US4612257A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrical interconnection for semiconductor integrated circuits
Assignee: Signetics Corp
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Filing: 1984-10-09
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Granted: 1986-09-16
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Expires: 2004-10-09
Abstract
Abstract A structure for an electrical interconnection suitable for a semiconductor integrated circuit is made by a process utilizing selective tungsten deposition at low pressure to form an intermediate conductive layer without significantly ablating nearby insulating material.
Inventors
- 👤 Eliot K. Broadbent
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:01
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12736; Y10T428/12743; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/1284
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
124 words
An electrical interconnection structure of an electrical device in which a first patterned electrically conductive layer lies over a first electrically insulating layer, a second electrically insulating layer lies over the first conductive layer and over adjacent material of the first insulating layer not underlying the first conductive layer, and an aperture extends through the second insulating layer down to a surface portion of the first conductive layer, the improvement comprising: an intermediate electrically conductive layer which consists essentially of tungsten and lies on the surface portion, any tungsten on nearby material of the second insulating layer being electrically inconsequential; and a patterned second electrically conductive layer on material of the second insulating layer and on at least part of the intermediate conductive layer.
Claim 2
Dependent Claim
124 words
An electrical interconnection structure of an electrical device in which a first patterned electrically conductive layer lies over a first electrically insulating layer, a second electrically insulating layer lies over the first conductive layer and over adjacent material of the first insulating layer not underlying the first conductive layer, and an aperture extends through the second insulating layer down to a surface portion of the first conductive layer, the improvement comprising: an intermediate electrically conductive layer which consists essentially of tungsten and lies on the surface portion, any tungsten on nearby material of the second insulating layer being electrically inconsequential; and a patterned second electrically conductive layer on material of the second insulating layer and on at least part of the intermediate conductive layer.
Claim 3
Dependent Claim
52 words
A structure as in claim 1 wherein: the first conductive layer is capable of supporting substantial hydrogen dissociation for a structure temperature in the range of 270° C. to 400° C.; and the second insulating layer is not capable of supporting significant hydrogen dissociation for a structure temperature in the foregoing range.
Claim 4
Dependent Claim
39 words
A structure as in claim 1 wherein the aperture extends down to, but no more than partly into, the first insulating layer, any tungsten on material of the first insulating layer adjacent to the surface portion being electrically inconsequential.
Claim 5
Dependent Claim
50 words
A structure as in claim 3 wherein: the first conductive layer is capable of supporting substantial hydrogen dissociation for a structure temperature in the range of 270° C. to 400° C.; and neither insulating layer is capable of supporting significant hydrogen dissociation for a structure temperature in the foregoing range.
Claim 6
Dependent Claim
33 words
A structure as in claim 1 wherein the first conductive layer substantially consists of aluminum with no more than 4% by weight of copper and no more than 4% by weight of silicon.
Claim 7
Dependent Claim
38 words
A structure as in claim 1 wherein the first conductive layer principally consists of a material in the following group: tungsten, titanium, titanium-tungsten, molybdenum, gold, and a metal silicide wherein the metal is platinum, nickel, nickel-platinum, or palladium.
Claim 8
Dependent Claim
17 words
A structure as in claim 1 wherein the first conductive layer substantially consists of doped polycrystalline silicon.
Claim 9
Dependent Claim
20 words
A structure as in claim 1 wherein the intermediate conductive layer does not extend laterally beyond the second conductive layer.
References Cited (Backward Citations)
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US3826626A
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US3729406A
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JPS52149990A
Cited
JPS5512766A
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JPS5585042A
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JPS5750429A
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US4404235A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-15 | 1990-03-17 | 1990-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-15 | 1994-03-17 | 1994-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-15 | 1998-03-17 | 1998-09-16 | $7700.00 | Window Closed / Lapsed |