A process as in claim 2 wherein the high intensity light has an intensity of at least about 10 watts/cm 2 .
Claim 6
Dependent Claim
16 words
A process as in claim 1 wherein the polycrystalline metal silicide has a stoichiometrically unbalanced composition.
Claim 7
Dependent Claim
36 words
A process as in claim 1 wherein at least the layer comprising ultrafine metal silicide powder and free silicon is heated to about 950° C. for at least about 30 minutes to produce the conductive film.
Claim 8
Dependent Claim
14 words
A process as in claim 1 wherein the solvent has a high dielectric constant.
Claim 9
Dependent Claim
21 words
A process as in claim 7 wherein the solvent is selected from the group consisting of C 1 -C 5 alcohols.
Claim 10
Dependent Claim
30 words
A process as in claim 1 wherein the metal silicide powder is selected from the group consisting essentially of titanium silicide, molybdenum silicide, tungsten silicide, tantalum silicide, and mixtures thereof.
Claim 11
Dependent Claim
21 words
A process as in claim 1 wherein the suspension is deposited on the substrate surface by a spraying or spinning process.
Claim 12
Dependent Claim
32 words
A process as in claim 1 wherein at least the layer comprising ultrafine metal silicide powder and free silicon is heated to a temperature equal to or less than about 1,000° C.
Claim 13
Dependent Claim
41 words
A process as in claim 1 wherein at least the layer comprising ultrafine metal silicide powder and free silicon is heated to a sufficient temperature to produce a conductive film having a resistivity equal to or less than about 100 μΩ-cm.
Claim 14
Dependent Claim
23 words
A process as in claim 1 wherein the depositing and heating steps function to produce adherence of the conductive film to the substrate.
Claim 15
Dependent Claim
34 words
A process as in claim 13 wherein the layer of ultrafine powders is heated to about 950° C. for at least about 30 minutes to produce the conductive film on a substrate comprising polysilicon.
Claim 16
Dependent Claim
15 words
A process as in claim 13 wherein the heating step further includes heating the substrate.
Claim 17
Dependent Claim
27 words
A process as in claim 13 wherein the substrate comprises a material selected from the group consisting of alumina, silicon, polysilicon, doped polysilicon, silicon nitride and silica.
Claim 18
Dependent Claim
43 words
A process as in claim 13 wherein the layer of ultrafine metal silicide powder and free silicon is heated to a sufficient temperature for a sufficient time to produce a conductive film having a resistivity equal to or less than about 100 μΩ-cm.
Claim 19
Dependent Claim
44 words
The coated article comprising a substrate and a conductive film, said conductive film comprising polycrystalline metal silicide and free silicon in the range of about 5 to about 50 weight percent of said film and having a resistivity of less than about 100 μΩ-cm.
Claim 20
Dependent Claim
44 words
The coated article comprising a substrate and a conductive film, said conductive film comprising polycrystalline metal silicide and free silicon in the range of about 5 to about 50 weight percent of said film and having a resistivity of less than about 100 μΩ-cm.
Claim 21
Dependent Claim
27 words
The coated article of claim 17 wherein the substrate comprises a material selected from the group consisting of alumina, silicon, polysilicon, doped polysilicon, silicon nitride and silica.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-13 | 1990-04-14 | 1990-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-13 | 1994-04-14 | 1994-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-13 | 1998-04-14 | 1998-10-14 | $7700.00 | Window Closed / Lapsed |