High efficiency stable CdS-Cu2 S solar cells manufacturing process using thick film methodology

Claim 2

A process of manufacturing a high-efficiency, stable CdS-Cu 2 S solar cell using a thick film methodology, said process comprising the steps of: A--preparing a CdS slurry from a Cd-doped, CdS powder; B--depositing a 10-15 μ thick layer of the CdS slurry onto a substrate plated with thin layers of Zn and Cd; C--drying the CdS layered substrate and subjecting it to heat treatment; D--pressing the heat-treated substrate; E--subjecting the pressed, CdS layered substrate to another heat treatment to cause CdS recrystallisation and annealing; F--forming a thin, layer of Cu x S wherein the value of x is from 1.996 to 2 onto the surface of the heat-treated, CdS layered substrate under an inert atmosphere to produce a CdS-Cu x S layered assembly; G--subjecting the CdS-Cu x S layered assembly to heat treatment under a H 2 atmosphere in the presence of CaO; H--providing an upper conductor onto the upper surface of the heat treated assembly to complete the desired, stable CdS-Cu 2 S solar cell; and I--encapsulating the obtained cell.

Claim 3

The process of claim 1 comprising the additional step of: heating a given amount of CdS powder mixed with an equal amount of Cd powder under vacuum and, subsequently, under a H 2 atmosphere in the presence of CaO to produce the Cd-doped CdS powder used in step A.

Claim 4

The process of claim 2, wherein the CdS powder is an electrical grade CdS powder and the Cd powder consists of highly pure, microscopic Cd particles obtained by evaporation and deposition of Cd-metal bars.

Claim 5

The process of claim 2, wherein step A is carried out by mixing the doped, CdS powder produced by heating, with α-terpineol.

Claim 6

The process of claim 4, comprising the additional, step of: filtering the doped CdS powder at a desired particle size before mixing it with α-terpineol.

Claim 7

The process of claim 1, wherein the substrate used in step B is made of a metal selected from the group consisting of Cu, Fe and Al.

Claim 8

The process of claim 6, wherein the substrate is electroplated with a 1-2 μ thick layer of Zn in a standard high speed fluoroborate plating bath.

Claim 9

The process of claim 7, wherein the Zn-plated substrate is additionally electro plated with a 1-2 μ thick layer of Cd in a standard high speed fluoroborate plating bath before the CdS slurry is deposited.

Claim 10

The process of claim 8, wherein step B is carried out by screen printing or doctor blading under an inert atmosphere previously filtered against dust particles of more than 0.05 μ.

Claim 11

The process of claim 9, wherein drying in step C is carried out at 150° C. for 3 minutes.

Claim 12

The process of claim 10, wherein the heat treatment of step C is carried out at 400° C. for 5 minutes.

Claim 13

The process of claim 11, wherein the pressing of step D is carried out under a momentary 5-6 ton/cm 2 pressure.

Claim 14

The process of claim 12, wherein the pressing of step D is carried out between two chromium plated, high strength steel plates.

Claim 15

The process of claim 1, wherein the heat treatment of step E is carried out at 300° C. to 700° C. for 1 to 2 hours under inert atmosphere.

Claim 16

The process of claim 14, wherein the heat treatment of step E is carried out in a box furnace under an argon atmosphere in the presence of Cd metal to plate the heat treated substrate with a 0.5-0.10 μ thick layer of Cd.

Claim 17

The process of claim 14, wherein the heat treatment of step E is carried out in a belt furnace and the heat treated substrate is subsequently plated with a 0.5-0.1 μ thick layer of Cd by electroplating carried out in a standard high speed fluoroborate plating bath.

Claim 18

The process of claim 15, wherein the Cd-plated CdS-layered substrate is successively electroplated with a 0.3-0.4 μ thick layer of Zn in a standard high speed fluoroborate plating bath, rinsed dried and heat-treated at about 500 to 700° C. under an inert atmosphere before being used in step F.

Claim 19

The process of claim 16, wherein the CdS-layer substrate is rinsed, dried and heat-treated at 500°-700° C. under an inert atmosphere and, thereafter, successively electroplated with a 0.3-0.4 μ thick layer of Zn in a standard high speed fluoroborate plating bath, rinsed, dried and heat-treated again at about 500° to 700° C. under an inert atmosphere before being used in step F.

Claim 20

The process of claim 1, wherein the production of CdS-Cu x S layered assembly in step F is carried out under a dried atmosphere and the so produced layered assembly are carefully dried before being subjected to the heat-treatment of step G.

Claim 21

The process of claim 19, wherein the heat-treatment of step G is carried out at a temperature lower than 170° C. for less than 24 hours.

Claim 22

The process of claim 20, wherein the heat treatment of step G is carried out at 150°-170° C. for at least one period of 12 hours with presence of previously desiccated CaO in a sufficient amount to absorb the H 2 S formed during the heat-treatment , to retain sulfur in the form of CaS and to trap any moisture present in the cell structure.

Claim 23

The process of claim 1, wherein step H is carried out by screen-printing an array of epoxy metal paste onto the upper surface of the Cu x S layer of the cell.

Claim 24

The process of claim 22, wherein the metal contained in the epoxy metal paste is selected from the group consisting of silver and nickel.

Claim 25

The process of claim 23, wherein the screen-printed cell is dried for about 15 minutes at about 95° C. under a carefully monitored, dry inert atmosphere.

Claim 26

The process of claim 24, comprising the additional step of: subjecting the dried cell to another heat-treat ment under a H 2 atmosphere in the presence of CaO for at least one period of 12 hours.

Claim 27

The process of claim 1, wherein the substrate is in a continuous ribbon form and the process is carried out in a continuous manner.

Claim 28

The process of claim 1, comprising the step of : A--preparing a CdS slurry by mixing α-terpineol with a Cd-doped CdS powder previously obtained by heating a given amount of electrical grade CdS powder mixed with an equal amount of pure, microscopic Cd powder under vacuum and subsequently under a H 2 atmosphere in the presence of CaO; B--depositing a 10-15 μ thick layer of the CdS slurry prepared in step A onto a substrate made from a metal selected from the group of consisting Cu, Fe and Al, said substrate being previously electroplated successively with a 1-2 μ thick layer of Zn and with a 1-2 μ thick layer of Cd; C--drying the CdS layered substrate of step B at 150° C. for 3 minutes and subjecting the so-dried substrated to heat treatment at 400° C. for 5 minutes; D--pressing the heat treated substrate of step C under a momentary 5-6 ton/cm 2 pressure; E--subjecting the pressed, CdS layered substrate to another heat-treatment at 300° C. to 700° C. for 1 to 2 hours under inert atmosphere to cause CdS recrystallisation and annealing, and subsequently applying a 0.5-0.10 μ thick layer of Cd and a 0.3-0.4 μ thick layer of Zn successively onto the surface of the heat-treated substrate; F--forming a thin, layer of Cu x S wherein the value of x is from 1.996 to 2 onto the surface of the heat-treated, CdS layered substrate under an inert atmosphere to produce a CdS-Cu x S layered assembly, and carefully drying the so produced assembly; G--subjecting the CdS-Cu x S layered assembly to heat-treatment at 150°-170° C. for at least one period of 12 hours under a H 2 atmosphere in the presence of previously desiccated CaO in a sufficient amount to absorb the H 2 S formed during the heat treatment, to retain sulfur in the form of CaS and to trap any moisture present in the cell structure; H--providing an upper conductor to the cell by screen-printing an array of epoxy silver or nickel paste onto the upper surface of the Cu 2 S layer of the cell, drying the so printed paste for 15 minutes at about 95° C. under a dry inert atmosphere and subjecting the dried cell to heat treatment under a H 2 atmosphere in the presence of CaO for at least one period of 12 hours; and I--encapsulating the so obtained cell under carefully monitored dry inert atmosphere.

Claim 29

In a process of manufacturing a high-efficiency, stable CdS-Cu 2 S solar cell, said process comprising the steps of depositing a CdS layer onto a substrate and subsequently forming a Cu x S layer wherein the value of x is from 1.996 to 2.00 onto the surface of the CdS-layered substrate to produce the desired solar cell, the improvement comprising the additional step of subjecting the so produced solar cell to heat-treatment at 150°-170° C. under a H 2 atmosphere for at least one period of 12 hours in the presence of previously dessiccated CaO in a sufficient amount to absorb the H 2 S formed during the heat treatment, to retain sulfur in the form of CaS and to trap any moisture present in the cell structure.

Claim 30

In a process of manufacturing a high-efficiency, stable CdS-Cu 2 S solar cell, said process comprising the steps of depositing a CdS layer onto a substrate and subsequently forming a Cu x S layer wherein the value of x is from 1.996 to 2.00 onto the surface of the CdS-layered substrate to produce the desired solar cell, the improvement comprising the additional step of subjecting the so produced solar cell to heat-treatment at 150°-170° C. under a H 2 atmosphere for at least one period of 12 hours in the presence of previously dessiccated CaO in a sufficient amount to absorb the H 2 S formed during the heat treatment, to retain sulfur in the form of CaS and to trap any moisture present in the cell structure.

Claim 31

A high-efficiency stable CdS-Cu 2 S solar cell obtained by the process of claim 27.

Claim 32

A process of manufacturing a high-efficiency stable II-IV class solar cell using a thick film methodology, said process comprising the steps of: A--preparing a slurry of a II-IV class semi-conductor from a II-IV class semi-conductor powder doped to be of low resistivity; B--depositing a 10-15 μ thick layer of the semi-conductor slurry onto a plated substrate; C--drying semi-conductor layered substrate and subjecting it to heat treatment; D--pressing the heat-treated substrate; E--subjecting the pressed, semi-conductor layered substrate to another heat treatment to cause recrystallisation and annealing of the semi-conductor layer; F--forming a thin, layer of another barrier-forming semi-conductor onto the surface of the heat-treated, II-IV class semi-conductor layered substrate under an inert atmosphere to produce a barriered, layered assembly; G--subjecting the layered assembly to heat treatment under a H 2 atmosphere in the presence of CaO; H--providing an upper conductor onto the upper surface of the heat treated assembly to complete the desired, stable solar cell; and I--encapsulating the obtained cell.

Claim 33

A process of manufacturing a high-efficiency stable II-IV class solar cell using a thick film methodology, said process comprising the steps of: A--preparing a slurry of a II-IV class semi-conductor from a II-IV class semi-conductor powder doped to be of low resistivity; B--depositing a 10-15 μ thick layer of the semi-conductor slurry onto a plated substrate; C--drying semi-conductor layered substrate and subjecting it to heat treatment; D--pressing the heat-treated substrate; E--subjecting the pressed, semi-conductor layered substrate to another heat treatment to cause recrystallisation and annealing of the semi-conductor layer; F--forming a thin, layer of another barrier-forming semi-conductor onto the surface of the heat-treated, II-IV class semi-conductor layered substrate under an inert atmosphere to produce a barriered, layered assembly; G--subjecting the layered assembly to heat treatment under a H 2 atmosphere in the presence of CaO; H--providing an upper conductor onto the upper surface of the heat treated assembly to complete the desired, stable solar cell; and I--encapsulating the obtained cell.