US4616340A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-volatile semiconductor memory
Assignee: Seiko Instruments Inc
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Filing: 1982-09-30
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Granted: 1986-10-07
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Expires: 2002-09-30
Abstract
Abstract In the non-volatile semiconductor memory of present invention, a select gate and a floating gate are formed on the surface portion of the substrate between a source region and the drain region also acting as a control gate through a gate oxide film. A part of a channel current is injected into the floating gate at the surface portion under the edge of the floating gate covered by the select gate.
Inventors
- 👤 Yutaka Hayashi
- 👤 Yoshikazu Kojima
- 👤 Masaaki Kamiya
- 👤 Kojiro Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 03:11
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
338 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate; a source region and drain region disposed in spaced apart isolation from one another adjacent to the surface of said semiconductor substrate; a first gate insulating layer on said drain region; a channel extending between said source region and said drain region, the channel consisting of a first channel region and a second channel region in contact with one another, the second channel region being in contact with the drain region; a second gate insulating layer on said first channel region; a third gate insulating layer on the second channel region; a floating gate electrode on said first and third gate insulating layers; a select gate electrode on said second gate insulating layer; and means operable in a write mode for applying a drain write voltage V DW of one polarity to said drain region and for applying a select gate write voltage V SGW of said one polarity to said select gate electrode in order to write in the memory and operable in a read mode for applying a drain read voltage V DR of said one polarity to said drain region and for applying a select gate read voltage V SGR of said one polarity to said select gate electrode in order to read out the memory by detecting the drain current dependent on electric charges memorized in the floating gate electrode so as to satisfy the following relations: V.sub.SGR ≧V.sub.SGW, and φ.sub.S >φ.sub.C where φ S represents the surface potential of said semiconductor substrate, and φ C represents the barrier energy potential between said semiconductor substrate and said third gate insulating layer in order to accelerate electrons escaping from said source region and inject some of the accelerated escaping electrons into said floating gate electrode at a position where said first and second channel regions make contact with one another, said position being located sufficiently far from the drain region so as to greatly increase the number of accelerated escaping electrons injected into said floating gate.
Claim 2
Dependent Claim
338 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate; a source region and drain region disposed in spaced apart isolation from one another adjacent to the surface of said semiconductor substrate; a first gate insulating layer on said drain region; a channel extending between said source region and said drain region, the channel consisting of a first channel region and a second channel region in contact with one another, the second channel region being in contact with the drain region; a second gate insulating layer on said first channel region; a third gate insulating layer on the second channel region; a floating gate electrode on said first and third gate insulating layers; a select gate electrode on said second gate insulating layer; and means operable in a write mode for applying a drain write voltage V DW of one polarity to said drain region and for applying a select gate write voltage V SGW of said one polarity to said select gate electrode in order to write in the memory and operable in a read mode for applying a drain read voltage V DR of said one polarity to said drain region and for applying a select gate read voltage V SGR of said one polarity to said select gate electrode in order to read out the memory by detecting the drain current dependent on electric charges memorized in the floating gate electrode so as to satisfy the following relations: V.sub.SGR ≧V.sub.SGW, and φ.sub.S >φ.sub.C where φ S represents the surface potential of said semiconductor substrate, and φ C represents the barrier energy potential between said semiconductor substrate and said third gate insulating layer in order to accelerate electrons escaping from said source region and inject some of the accelerated escaping electrons into said floating gate electrode at a position where said first and second channel regions make contact with one another, said position being located sufficiently far from the drain region so as to greatly increase the number of accelerated escaping electrons injected into said floating gate.
Claim 3
Dependent Claim
311 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate; a source region and drain region disposed in spaced apart isolation from one another adjacent to the surface of said semiconductor substrate; a first gate insulating layer on said drain region; a channel extending between said source region and said drain region, the channel consisting of a first channel region and a second channel region in contact with one another, the second channel region being in contact with the drain region; a second gate insulating layer on said first channel region; a third gate insulating layer on said second channel region; a floating gate electrode on said first and third gate insulating layers; a select gate electrode on said second gate insulating layer; and means for applying a drain write voltage V DW of one polarity to said drain region to strongly invert said second channel region and for applying a select gate write voltage V SGW of said one polarity to said select gate electrode to weakly invert said first channel region in comparison to that of said second channel region so as to satisfy the following relations: V.sub.SGW -V.sub.THSG <V.sub.FW -V.sub.THF, φ.sub.C <V.sub.FW -V.sub.THF, and φ.sub.C <V.sub.DW where V THSG represents the threshold voltage of said select gate electrode, V FW represents the floating gate write voltage, V THF represents the threshold voltage of said floating gate electrode, and φ C represents the barrier energy voltage between said semiconductor substrate and said third gate insulating layer in order to accelerate electrons escaping from said source region and inject some of the accelerated escaping electrons into said floating gate electrode at a position where said first and second channel regions make contact with one another, said position being located sufficiently far from the drain region so as to greatly increase the number of accelerated escaping electrons injected into said floating gate.
Claim 4
Dependent Claim
311 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate; a source region and drain region disposed in spaced apart isolation from one another adjacent to the surface of said semiconductor substrate; a first gate insulating layer on said drain region; a channel extending between said source region and said drain region, the channel consisting of a first channel region and a second channel region in contact with one another, the second channel region being in contact with the drain region; a second gate insulating layer on said first channel region; a third gate insulating layer on said second channel region; a floating gate electrode on said first and third gate insulating layers; a select gate electrode on said second gate insulating layer; and means for applying a drain write voltage V DW of one polarity to said drain region to strongly invert said second channel region and for applying a select gate write voltage V SGW of said one polarity to said select gate electrode to weakly invert said first channel region in comparison to that of said second channel region so as to satisfy the following relations: V.sub.SGW -V.sub.THSG <V.sub.FW -V.sub.THF, φ.sub.C <V.sub.FW -V.sub.THF, and φ.sub.C <V.sub.DW where V THSG represents the threshold voltage of said select gate electrode, V FW represents the floating gate write voltage, V THF represents the threshold voltage of said floating gate electrode, and φ C represents the barrier energy voltage between said semiconductor substrate and said third gate insulating layer in order to accelerate electrons escaping from said source region and inject some of the accelerated escaping electrons into said floating gate electrode at a position where said first and second channel regions make contact with one another, said position being located sufficiently far from the drain region so as to greatly increase the number of accelerated escaping electrons injected into said floating gate.
Claim 5
Dependent Claim
53 words
A non-volatile semiconductor memory device as claimed in claim 2, wherein the source region and drain region extend a certain depth into the semiconductor substrate; and the position where the first channel region makes contact with the second channel region is spaced from the drain region a distance greater than said certain depth.
Claim 6
Dependent Claim
68 words
A non-volatile semiconductor memory as claimed in claim 2 or 1, wherein said floating gate electrode overlaps in part with said select gate electrode with an insulator therebetween; and said means for applying includes means operable in an erase mode for applying a voltage of said one polarity to said select gate electrode in order to erase the memory by discharging electric charges from said floating gate electrode.
Claim 7
Dependent Claim
68 words
A non-volatile semiconductor memory as claimed in claim 2 or 1, wherein said floating gate electrode overlaps in part with said source region with a fourth gate insulator therebetween and said means for applying includes means operable in an erase mode for applying a voltage of said one polarity to said source region in order to erase the memory by discharging electric charges from said floating gate electrode.
Claim 8
Dependent Claim
72 words
A non-volatile semiconductor memory as claimed in claim 2 or 1, wherein said floating gate electrode overlaps with a secondary electro-conductive erase region in said semiconductor substrate with a fifth gate insulator therebetween; and said means for applying includes means operable in an erase mode for applying a voltage of said one polarity to said erase region in order to erase the memory by discharging electric charges from said floating gate electrode.
Claim 9
Dependent Claim
28 words
A non-volatile semiconductor memory as claimed in claim 2 or 1, wherein a shield electrode is formed on said floating gate electrode with a sixth gate insulator therebetween.
Claim 10
Dependent Claim
29 words
A non-volatile semiconductor memory as claimed in claim 7, including means for maintaining the voltage of said shield electrode the same as the voltage of said select gate electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-06 | 1990-04-07 | 1990-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-06 | 1994-04-07 | 1994-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-06 | 1998-04-07 | 1998-10-07 | $7700.00 | Window Closed / Lapsed |